MJ10023 Silicon NPN Transistor Power Darlington w/Base−Emitter

MJ10023
Silicon NPN Transistor
Power Darlington w/Base−Emitter Speed−up Diode
Description:
The MJ10023 is a silicon NPN Darlington transistor in a TO3 type package designed for high−voltage,
high−speed, power switching in inductive circuits where fall time is critical. This device is particularly
suited for line−operated switchmode applications.
Applications:
D Switching Regulators
D AC and DC Motor Controls
D Inverters
D Solenoid and Relay Drivers
Features:
D Continuous Collector Current: IC = 40A
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Power Dissipation, PD
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
400
−
−
V
−
−
0.25
mA
TC = +150C
−
−
5.0
mA
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
VCEO(sus) IC = 100mA, IB = 0
ICEV
VCEV = 600V,
VBE(off) = 1.5V
Collector Cutoff Current
ICER
VCEV = 600V, RBE = 50, TC = +100C
−
−
5.0
mA
Emitter Cutoff Current
IEBO
VBE = 2V, IC = 0
−
−
175
mA
hFE
IC = 10A, VCE = 5V
60
−
600
IC = 20A, IB = 1A
−
−
2.2
V
−
−
2.5
V
IC = 40A, IB = 5A
−
−
5.0
V
IC = 20A, IB = 1.2A
−
−
2.5
V
−
−
2.5
V
−
−
5.0
V
150
−
600
pF
−
−
0.2
s
−
−
1.5
s
−
−
2.5
s
−
−
1.1
s
ON Characteristics (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
VCE(sat)
TC = +100C
Base−Emitter Saturation Voltage
VBE(sat)
TC = +100C
Diode Forward Voltage
Vf
IF = 20A
Dynamic Characteristic
Output Capacitance
Cob
VCB = 10V, IE = 0, ftest = 1kHz
Switching Characteristics
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
VCC = 250V, IC = 20A, IB1 = 1A,
VBE(off) = 5V, tp = 50s,
Duty Cycle  2%
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.
Circuit Outline
C
B
[ 100
[ 15
E
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.040 (1.02)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case