NTE2938 P−Channel Field Effect Transistor Switch, TO−92 Type

NTE2938
P−Channel Field Effect Transistor
Switch, TO−92 Type Package
Features:
D Low Insertion Loss
D No Offset or Error Generated by Closed Switch
− Purely Resistive
− High Isolation Resistance From Driver
D Short Sample and Hold Aperture Time
D Fast Switching
Applications:
D Analog Switches
D Choppers
D Commutators
Absolute Maximum Ratings: (TA = +255C, Note 1 unless otherwise specified)
Gate−Drain or Gate−Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3W/5C
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Lead Temperature (During Soldering, 10sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +3005C
Note 1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. These are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the operational sections of the
specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Gate Reverse Current
IGSS
Test Conditions
VGS = 20V, VDS = 0V, Note 2
Min
Typ
Max
Unit
−
−
1
nA
Gate−Source Cutoff Voltage
VGS(off)
VDS = −15V, ID = −10nA
0.8
−
2.25
V
Gate−Source Breakdown Voltage
BVGSS
VDS = 0V, IG = 1mA
30
−
−
V
Drain Saturation Current
IDSS
VDS = −15V, VGS = 0V, Note 3
−1.5
−
−20
mA
Drain Cutoff Current
ID(off)
VDS = −15V, VGS = 10V, Note 2
−
−
−1
nA
Drain−Source ON Resistance
rDS(on)
VDS = −0.1V, VGS = 0V
−
−
300
W
Drain−Gate OFF Capacitance
Cdg(off)
VGS = 10V, VDS = 0V, f = 1Mhz, Note 4
−
5.5
−
pF
Source−Gate OFF Capacitance
Csg(off)
−
5.5
−
pF
Drain−Gate Plus Source−Gate
ON Capacitance
Cdg(on)
+ Csg(on)
VGS = VDS = 0V, f = 1Mhz, Note 4
−
32
−
pF
VDD = −6V, VGS(off) = 3V, RL = 10kW,
VGS(off) = 0V, Note 4
−
20
−
ns
−
25
−
ns
td(off)
−
20
−
ns
tf
−
25
−
ns
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
Note 2. Approximately doubles for every +105C increase in TA.
Note 3. Pulse Test Duration: Pulse Width = −3003s, Duty Cycle 3 3%.
Note 4. For design reference only, no 100% tested.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia. Max
D G S
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max