2N4123 & 2N4124 Silicon NPN Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V 2N4124 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector−Base Voltage, VCBO 2N4123 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 2N4124 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/5C Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 30 − − V 25 − − V 40 − − V 30 − − V 5 − − V OFF Characteristics Collector−Emitter Breakdown Voltage 2N4123 V(BR)CEO IC = 1mA, IE = 0, Note 1 2N4124 Collector−Base Breakdown Voltage 2N4123 V(BR)CBO IC = 105 A, IE = 0 2N4124 Emitter−Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current V(BR)EBO IE = 105 A, IC = 0 ICBO VCB = 30V, IE = 0 − − 50 nA IBL VBE = 3V, IC = 0 − − 50 nA VCE = 1V, IC = 2mA 50 − 150 120 − 360 25 − − 60 − − ON Characteristics (Note 1) DC Current Gain 2N4123 hFE 2N4124 2N4123 VCE = 1V, IC = 50mA 2N4124 Note 1. Pulse Test: Pulse Width = 3005 s, Duty Cycle = 2%. Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Cont’d) (Note 1) Collector−Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5mA − − 0.3 V Base−Emitter Saturation Voltage VBE(sat) IC = 50mA, IB = 5mA − − 0.95 V 250 − − MHz 300 − − MHz Small−Signal Characteristics Current Gain−Bandwidth Product 2N4123 fT IC = 10mA, VCE = 20V, f = 100MHz 2N4124 Output Capacitance Cobo VCB = 5V, IE = 0, f = 100MHz − − 4.0 pF Input Capacitance Cibo VBE = 0.5V, IC = 0, f = 100kHz − − 8.0 pF Collector−Base Capacitance Ccb IE = 0, VCB = 5V, f = 100kHz − − 4.0 pF Small−Signal Current Gain 2N4123 hfe IC = 2mA, VCE = 10V, f = 1kHz 50 2N4124 Current Gain − High Frequency 2N4123 |hfe| IC = 10mA, VCE = 20V, f = 100Hz 2N4124 2N4123 IC = 2mA, VCE = 10V, f = 1kHz 2N4124 Noise Figure 2N4123 NF IC = 1005 A, VCE = 5V, RS = 1k3 , Noise Bandwidth = 10Hz to 15.7kHz 2N4124 Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%. − 200 120 − 480 2.5 − − − 3.0 − − − 50 − 200 − 120 − 480 − − − 6.0 db − − 5.0 db .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max