NTE123AP Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159) Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/W Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 40 − − V Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0 60 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 0.1mA, IC = 0 6 − − V Collector Cutoff Current ICEV VCE = 35V, VEB(off) = 0.4V − − 0.1 µA Base Cutoff Current IBEV VCE = 35V, VEB(off) = 0.4V − − 0.1 µA hFE VCE = 1V, IC = 0.1mA 20 − − VCE = 1V, IC = 1mA 40 − − VCE = 1V, IC = 10mA 80 − − VCE = 1V, IC = 150mA 100 − 300 VCE = 1V, IC = 500mA 40 − − ON Characteristics (Note 1) DC Current Gain Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 150mA, IB = 15mA − − 0.4 V IC = 500mA, IB = 50mA − − 0.75 V IC = 150mA, IB = 15mA 0.75 − 0.95 V IC = 500mA, IB = 50mA − − 1.2 V 250 − − MHz ON Characteristics (Note 1) (Cont’d) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage VCE(sat) VBE(sat) Small−Signal Characteristics Current Gain−Bandwidth Product fT IC = 20mA, VCE = 10V, f = 100MHz Collector−Base Capacitance Ccb VCB = 5V, IE = 0, f = 100kHz − − 6.5 pF Emitter−Base Capacitance Ceb VCB = 0.5V, IC = 0, f = 100kHz − − 30 pF Input Impedance hie IC = 1mA, VCE = 10V, f = 1kHz 1.0 − 15 kΩ Voltage Feedback Ratio hre IC = 1mA, VCE = 10V, f = 1kHz 0.1 − 8.0 x 10−6 Small−Signal Current Gain hfe IC = 1mA, VCE = 10V, f = 1kHz 40 − 500 Output Admittance hoe IC = 1mA, VCE = 10V, f = 1kHz 1.0 − 30 µmhos VCC = 30V, VEB(off) ( ) = 2V, IC = 150mA, 150mA IB1 = 15mA − − 15 ns − − 20 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA − − 225 ns − − 30 ns Switching Characteristics Delay Time td Rise Time tr Storage Time ts Fall Time tf Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max