TSOP341..UH1 VISHAY Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP341..UH1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes and high data rates at a supply voltage of 3 V. 1 2 16661 3 Features • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage range: 2.7 V to 5.5 V • High immunity against ambient light Special Features • Enhanced data rate up to 4000 bit/s • Operation with short short bursts possible (≥ 6 cycles/burst) Mechanical Data Pinning: 1 = OUT, 2 = GND, 3 = VS Parts Table Part Carrier Frequency TSOP34130UH1 30 kHz TSOP34133UH1 33 kHz TSOP34136UH1 36 kHz TSOP34137UH1 36.7 kHz TSOP34138UH1 38 kHz TSOP34140UH1 40 kHz TSOP34156UH1 56 kHz Block Diagram Application Circuit 16833 30 kΩ 1 Input AGC Band Pass Demodulator OUT 2 PIN Control Circuit 17170 Transmitter TSOPxxxx with TSALxxxx Circuit 3 VS R1 = 100 Ω VS OUT GND +VS C1 = 4.7 µF µC VO GND GND R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 2.0 V by the external circuit. Document Number 82255 Rev. 1.1, 26-Nov-03 www.vishay.com 1 TSOP341..UH1 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Supply Voltage Parameter (Pin 3) Test condition VS - 0.3 to + 6.0 V Supply Current (Pin 3) IS 3 mA Output Voltage (Pin 1) VO - 0.3 to (VS+ 0.3) V Output Current (Pin 1) IO 10 mA Tj 100 °C Tstg - 25 to + 85 °C Junction Temperature Storage Temperature Range Operating Temperature Range Unit Tamb - 25 to + 85 °C Power Consumption (Tamb ≤ 85 °C) Ptot 30 mW Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C Electrical and Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Supply Current (Pin 3) Symbol Min Typ. Max Ev = 0 Test condition ISD 0.7 1.2 1.5 Ev = 40 klx, sunlight ISH Supply Voltage VS Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA Output Voltage Low (Pin 1) IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VOSL Irradiance (30-40 kHz) VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 Ee min Irradiance (56 kHz) VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 Irradiance (30-40 kHz) 1.3 2.7 d Unit mA mA 5.5 35 V m 250 mV 0.2 0.4 mW/m2 Ee min 0.3 0.5 mW/m2 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 Ee min 0.35 0.5 mW/m2 Irradiance (56 kHz) VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 Ee min 0.45 0.6 mW/m2 Irradiance tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Ee max Directivity Angle of half transmission distance www.vishay.com 2 ϕ1/2 30 W/m2 ± 45 deg Document Number 82255 Rev. 1.1, 26-Nov-03 TSOP341..UH1 VISHAY Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) t tpi *) T *) tpi w 6/fo is recommended for optimal function Output Signal VO 1) 2) VOH VOL 14337 3/f0 < td < 9/f0 tpi – 4/f0 < tpo < tpi + 6/f0 td1 ) t tpo2 ) Ton ,Toff – Output Pulse Width ( ms ) Optical Test Signal (IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms) Ee 1.0 0.9 0.8 0.6 0.5 0.3 0.1 0.0 0.1 16910 1.0 10.0 100.0 1000.010000.0 Ee – Irradiance ( mW/m2 ) Figure 4. Output Pulse Diagram 1.2 E e min / E e – Rel. Responsivity t po – Output Pulse Width ( ms ) l = 950 nm, optical test signal, fig.3 0.2 0.35 0.30 Output Pulse 0.25 0.20 0.15 Input Burst Duration 0.10 l = 950 nm, optical test signal, fig.1 0.05 0.00 0.1 1.0 10.0 1.0 0.8 0.6 0.4 100.0 1000.010000.0 0.9 1.1 1.3 f/f0 – Relative Frequency 16926 Figure 2. Pulse Length and Sensitivity in Dark Ambient f = f0"5% Df ( 3dB ) = f0/7 0.2 0.0 0.7 Ee – Irradiance ( mW/m2 ) 16907 Figure 5. Frequency Dependence of Responsivity t 600 ms T = 60 ms 94 8134 Output Signal, ( see Fig.4 ) VOH VOL Ton Toff Ee min– Threshold Irradiance ( mW/m 2 ) Optical Test Signal 600 ms VO Toff 0.4 Figure 1. Output Function Ee Ton 0.7 t 16911 Figure 3. Output Function Document Number 82255 Rev. 1.1, 26-Nov-03 4.0 3.5 3.0 Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K) 2.5 2.0 1.5 Ambient, l = 950 nm 1.0 0.5 0.0 0.01 0.10 1.00 10.00 100.00 E – Ambient DC Irradiance (W/m2) Figure 6. Sensitivity in Bright Ambient www.vishay.com 3 TSOP341..UH1 VISHAY 2.0 f = fo 1.5 f = 10 kHz 1.0 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 0.4 0.3 0.2 0.1 0.0 –30 –15 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 E – Field Strength of Disturbance ( kV/m ) 94 8147 Figure 8. Sensitivity vs. Electric Field Disturbances 30 45 60 75 90 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 2.0 1.6 15 Figure 10. Sensitivity vs. Ambient Temperature S ( l ) rel – Relative Spectral Sensitivity E e min– Threshold Irradiance ( mW/m 2 ) f(E) = f0 1.6 0 Tamb – Ambient Temperature ( qC ) 16918 Figure 7. Sensitivity vs. Supply Voltage Disturbances 2.0 Sensitivity in dark ambient 0.5 1000.0 DVsRMS – AC Voltage on DC Supply Voltage (mV) 16912 0.6 Ee min– Threshold Irradiance ( mW/m 2 ) Ee min– Threshold Irradiance ( mW/m 2 ) Vishay Semiconductors 16919 850 950 1050 l – Wavelength ( nm ) 1150 Figure 11. Relative Spectral Sensitivity vs. Wavelength 0° 1.0 10° 20° 30° Max. Envelope Duty Cycle 0.9 0.8 0.7 40° 0.6 1.0 0.5 0.9 50° 0.8 60° 0.4 0.3 f = 38 kHz, Ee = 2 mW/m2 0.2 70° 0.7 80° 0.1 0.0 0 16914 20 40 60 80 100 Figure 9. Max. Envelope Duty Cycle vs. Burstlength www.vishay.com 4 0.6 120 Burst Length ( number of cycles / burst ) 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 drel - Relative Transmission Distance Figure 12. Directivity Document Number 82255 Rev. 1.1, 26-Nov-03 TSOP341..UH1 VISHAY Vishay Semiconductors • Continuous signal at 38 kHz or at any other frequency • Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below). 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 17185 VS – Supply Voltage ( V ) IR Signal E e min – Sensitivity ( mW/m 2 ) 1.0 IR Signal from fluorescent lamp with low modulation Figure 13. Sensitivity vs. Supply Voltage Suitable Data Format The circuit of the TSOP341..UH1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: • Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). • Burst length should be 6 cycles/burst or longer. • After each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. • For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should have at least same length as the burst. • Up to 2200 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, RCMM Code, R-2000 Code, RECS-80 Code. When a disturbance signal is applied to the TSOP341..UH1 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP341..UH1 are: • DC light (e.g. from tungsten bulb or sunlight) Document Number 82255 Rev. 1.1, 26-Nov-03 0 16920 5 10 Time ( ms ) 15 20 Figure 14. IR Signal from Fluorescent Lamp with low Modulation www.vishay.com 5 TSOP341..UH1 VISHAY Vishay Semiconductors Package Dimensions in mm 14433 www.vishay.com 6 Document Number 82255 Rev. 1.1, 26-Nov-03 TSOP341..UH1 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82255 Rev. 1.1, 26-Nov-03 www.vishay.com 7