2N6059 Silicon NPN Power Darlington Transistor TO−3 Type Case

2N6059
Silicon NPN Power Darlington Transistor
TO−3 Type Case
Description:
The 2N6059 is a silicon NPN Darlington transistor in a TO−3 type case designed for general−purpose
amplifier and low−frequency switching applications.
Absolute Maximum Ratings:
Collector−Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Emitter Voltage (VBE = −1.5V), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Dissipation (TC  25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Max. Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Max. Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
ICEX
Test Conditions
VCE = 100V, VBE = −1.5V
TC = +150C
Emitter Cutoff Current
Collector−Emitter Sustaining Voltage
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
Transition Frequency
Min
Typ
Max Unit
−
−
0.5
mA
−
−
5.0
mA
ICEO
VCE = 50V, IB = 0
−
−
1
mA
IEBO
VBE = 5V, IC = 0
−
−
2.0
mA
100
−
−
V
IC = 6A, IB = 24mA, Note 1
−
−
2
V
IC = 12A, IB = 120mA, Note 1
−
−
3
V
IC = 6A, VCE = 3V, Note 1
−
−
2.8
V
IC = 6A
750
−
−
IC = 12A
100
−
−
4
−
−
VCEO(sus) IC = 100mA, Note 1
VCE(sat)
VBE(sat)
hFE
fT
VCE = 3V, Note 1
IC = 5A, VCE = 3C, f = 1MHz
Note 1. Pulse Test: Pulse Width = 300s, Duty Cycle = 1.5%
MHz
C
B
E
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating Plane
.312 (7.93) Min
.040 (1.02)
1.187 (30.16)
Emitter
.665(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case