ROHM EMF32

EMF32 / UMF32N
Transistors
Power management (dual transistors)
EMF32 / UMF32N
DTA143T and 2SK3019 are housed independently in a EMT6 package.
(3)
(4)
0.22
zFeatures
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
(5)
(2)
(1)
1.2
1.6
zStructure
Silicon epitaxial planar transistor
ROHM : EMT6
0.65
(1)
(6)
1.25
2.0
1.3
(3)
(2)
(5)
0.2
Tr1
Tr2
0.65
(1)
(4)
(2)
Each lead has
same dimensions
Abbreviated symbol : F32
zEquivalent circuits
(3)
0.5
0.13
(6)
0.5 0.5
1.0
1.6
zExternal dimensions (Unit : mm)
zApplication
Power management circuit
1pin mark
(6)
0.7
(5)
0.15
(4)
0.9
2.1
0.1Min.
zPackaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMF32
EMT6
F32
T2R
8000
ROHM : UMT6
UMF32
UMT6
F32
TR
3000
Each lead has
same dimensions
Abbreviated symbol : F32
1/4
EMF32 / UMF32N
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Symbol
Limits
VCBO
−50
Collector-base voltage
VCEO
−50
Collector-emitter voltage
−5
VEBO
Emitter-base voltage
IC
−100
Collector current
PC
150(TOTAL)
Power dissipation
Tj
150
Junction temperature
Tstg
−55 to +150
Range of storage temperature
Unit
V
V
V
mA
mW
°C
°C
∗1
∗1 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Symbol
Limits
Parameter
VDSS
30
Drain-source voltage
VGSS
±20
Gate-source voltage
ID
100
Continuous
Drain current
200
IDP
Pulsed
IDR
100
Continuous
Reverse drain
current
IDRP
200
Pulsed
Total power dissipation
150(TOTAL)
PD
Tch
150
Channel temperature
Tstg
−55 to +150
Range of storage temperature
Unit
V
V
mA
mA
mA
mA
mW
°C
°C
∗1
∗1
∗2
∗1 PW≤10ms Duty cycle≤50%
∗2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−50
−
−
V
IC= −50µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V
IE= −50µA
ICBO
−
−
−0.5
µA
VCB= −50V
VEB= −4V
Parameter
Collector cutoff current
Conditions
IEBO
−
−
−0.5
µA
VCE(sat)
−
−
−0.3
V
IC/IB= −5mA/ −0.25mA
DC current transfer ratio
hFE
100
250
600
−
IC= −1mA, VCE= −5V
Input resistance
R1
3.29
4.7
6.11
kΩ
Transition frequency
fT
−
250
−
MHz
VCE= −10V, IE=5mA, f=100MHz
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
ms
pF
pF
pF
ns
ns
ns
ns
Emitter cutoff current
Collector-emitter saturation voltage
−
∗
∗ Transition frequency of the device
Tr2
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-threshold voltage
Static drain-source
on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverce transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
|Yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Conditions
VGS=±20V, VDS=0V
ID=10µA, VGS=0V
VDS=30V, VGS=0V
VDS=3V, ID=100µA
ID=10mA, VGS=4V
ID=1mA, VGS=2.5V
VDS=3V, ID=10mA
VDS=5V, VGS=0V, f=1MHz
ID=10mA, VDD 5V,
VGS=5V, RL=500Ω,
RGS=10Ω
2/4
EMF32 / UMF32N
Transistors
1k
VCE=−5V
DC CURRENT GAIN : hFE
500
200
Ta=100°C
25°C
−40°C
100
50
20
10
5
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m −100m
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
Tr1
−1
lC/lB=20
−500m
Ta=100°C
25°C
−40°C
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Fig.1 DC current gain vs. collector
current
0.15
200m
100m
Ta=25°C
Pulsed
3.5V
0.1
2.5V
0.05
2V
1
2
3
50m
20m
10m
5m
2m
1m
0.5m
4
5
0.1m
0
DRAIN-SOURCE VOLTAGE : VDS (V)
10
50
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
5
2
1
0.5
0.001 0.002
0.005 0.01 0.02
0.05 0.1
0.2
0.5
20
4
VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25
Static drain-source on-state
resistance vs. drain current ( Ι )
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
5
2
1
0.5
0.001 0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
DRAIN CURRENT : ID (A)
Fig.7
0
25
50
75
100
125 150
CHANNEL TEMPERATURE : Tch (°C)
10
DRAIN CURRENT : ID (A)
Fig.6
3
2
Fig.5 Gate threshold voltage vs.
channel temperature
Fig.4 Typical transfer characteristics
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
50
1
2
GATE-SOURCE VOLTAGE : VGS (V)
Fig.3 Typical output characteristics
20
Ta=125°C
75°C
25°C
−25°C
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
Static drain-source on-state
resistance vs. drain current ( ΙΙ )
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
3V
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
GATE THRESHOLD VOLTAGE : VGS(th) (V)
Tr2
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.8
Static drain-source on-state
resistance vs. gate-source
voltage
3/4
EMF32 / UMF32N
Transistors
VDS=3V
Pulsed
0.2
ID=100mA
6
ID=50mA
5
4
3
2
Ta=−25°C
25°C
75°C
125°C
0.1
0.05
0.02
0.01
0.005
1
0.002
0
−50 −25
0.001
0.0001 0.0002
0
25
50
75
100 125
150
0.0005 0.001 0.002
200m
50
Ta=25°C
Pulsed
100m
50m
20m
VGS=4V
10m
0V
5m
2m
1m
0.5m
0.05 0.1 0.2
50m
20m
20
10
Ciss
Coss
Crss
2
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m
1m
0.5m
0.2m
0.1m
0.5
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Ta=25°C
f=1MHZ
VGS=0V
5
VGS=0V
Pulsed
100m
Fig.10 Forward transfer admittance vs.
drain current
Static drain-source on-state
resistance vs. channel temperature
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
Fig.9
0.005 0.01 0.02
200m
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE : Tch (°C)
Fig.11 Reverse drain current vs.
source-drain voltage ( Ι )
1000
1
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
SWITHING TIME : t (ns)
7
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
0.5
VGS=4V
Pulsed
REVERSE DRAIN CURRENT : IDR (A)
9
8
td(off)
200
100
50
20
tr
td(on)
10
5
0.2m
0.1m
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.12 Reverse drain current vs.
source-drain voltage ( ΙΙ )
0.5
0.1
0.2
0.5
1
2
5
10
20
50
2
0.1 0.2
0.5
1
2
5
10
20
50
100
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (mA)
Fig.13 Typical capacitance vs.
drain-source voltage
Fig.14 Switching characteristics
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1