2SB1708 Transistors Low frequency amplifier 2SB1708 !External dimensions (Units : mm) !Application Low frequency amplifier Driver 0.4 2.9 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 0 0.1 0.7 0.16 (2) !Features 1) A collector current is large. (3A) 2) VCE(sat) ≤ −250mV At IC = −1.5A / IB = −30mA 0.95 0.95 2.8 1.6 Each lead has same dimensions Abbreviated symbol : YY ROHM : TSMT3 !Packaging specifications !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg (1) Base (2) Emitter (3) Collector Limits −30 −30 −6 −3 −6 500 150 −55~+150 Unit V V V A A∗ mW °C °C Package Type Taping Code T146 Basic ordering unit (pieces) 3000 2SB1708 ∗Single pulse, PW=1ms !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −30 −30 −6 − − − 270 − − Typ. − − − − − −180 − 200 40 Max. − − − −100 −100 −250 680 − − Unit V V V nA nA mV − MHz pF Conditions IC=−10µA IC=−1mA IE=−10µA VCB=−30V VEB=−6V IC=−1.5A, IB=−30mA VCE=−2V, IC=−200mA ∗ VCE=−2V, IE=200mA, f=100MHz ∗ VCB=−10V, IE=0A, f=1MHz ∗ Pulsed 1/2 2SB1708 Transistors VCE=−2V Pulsed 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.1 DC Current Gain vs. Collector Current COLLECTOR CURRENT : IC (A) 10 1 Ta=125°C Ta=25°C Ta=−40°C 0.01 0.001 0.1 1 0.01 0.001 0.001 0.01 0.1 1 10 10 BASE TO EMITTER CURRENT : VBE (V) Fig.4 Grounded Emitter Propagation Characteristics IC/IB=20/1 Pulsed Ta=−40°C Ta=25°C Ta=125°C 1 0.1 0.001 0.1 1 Cib Cob 10 Ta=25°C IC=0A f=1MHz 1 0.001 0.01 0.1 1 10 10 Fig.3 Base-emitter saturation voltage vs. Collector Current 1000 1000 100 0.01 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter Saturation Voltage vs. Collector Current VCE=−2V Pulsed 0.1 Ta=125°C Ta=25°C Ta=−40°C 0.1 TRANSITION FREQUENCY : fT (MHz) 100 10 IC/IB=20/1 Pulsed BASE SATURATION VOLTAGE : VBE (sat) (V) Ta=125°C Ta=25°C Ta=−40°C 1 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) DC CURRENT GAIN : hFE 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) !Electrical characteristic curves 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.5 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Ta=25°C VCE=−2V f=100MHz 100 10 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.6 Gain Bandwidth Product vs. Emitter Current SWITCHING TIME : (ns) 10000 Ta=25°C VCE=−12V IC/IB=20/1 Pulsed 1000 tstg 100 10 0.01 0.1 1 tf tdon tr 10 COLLECTOR CURRENT : IC (A) Fig.7 Switching Time 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0