NTE2379 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type package Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements D G S Absolute Maximum Ratings: Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V Drain Current, ID Continuous (VGS = 10V) TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1.5A Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mJ Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V/ns Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/5C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . +3005C Thermal Resistance: Maximum Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.05C/W Typical Case−to−Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.55C/W Maximum Junction−to−Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 625C/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. VDD = 50V, starting TJ = +255C, l = 27mH, RG = 25+ , IAS = 6.2A. Note 3. ISD 3 6.2A, di/dt 3 80A/.A, VDD 3 V(BR)DSS, TJ 3 +1505C. Rev. 10−13 Electrical Characteristics: (TJ = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Drain−Source Breakdown Voltage BVDSS VGS = 0V, ID = 250.A 600 − − V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250.A 2.0 − 4.0 V Gate−Source Leakage Forward IGSS VGS = 20V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −20V − − −100 nA Drain−Source Leakage Current IDSS VDS = 600V, VGS = 0 − − 100 .A VDS = 480V, VGS = 0, TC = +1505C − − 500 .A RDS(on) VGS = 10V, ID = 3.7A, Note 4 − − 1.2 + Forward Transconductance gfs VDS . 100V, ID = 3.7A, Note 4 4.7 − − mhos Input Capacitance Ciss VGS = 0V, VDS = 25V, f = 1MHz − 1300 − pF Output Capacitance Coss − 160 − pF Reverse Transfer Capacitance Crss − 30 − pF Turn−On Delay Time td(on) − 32 − ns − 18 − ns td(off) − 55 − ns tf − 20 − ns − − 60 nC Static Drain−Source ON Resistance Rise Time Turn−Off Delay Time Fall Time tr VDD = 300V, ID = 6.2A, RG = 9.1+ , RD = 47+ , Note 4 Total Gate Charge Qg Gate−Source Charge Qgs − − 8.3 nC Gate−Drain (“Miller”) Charge Qgd − − 30 nC Internal Drain Inductance LD − 4.5 − nH Internal Source Inductance LS − 7.5 − nH (Body Diode) − − 6.2 A VGS = 10V, ID = 6.2A, VDS = 360V Between lead, 6mm (.250 in) from package and center of die contact Source−Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 − − 25 A Diode Forward Voltage VSD TJ = +255C, IS = 6.2A, VGS = 0V, Note 4 − − 1.5 V Reverse Recovery Time trr − 450 940 ns Reverse Recovery Charge Qrr TJ = +255C, IF = 6.2A, di/dt = 100A/.s, Note 4 − 3.8 7.9 .C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS + LD) Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 3 300.s, Duty Cycle 3 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Gate .100 (2.54) .500 (12.7) Min Source Drain/Tab