2N3054 Silicon NPN Transistors Medium Power General Purpose Switch TO66 Type Package Description: The 2N3054 is a silicon NPN transistor in a TO66 type package designed for general purpose switching and amplifier applications Features: D Excellent Safe Operating Area D DC Current Gain Specified to 3.0 Amps Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Collector−Emitter Voltage (RBE = 1005 ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Derate above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.143W/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655 to +2005C Thermal Resistance, Junction to Case, R3 JC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 55 − − V 60 − − V OFF Characteristics Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1 VCER(sus) IC = 100mA, RBE = 1005 , Note 1 Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 30V, IB = 0 − − 5 A ICEX VCE = 90V, VBE(off) = 1.5V − − 1.0 mA VCE = 90V, VBE(off) = 1.5V, TC = +1505C − − 6.0 mA VEB = 7V, IC = 0 − − 1.0 mA IEBO Note 1. Pulse Test: Pulse Width 3 300 s, Duty Cycle 3 2%. Electrical Characteristics (Cont’d): (TC = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 0.5A, VCE = 4V 25 − 150 IC = 3.0A, VCE = 4V 5.0 − − IC = 500mA, IB = 50mA − − 1.0 V IC = 3.0A, IB = 1.0A − − 6.0 V VBE(on) IC = 500mA, VCE = 4V − − 1.7 V Current Gain −Bandwidth Product fT IC = 200mA, VCE = 10V 3.0 − − MHz Small−Signal Current Gain hfe IC = 100mA, VCE = 4V, f = 1kHz 25 − 180 Common−Emitter Cutoff frequency fhfe IC = 100mA, VCE = 4V 30 − − ON Characteristics (Note 1) DC Current Gain hFE Collector−Emitter Saturation Voltage Base−Emitter ON Voltage VCE(sat) Dynamic Characteristics Note 1. Pulse Test: Pulse Width 3 300 s, Duty Cycle 3 2%. .295 (7.5) .485 (12.3) Dia .062 (1.57) .031 (0.78) Dia .960 (24.3) .360 (9.14) Min Base .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Collector/Case Emitter