2N3904 Silicon NPN Transistor General Purpose TO−92 Type

2N3904
Silicon NPN Transistor
General Purpose
TO−92 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 1
40
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
60
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
6
−
−
V
Collector Cutoff Current
Base Cutoff Current
ICEX
VCE = 30V, VEB = 3V
−
−
50
nA
IBL
VCE = 30V, VEB = 3V
−
−
50
nA
hFE
VCE = 1V, IC = 0.1mA
40
−
−
VCE = 1V, IC = 1mA
70
−
−
VCE = 1V, IC = 10mA
100
−
300
VCE = 1V, IC = 50mA
60
−
−
VCE = 1V, IC = 100mA
30
−
−
ON Characteristics (Note 1)
DC Current Gain
Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 10mA, IB = 1mA
−
−
0.2
V
IC = 50mA, IB = 5mA
−
−
0.3
V
IC = 10mA, IB = 1mA
0.65
−
0.85
V
IC = 50mA, IB = 5mA
−
−
0.95
V
300
−
−
MHz
ON Characteristics (Cont’d) (Note 1)
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Small−Signal Characteristics
Current Gain−Bandwidth Product
fT
IC = 10mA, VCE = 20V, f = 100MHz
Output Capacitance
Cobo
VCB = 5V, IE = 0, f = 1MHz
−
−
4.0
pF
Input Capacitance
Cibo
VCB = 0.5V, IC = 0, f = 1MHz
−
−
8.0
pF
Input Impedance
hie
IC = 1mA, VCE = 10V, f = 1kHz
1.0
−
10
k
Voltage Feedback Ratio
hre
IC = 1mA, VCE = 10V, f = 1kHz
0.5
−
8.0
x 10−4
Small−Signal Current Gain
hfe
IC = 1mA, VCE = 10V, f = 1kHz
100
−
400
Output Admittance
hoe
IC = 1mA, VCE = 10V, f = 1kHz
1.0
−
30
mhos
Noise Figure
NF
IC = 100A, VCE = 5V, RS = 1k,
f = 10Hz to 15.7kHz
−
−
5.0
db
Delay Time
td
−
−
35
ns
Rise Time
tr
VCC = 3V, VEB = 0.5V, IC = 10mA,
IB1 = 1mA
−
−
35
ns
Storage Time
ts
−
−
200
ns
Fall Time
tf
VCC = 3V, IC = 10mA,
IB1 = IB2 = 1mA
−
−
50
ns
Switching Characteristics
Note 1. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max