Schottky barrier diode RB050L-60 zDimensions (Unit : mm) zApplications General rectification zLand size figure (Unit : mm) 2.0 ① ② 4.2 0.1±0.02 0.1 5.0±0.3 3 1.2±0.3 4 4.5±0.2 zFeatures 1)Small power mold type. (PMDS) 2)Low IR 2.0 2.6±0.2 PMDS 3)High reliability 2.0±0.2 1.5±0.2 zStructure ROHM : PMDS JEDEC : SOD-106 2 c Manufacture Date zConstruction Silicon epitaxial planar zTaping specifications (Unit : mm) 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 5.3±0.1 0.05 9.5±0.1 1.75±0.1 4.0±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 60 VR Reverse voltage (DC) 60 Average rectified forward current (*1) 3 Io Average rectified forward current (*2) 2 Io IFSM Forward current surge peak (60Hz・1cyc) 70 Junction temperature 150 Tj Storage temperature -40to+150 Tstg (*1) On the Glass epoxy substrate, half sine wave at 180°Tc=69°C MAX (*2) On the Glass epoxy substrate, half sine wave at 180° zElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. Unit V V A A A °C °C Min. Typ. Max. Unit VF1 - - 0.52 V VF2 - - 0.56 V IR - - 100 µA 1/3 Conditions IF=2.0A IF=3.0A VR=60V 2009.06- Rev.A RB050L-60 10000 Ta=25° C 1000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF (A) 1 Ta=125° C Ta=-25° C 0.1 0.01 f =1MHz Ta=125° C 1000 Ta=75° C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Data Sheet 100 Ta=75° C 10 Ta=25° C 1 0.1 0.01 Ta=-25° C 100 10 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 1 60 0 FORWARD VOLTAGE：VF (V) VF-I F CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-I R CHARACTERISTICS 90 0.5 0.49 0.48 0.47 AVE:0.4884V 80 70 60 AVE：25.93μA 50 40 30 20 0.46 600 590 580 570 0 550 AVE:597.5pF Ct DISPERSION MAP 200 AVE:207.4A 150 1cyc 8.3ms 300 Ta=25° C IF=0.1A IR =0.1A Irr=0.1IR n=20pcs 40 30 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 50 610 560 50 Ifsm 620 I R DISPERSION MAP 300 100 630 10 VF DISPERSION MAP Ta=25° C f=1MHz V R=0V n=20pcs 640 Ta=25° C V R =60V n=50pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.51 20 AVE：25.6ns 10 0 Ifsm 250 8.3ms8.3ms 200 1cyc 150 100 50 0 0 1 I FSM DISRESION MAP trr DISPERSION MAP 10 Ifsm t Rth(j-a) 100 Rth(j-c) 10 IM=100mA IF=100mA 1 100 TIME:t(ms) I FSM-t CHARACTERISTICS www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 0.1 0.001 D=1/2 DC 3 Sin(θ＝180) 2 time 300us 10 4 1 1ms 1 1 100 Mounted on epoxy board FORWARD POWER DISSIPATION:Pf(W) 100 10 NUMBER OF CY CLES I FSM-CY CLE CHARACTERISTICS 5 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 30 650 100 Ta=25° C I F =3A n=50pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 0.52 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 2/3 0 1000 0 1 2 3 4 5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2009.06 - Rev.A RB050L-60 0.6 5.0 7 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 0.3 D=1/2 0.2 DC 0.1 Sin(θ＝180) 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0V VR t 3.5 T 3.0 D=t/T VR=30V Tj=150° C 2.5 2.0 1.5 Sin(θ＝180) 1.0 0.5 0 Io 0A DC 4.0 0A Io 0V VR 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4.5 0.5 REVERSE POWER DISSIPATION:PR (W) Data Sheet t DC T 5 4 D=t/T VR=30V Tj=150° C D=1/2 3 2 Sin(θ＝180) 1 D=1/2 0 0.0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(° C) Derating Curv e'(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(° C) Derating Curv e'(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 AVE:13.02kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. 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