2N2907A Silicon PNP Transistor Small Signal Switching TO−18

2N2907A
Silicon PNP Transistor
Small Signal Switching
TO−18 Type Package
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation, PD
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150C/W
Note 1. Stresses above those listed in Absolute Maximum Ratings may damage the device. If any
of these limits are exceeded, device functionality should not be assumed, damaged may
occur and reliability may be affected.
Electrical Characteristics: (TA = 25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
60
−
−
V
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA
Collector−Emitter Cutoff Current
ICES
VCE = 50V
−
−
50
nA
Collector−Base Cutoff Current
ICBO
VCB = 50V, IE = 0
−
−
10
nA
VCB = 60V, IE = 0
−
−
10
A
VEB = 4V
−
−
50
nA
VEB = 5V
−
−
10
A
VCE = 10V IC = 0.1mA
75
−
−
IC = 1mA
100
−
450
IC = 10mA
100
−
−
IC = 150mA
100
−
300
IC = 500mA
50
−
−
IC = 150mA, IB = 15mA
−
−
0.4
V
IC = 500mA, IB = 50mA
−
−
1.6
V
IC = 150mA, IB = 15mA
0.6
−
1.3
V
IC = 500mA, IB = 50mA
−
−
2.6
V
Emitter−Base Cutoff Current
IEBO
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
hFE
VCE(sat)
VBE(sat)
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.
Electrical Characteristics (Cont’d): (TA = 25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Small−Signal Characteristics
Magnitude of Small Signal Current Gain
|hfe|
IC = 20mA, VCE = 20V, f = 100MHz
2.0
−
−
Small−Signal Current Gain
hfe
IC = 1mA, VCE = 10V, f = 1kHz
100
−
−
Output Capacitance
Cobo
VCB = 10V, IE = 0, 100kHz  f  1MHz
−
−
8
pF
Input Capacitance
Cibo
VEB = 2V, IC = 0, 100kHz  f  1MHz
−
−
30
pF
Switching Characteristics
Turn−On Time
ton
−
−
45
ns
Turn−Off Time
toff
−
−
300
ns
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.
.230 (5.84) Dia Max
.195 (4.95) Dia Max
.210 (5.33)
Max
.030 (.762) Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector
45
.041 (1.05)