Xeon 1 Power Infrared Emitter LED OSI3XNE1E1E VER C.2 ■Features ■Outline ● Highest luminous flux ● Super energy efficiency ● Very long operating life ● Superior ESD protection Dimension ■Applications ● Night Vision ● Camera ● Outdoor./Indoor applications Maximum Rating Item ■Directivity (Ta=25 Symbol Value Unit DC Forward Current IF 1000 mA Pulse Forward Current* IFP 2000 mA Reverse Voltage VR 5 V Power Dissipation PD 1700 mW Operating Temperature Topr -30 ~ +85 Storage Temperature Tstg -40~ +100 Lead Soldering Temperature Tsol 260 *Pulse width Max.10ms ■Electrical /5sec Duty ratio max 1/10 -Optical Characteristics Forward Operating Current (DC) (Ta=25 Item Symbol Condition Min. Typ. Max. DC Forward Voltage VF IF=350mA - 1.5 1.7 V DC Reverse Current IR VR=5V - - 10 µA Peak Wavelength λP IF=350mA - 850 - nm Radiant Power PO IF=350mA 110 - - 1200 mW Forward Current, IF (mA) ■Absolute 1000 800 600 400 200 0 0 50% Power Angle 2θ1/2 IF=350mA - 140 - Note: Advises please attach heat sink to use if Power Dissipation is more than 0.5W. LED & Application Technologies deg 20 40 60 Ambient Temperature, TA ( 80 100 Xeon 1 Power Infrared Emitter LED OSI3XNE1E1E VER C.2 ■ Soldering Heat Reliability : Reflow soldering Profile · Reflow soldering should not be done more than two times. · When soldering, do not put stress on the LEDs during heating. · After soldering, do not warp the circuit board. · Repairing should not be done after the LEDs have been soldered. When repairing is unavoidable, a double-head soldering iron should be used. It should be confirmed beforehand whether the characteristics of the LEDs will or will not be damaged by repairing. Solder Average ramp-up rate = 3ºC/sec. max. Preheat temperature: 150º~180ºC Preheat time = 120 sec. max. Ramp-down rate = 6ºC/sec. max. Peak temperature = 220ºC max. Time within 3ºC of actual peak temperature = 25 sec. max. Duration above 200ºC is 40 sec. max. LED & Application Technologies