2N4402 & 2N4403 Silicon PNP Transistor General Purpose TO92 Type Package Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/5C Total Device Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 40 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 40 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 5 − − V Collector Cutoff Current ICEX VCE = 35V, VEB = 0.4V − − 0.1 5A Base Cutoff Current IBEV VCE = 35V, VEB = 0.4V − − 0.1 5A VCE = 1V, IC = 0.1mA 30 − − VCE = 1V, IC = 1mA 30 − − 60 − − 50 − − 100 − − 50 − 150 100 − 300 20 − − 20 − − ON Characteristics (Note 1) DC Current Gain 2N4403 2N4402 hFE 2N4403 2N4402 VCE = 1V, IC = 10mA 2N4403 2N4402 VCE = 2V, IC = 150mA 2N4403 2N4402 VCE = 2V, IC = 500mA 2N4403 Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%. Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 150mA, IB = 15mA − − 0.4 V IC = 500mA, IB = 50mA − − 0.75 V IC = 150mA, IB = 15mA 0.75 − 0.95 V IC = 500mA, IB = 50mA − − 1.3 V 150 − − MHz 200 − − MHz ON Characteristics (Cont’d) (Note 1) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Small−Signal Characteristics Current Gain−Bandwidth Product 2N4402 fT IC = 20mA, VCE = 10V, f = 100MHz 2N4403 Collector−Base Capacitance Ccb VCB = 10V, IE = 0, f = 140kHz − − 8.5 pF Emitter−Base Capacitance Ceb VBE = 0.5V, IC = 0, f = 140kHz − − 30 pF Input Impedance 2N4402 hie IC = 1mA, VCE = 10V, f = 1kHz 750 − 7.5k 3 1.5k − 15k 3 IC = 1mA, VCE = 10V, f = 1kHz 0.1 − 8.0 x 10−4 IC = 1mA, VCE = 10V, f = 1kHz 30 2N4403 Voltage Feedback Ratio hre Small−Signal Current Gain 2N4402 hfe 2N4403 Output Admittance hoe − 250 60 − 500 1.0 − 100 5 mhos VCC = 30V, VEB = 2V, IC = 150mA, IB1 = 15mA − − 15 ns − − 20 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA − − 225 ns − − 30 ns IC = 1mA, VCE = 10V, f = 1kHz Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max