RENESAS 2SC5998

2SC5998
Silicon NPN Epitaxial
High Frequency Medium Power Amplifier
REJ03G0169-0100Z
Rev.1.00
Apr.20.2004
Features
• High Transition Frequency
fT = 11 GHz typ.
• High gain and Excellent Efficiency
Maximum Available Gain (MAG) = +22 dB typ. at VCE = 3.6 V, IC= 100 mA, f = 500 MHz
Power Added Efficiency (PAE) = 70% typ. at Pin=+16 dBm, f = 500 MHz
• High Collector to Emitter Voltage
VCEO = 5 V
• Ideal for up to 2GHz applications.
e.g FRS(Family Radio Service) Power Amplifier ,
GMRS (General Mobile Radio Service) Driver Amplifier
Outline
MPAK
3
1
2
Note:
1. Collector
2. Base
3. Emitter
Marking is “YC-”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCEO
VEBO
IC
Pc
Tj
Tstg
13
5
1.5
500
700note
150
–55 to +150
V
V
V
mA
mW
°C
°C
Note: Value on PCB ( FR-4 : 25 x 30 x 1.0mm Double side )
Rev.1.00, Apr.20.2004, page 1 of 10
2SC5998
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
DC current transfer ratio
Collector output capacitance
Reverse Transfer Capacitance
hFE
Cob
Cre
110


150
2.0
0.95
190

1.5

pF
pF
VCE = 3 V, IC = 100 mA
VCB = 3 V, IE = 0, f = 1 MHz
VCB = 3 V, f = 1 MHz,
Emitter grounded
Transition Frequency
Maximum Available Gain
Power Gain
fT
MAG
PG


11
11
22
13



GHz
dB
dB
VCE = 3.6 V, IC = 100 mA, f = 1 GHz
VCE = 3.6 V, IC = 100 mA, f = 0.5 GHz
VCE = 3.6 V, ICq = 20 mA,
f = 0.5 GHz, Pin=+16 dBm
1dB Compression Point at output P1dB
Added Power Efficiency
PAE


28
70


dBm
%
VCE = 3.6 V, ICq = 20 mA, f = 0.5 GHz
VCE = 3.6 V, ICq =20 mA, f = 0.5 GHz
Main Characteristics
Collector Power Dissipation Curve
0.6
0.4
0.2
0
IC (mA)
0.8
Collector Current
Collector Power Dissipation Pc* (W)
*FR – 4(25 x 30 x 1mm)
on PCB
Typical Output Characteristics
500
1.0
4.0 mA
3.5 mA
400
3.0 mA
2.5 mA
300
2.0 mA
1.5 mA
200
1.0 mA
100
IB = 0.5 mA
1
0
50
100
150
200
Ambient Temperature Ta (°C)
4
5
VCE (V)
hFE
200
VCE = 3 V
400
DC Current Transfer Ratio
IC (mA)
500
Collector Current
3
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
300
200
100
0
2
Collector to Emitter Voltage
0.2
0.4
0.6
Base to Emitter Voltage
Rev.1.00, Apr.20.2004, page 2 of 10
0.8
1.0
VBE (V)
150
100
50
VCE = 3 V
0
1
10
100
Collector Current IC (mA)
1000
Collector Output Capacitance vs.
Collector to Base Voltage
Reverse Transfer Capacitance Cre (pF)
Collector Output Capacitance Cob (pF)
2SC5998
4.0
IE = 0
f = 1 MHz
3.0
2.0
1.0
0
4
5
VCB (V)
1
2
3
Collector to Base Voltage
Emitter grounded
f = 1 MHz
1.5
1.0
0.5
1
2
3
Collector to Base Voltage
4
5
VCB (V)
S21 Parameter, Maximum Available Gain,
Maximum Stable Gain vs. Frequency
40
VCE = 3.6 V
IC = 100 mA
12
f = 1 GHz
VCE=3.6V
30
G (dB)
8
6
MSG
20
|S21|2
Gain
Transition Frequency fT (GHz)
2.0
0
Transition Frequency vs.
Collector Current
10
Reverse Transfer Capacitance vs.
Collector to Base Voltage
4
MAG
10
2
0
1
10
100
Collector Current IC (mA)
1000
0
0.1
1
Frequency
Maximum Stable Gain MSG (dB)
Maximum Available Gain MAG (dB)
Maximum Available Gain, Maximum Stable Gain
vs. Collector Current
25
VCE = 3.6 V
f = 0.5GHz
20
1GHz
15
10
2GHz
5
3GHz
0
1
10
Collector Current
Rev.1.00, Apr.20.2004, page 3 of 10
100
IC (mA)
1000
10
f (GHz)
2SC5998
Pin vs. Pout, PG
Pin vs. Pout, PG
40
VCE = 3.6 V
35 Icq = 20 mA
f = 0.5GHz
30
Pout
Pout (dBm), PG(dB)
25
20
15
10
VCE = 4.5 V
35 Icq = 20 mA
f = 0.5GHz
30
25
20
15
10
PG
5
0
0
5
10
15
20
Pin (dBm)
25
0
30
0
5
10
15
20
Pin (dBm)
25
30
Operation Current, Power Added Efficiency
VCE = 3.6 V
Icq = 20 mA
f = 0.5GHz
0.5
100
Ic op
80
0.3
60
PAE
0.2
40
0.1
20
0
PAE(%)
0.4
Operation Current Ic op(A)
0.6
0.6
Operation Current Ic op(A)
PG
5
Operation Current, Power Added Efficiency
VCE = 4.5 V
Icq = 20 mA
0.5
f = 0.5GHz
5
10
15
20
25
100
80
PAE
0.3
60
0.2
40
0.1
20
0
0
0
30
5
10
15
20
25
30
Pin (dBm)
Pin (dBm)
Harmonic Distortion
Harmonic Distortion
40
40
VCE = 3.6 V
Icq = 20 mA
f = 0.5GHz
30
Ic op
0.4
0
0
VCE = 4.5V
Icq = 20 mA
f = 0.5GHz
30
20
Pout (dBm)
20
Pout (dBm)
Pout
2nd HD
Fund
(1tone)
10
2nd HD
10
Fund
(1tone)
0
0
3rd HD
-10
3rd HD
-10
-20
-20
-30
-20
0
10
-10
Pin (dBm)
Rev.1.00, Apr.20.2004, page 4 of 10
20
30
-30
-20
0
10
-10
Pin (dBm)
20
30
PAE(%)
Pout (dBm), PG(dB)
40
2SC5998
Intermodulation Distortion
Intermodulation Distortion
40
40
VCE = 3.6 V
Icq = 20 mA
f = 0.5GHz
∆f=1MHz
Pout (dBm)
20
30
Fund
(1tone)
10
20
IMD3
Pout (dBm)
30
VCE = 4.5 V
Icq = 20 mA
f = 0.5GHz
∆f=1MHz
IMD5
0
IMD3
Fund
(1tone)
10
0
-10
IMD5
-10
-20
-20
-30
-20
0
10
-10
Pin (dBm)
20
30
-30
0
10
-10
Pin (dBm)
-20
20
0.5GHz Evaluation Circuit
VCC
VBB
1µF
1µF
100 pF
100 pF
68 Ω
30 pF
56 nH
10 Ω
20 pF
56 nH
5.1 nH
20 pF
OUT
5.1 nH
IN
10 pF
Rev.1.00, Apr.20.2004, page 5 of 10
1 pF
1 pF
8 pF
30
2SC5998
S parameter
(VCE = 3.6 V, IC = 20 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
0.643
0.635
0.641
0.645
0.651
0.657
0.662
0.667
0.672
0.677
0.682
0.686
0.690
0.696
0.701
0.706
-108.1
-143.5
-158.8
-168.0
-174.7
-180.0
175.5
171.4
167.7
164.2
161.1
158.0
155.1
152.2
149.6
147.0
31.06
18.05
12.26
9.17
7.24
5.96
5.05
4.37
3.85
3.43
3.10
2.83
2.60
2.41
2.24
2.09
121.7
101.3
91.2
84.4
79.3
75.0
71.2
67.9
64.8
61.9
59.1
56.4
53.7
51.2
48.6
46.1
0.0292
0.0371
0.0437
0.0500
0.0560
0.0641
0.0716
0.0795
0.0874
0.0949
0.1024
0.1100
0.1176
0.1251
0.1322
0.1391
48.9
41.8
45.4
48.0
49.6
51.3
52.4
52.6
53.2
52.3
52.0
51.0
50.3
49.2
48.1
47.2
0.630
0.469
0.423
0.409
0.404
0.407
0.410
0.415
0.420
0.426
0.431
0.436
0.442
0.448
0.455
0.462
-81.4
-115.8
-134.7
-147.1
-155.7
-162.6
-168.4
-173.4
-177.7
178.2
174.7
171.2
168.1
165.1
162.2
159.6
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.711
0.716
0.721
0.725
0.731
0.736
0.741
0.745
0.750
0.756
0.760
0.764
0.768
0.773
144.5
142.1
139.7
137.4
135.2
133.0
130.9
128.9
126.9
125.0
123.0
121.1
119.3
117.6
1.97
1.85
1.75
1.66
1.58
1.51
1.44
1.38
1.33
1.28
1.23
1.18
1.14
1.11
43.8
41.4
39.0
36.7
34.5
32.2
30.0
27.8
25.7
23.6
21.5
19.5
17.5
15.6
0.1457
0.1527
0.1592
0.1653
0.1714
0.1771
0.1831
0.1884
0.1940
0.1995
0.2043
0.2083
0.2130
0.2172
45.9
44.7
43.4
41.9
40.6
39.4
38.0
36.5
35.1
34.0
32.5
31.2
29.7
28.2
0.469
0.476
0.483
0.489
0.496
0.504
0.511
0.519
0.526
0.534
0.540
0.548
0.555
0.562
157.1
154.7
152.4
150.1
148.0
145.9
144.0
141.9
140.0
138.1
136.3
134.5
132.8
131.2
Rev.1.00, Apr.20.2004, page 6 of 10
2SC5998
S parameter
(VCE = 3.6 V, IC = 50 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
0.586
0.616
0.629
0.638
0.645
0.650
0.656
0.661
0.665
0.670
0.674
0.678
0.683
0.688
0.693
0.697
-142.9
-163.8
-172.9
-178.7
176.8
172.8
169.3
165.9
162.8
159.8
157.0
154.2
151.7
149.1
146.6
144.2
38.37
20.35
13.52
10.03
7.89
6.48
5.48
4.75
4.18
3.73
3.38
3.08
2.83
2.62
2.44
2.28
109.9
94.5
86.7
81.3
77.1
73.6
70.4
67.5
64.8
62.2
59.7
57.2
54.8
52.4
50.0
47.7
0.0190
0.0276
0.0355
0.0448
0.0532
0.0628
0.0717
0.0808
0.0904
0.0989
0.1075
0.1162
0.1247
0.1326
0.1403
0.1478
53.1
57.6
61.5
62.6
63.9
63.6
63.0
62.2
61.7
59.9
58.4
56.9
55.5
53.9
52.4
50.9
0.525
0.450
0.441
0.445
0.449
0.457
0.463
0.469
0.475
0.481
0.487
0.492
0.498
0.504
0.510
0.516
-110.1
-140.8
-154.9
-163.4
-169.9
-174.8
-179.2
176.8
173.5
170.0
167.0
164.1
161.4
158.7
156.2
153.8
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.702
0.707
0.712
0.716
0.722
0.727
0.731
0.736
0.741
0.746
0.751
0.754
0.758
0.763
141.9
139.6
137.4
135.2
133.1
131.1
129.1
127.1
125.2
123.4
121.5
119.7
117.9
116.3
2.14
2.02
1.91
1.81
1.73
1.65
1.57
1.51
1.45
1.39
1.34
1.29
1.25
1.21
45.5
43.2
41.0
38.8
36.7
34.5
32.5
30.3
28.3
26.3
24.3
22.3
20.5
18.6
0.1550
0.1625
0.1690
0.1756
0.1819
0.1879
0.1941
0.1994
0.2054
0.2108
0.2152
0.2200
0.2244
0.2286
49.2
47.5
46.0
44.3
42.5
41.1
39.4
37.7
36.3
34.7
33.2
31.6
30.2
28.5
0.523
0.529
0.535
0.541
0.548
0.555
0.561
0.567
0.574
0.580
0.586
0.593
0.600
0.606
151.5
149.3
147.2
145.1
143.0
141.1
139.2
137.3
135.3
133.6
131.8
130.2
128.5
126.9
Rev.1.00, Apr.20.2004, page 7 of 10
2SC5998
S parameter
(VCE = 3.6 V, IC = 100 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
0.587
0.618
0.631
0.640
0.647
0.652
0.657
0.662
0.666
0.671
0.675
0.678
0.683
0.687
0.692
0.696
-158.5
-171.9
-178.0
177.3
173.4
170.0
166.8
163.7
160.8
158.0
155.4
152.7
150.2
147.8
145.4
143.1
40.54
20.95
13.81
10.20
8.02
6.58
5.58
4.84
4.27
3.81
3.45
3.15
2.90
2.69
2.50
2.34
105.4
91.8
85.0
80.2
76.5
73.3
70.4
67.7
65.2
62.8
60.3
58.0
55.6
53.3
50.9
48.7
0.0155
0.0245
0.0342
0.0433
0.0532
0.0630
0.0728
0.0829
0.0924
0.1009
0.1097
0.1187
0.1273
0.1354
0.1434
0.1513
56.9
66.6
69.1
70.4
69.5
68.0
66.8
65.5
64.2
62.6
60.7
58.9
57.3
55.4
53.6
52.1
0.499
0.459
0.460
0.467
0.473
0.481
0.487
0.493
0.498
0.504
0.510
0.515
0.520
0.526
0.531
0.538
-123.7
-150.4
-161.9
-169.2
-174.7
-179.2
177.0
173.3
170.3
167.1
164.3
161.5
159.0
156.5
154.0
151.7
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.701
0.706
0.711
0.715
0.721
0.725
0.730
0.734
0.739
0.744
0.749
0.753
0.757
0.761
140.8
138.6
136.4
134.3
132.2
130.2
128.2
126.3
124.4
122.6
120.8
119.0
117.2
115.5
2.20
2.08
1.97
1.87
1.78
1.69
1.62
1.55
1.49
1.43
1.38
1.33
1.28
1.24
46.5
44.3
42.1
39.9
37.8
35.7
33.6
31.5
29.5
27.5
25.6
23.6
21.8
19.9
0.1586
0.1658
0.1733
0.1799
0.1860
0.1917
0.1981
0.2038
0.2099
0.2151
0.2198
0.2242
0.2290
0.2326
50.2
48.6
46.8
45.1
43.3
41.7
40.1
38.3
36.7
35.1
33.4
31.9
30.3
28.7
0.543
0.549
0.555
0.561
0.567
0.574
0.580
0.586
0.592
0.599
0.605
0.611
0.617
0.623
149.5
147.4
145.3
143.3
141.3
139.4
137.5
135.6
133.8
132.0
130.3
128.7
127.0
125.4
Rev.1.00, Apr.20.2004, page 8 of 10
2SC5998
S parameter
(VCE = 3.6 V, IC = 200 mA, Zo = 50 Ω )
S11
S21
S12
S22
f (MHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
0.607
0.631
0.646
0.654
0.660
0.664
0.668
0.672
0.676
0.680
0.684
0.687
0.691
0.695
0.700
0.704
-166.7
-176.2
178.9
175.0
171.4
168.2
165.1
162.2
159.4
156.7
154.2
151.6
149.2
146.7
144.4
142.1
39.88
20.31
13.30
9.81
7.72
6.35
5.40
4.70
4.15
3.72
3.37
3.09
2.84
2.64
2.46
2.30
103.2
90.5
84.3
80.0
76.6
73.7
70.9
68.4
65.9
63.5
61.1
58.6
56.3
53.9
51.6
49.3
0.0111
0.0231
0.0332
0.0443
0.0536
0.0633
0.0737
0.0836
0.0934
0.1022
0.1111
0.1201
0.1292
0.1372
0.1452
0.1529
80.5
72.6
72.3
72.9
72.5
70.8
69.1
67.3
65.5
63.6
61.8
60.1
58.2
56.2
54.4
52.7
0.492
0.471
0.474
0.482
0.488
0.493
0.499
0.504
0.508
0.514
0.518
0.522
0.527
0.532
0.539
0.544
-131.3
-155.0
-165.6
-172.3
-177.5
178.3
174.6
171.2
168.2
165.2
162.5
159.9
157.5
155.1
152.8
150.5
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
0.708
0.713
0.718
0.722
0.728
0.732
0.736
0.740
0.745
0.750
0.755
0.758
0.762
0.767
139.9
137.7
135.5
133.5
131.4
129.4
127.5
125.6
123.7
121.9
120.1
118.3
116.5
114.9
2.17
2.05
1.94
1.84
1.75
1.67
1.60
1.53
1.47
1.42
1.36
1.32
1.27
1.23
47.0
44.8
42.6
40.4
38.3
36.1
34.1
31.9
29.9
27.9
26.0
24.0
22.2
20.3
0.1599
0.1679
0.1748
0.1815
0.1880
0.1941
0.2001
0.2059
0.2117
0.2166
0.2217
0.2262
0.2314
0.2348
50.9
49.1
47.4
45.4
43.8
42.0
40.3
38.6
37.0
35.4
33.7
32.1
30.5
28.9
0.549
0.555
0.561
0.567
0.573
0.580
0.586
0.592
0.598
0.605
0.609
0.616
0.622
0.628
148.3
146.2
144.2
142.3
140.3
138.4
136.6
134.7
132.9
131.2
129.4
127.8
126.1
124.5
Rev.1.00, Apr.20.2004, page 9 of 10
2SC5998
Package Dimensions
As of January, 2003
0.65
Unit: mm
0.95
0.95
1.9 ± 0.2
+ 0.10
0 – 0.1
2.8
+ 0.2
– 0.6
0.16 – 0.06
0.65
1.5 ± 0.15
0.10
0.4 +– 0.05
+ 0.2
1.1 – 0.1
0.3
2.95 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
MPAK(T)
—
Conforms
0.011 g
Ordering Information
Part Name
Quantity
Shipping Container
2SC5998YC
3000
φ178 taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state
of production before ordering the product.
Rev.1.00, Apr.20.2004, page 10 of 10
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
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