ROHM 2SC5916

2SC5916
Transistor
Medium power transistor (30V, 2A)
2SC5916
!External dimensions (Units : mm)
TSMT3
0.4
(1)
(3)
1.9
0.3
0.6
1.0MAX
0.85
Each lead has same dimensions
0
0.1
(1) Base
(2) Emitter
(3) Collector
0.7
0.16
(2)
0.95 0.95
2.8
1.6
2.9
!Features
1) High speed switching. (Tf : Typ. : 20ns at IC = 2A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 1.0A, IB = 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2113
Abbreviated symbol : UY
!Applications
Low frequency amplifier
High speed switching
!Structure
NPN Silicon epitaxial planar transistor
!Packaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
Taping
TL
3000
2SC5916
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
6
V
IC
2
A
ICP
4
A
Power dissipation
PC
500
mW
Junction temperature
Tj
150
°C
Tstg
−55~+150
°C
Collector current
Range of storage temperature
∗1
∗2
∗1 Pw=10ms
∗2 Each terminal mounted on a recommended land.
1/3
2SC5916
Transistor
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Conditions
Unit
BVCEO
30
−
−
V
IC=100µA
Collector−emitter breakdown voltage BVCBO
30
−
−
V
IC=1mA
BVEBO
6
−
−
V
IE=100µA
ICBO
−
−
1.0
µA
VCB=20V
IEBO
−
−
1.0
µA
VEB=4V
VCE(sat)
−
200
400
mV
IC=1.0A, IB=0.1A
Collector−base breakdown voltage
Emitter−base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector−emitter staturation voltage
DC current gain
hFE
120
−
390
−
Transition frequency
fT
−
250
−
MHz
Collector output capacitance
Cob
−
15
−
pF
VCB=10V, IE=0, f=1MHz
Turn-on time
Ton
−
25
−
ns
Storage time
Tstg
−
100
−
ns
Tf
−
20
−
ns
IC=2A
IB1=200mA
IB2=−200mA
VCC −25V
Fall time
VCD=2V, IC=100mA
VCE=10V, IE=−100mA, f=10MHz
!hFE RANK
Q
R
120-270
180-390
!Electrical characteristic curves
10
1000
1000
1ms
Ta=25°C
VCC=25V
IC/IB=10/1
1
100ms
DC
0.1
100
Ton
Tf
VCE=2V
Ta=125°C
DC CURRENT GAIN : hFE
Tstg
SWITCHING TIME (ns)
COLLECTOR CURRENT : IC (A)
10ms
100
Ta=−40°C
Ta=25°C
10
Single non repoetitive pulse
0.01
0.1
1
10
10
0.01
100
0.1
1
COLLECTOR EMITTER VOLTAGE : VCE (V)
1000
10
1
Ta=125°C
0.1
Ta=25°C
Ta=−40°C
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector
current
10
0.01
0.001
10
Ta=25°C
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
10
COLLECTOR SATURATION
VOLTAGE : VCE (sat)(V)
COLLECTOR SATURATION
VOLTAGE : VCE(sat)(V)
DC CURRENT GAIN : hFE
VCE=3V
1
10
IC/IB=10/1
VCE=5V
VCE=2V
0.1
Fig.3 DC current gain vs. collector
current
10
Ta=25°C
100
0.01
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
Fig.1 Safe operating area
1
0.001
1
0.001
10
COLLECTOR CURRENT : IC (A)
1
0.1
0.01
0.001
IC/IB=20/1
IC/IB=10/1
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. collector current
vs. collector current
2/3
2SC5916
Transistor
10
1000
10
COLLECTOR CURRENT : IC (A)
BASE EMITTER SATURATION
VOLTAGE : VBE(sat) (V)
Ta=−40°C
1
Ta=25°C
Ta=100°C
0.1
0.01
0.001
1
Ta=100°C
Ta=25°C
0.1
Ta=−40°C
0.01
0.01
0.1
1
0
10
COLLECTOR CURRENT : IC (A)
0.5
1
1.5
Ta=25°C
VCE=10V
100
10
1
−0.001
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.7 Base-emitter saturation voltage
vs. collector current
COLLECTOR OUTPUT CAPACITANCE : COB (pF)
TRANSITION FREQUENCY : fT (MHz)
VCE=2V
IC/IB=10/1
−0.01
−0.1
−1
−10
EMITTER CURRENT : IE (A)
Fig.8 Ground emitter propagation
characteristics
Fig.9 Transition frequency
100
Ta=25°C
f=1MHz
10
1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Collector output capacitance
!Switching characteristics measurement circuits
RL=12.5Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle
1%
IB1
IB2
Base current
waveform
90%
IC
Collector current
waveform
10%
Ton
Tstg Tf
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
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safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0