NJL5902R COBP PHOTO REFLECTOR GENERAL DESCRIPTION The NJL5902R is the compact surface mount type photo reflector in which Lead (Pb)-free reflow soldering permitted (260°C, 2times). The NJL5902R reduced to the operating dark current of 1/6 compared with our conventional products/NJL5901AR, and has realized the high S/N ratio in the combination of the high output LED and a high sensitivity Si photo-transistor. FEATURES OUTLINE (typ.) • High S/N ratio 2.6 • Operating dark current: 0.2μA max. Unit : mm ±0.1 (1.54) 0.5 ±0.1 APPLICATIONS K E PT CENTER • Detecting the location of optical pickup head for CD/DVD LED CENTER 0.85 (0.2) (0.2) 0.7 0.85 0.4 • Detecting the rotation of various motors 0.5 0.8 ±0.1 • Detecting the location of lens for DSC and Cellular phone’s camera module 0.5 A : anode K : cathode • Paper edge detection and mechanism timing detection of facsimile, copy machine etc. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATINGS Emitter Forward Current (Continuous) IF 30 Reverse Voltage (Continuous) VR 6 Power Dissipation 45 PD Detector Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation VCEO VECO IC PC Coupled Total Power Dissipation Operating Temperature Storage Temperature Reflow Soldering Temperature Ptot Topr Tstg Tsol 0.65 ±0.1 0.2 ±0.1 0.2 ±0.1 0.5 ±0.1 (0.62) (1.16) • Built-in visible light cut-off filter 1.9 ±0.1 • Miniature, thin, surface mount: 1.9mm × 2.6mm × 0.8mm (0.25) • Pb free solder re-flowing permitted: 260°C, 2times A C 0.65 ±0.1 (0.25) (0.5) (0.85) C : collector E : emitter PCB Pattern UNIT mA V mW 16 6 10 25 V V mA mW 60 -20 to +85 -40 to +85 260 mW °C °C °C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER Emitter Forward Voltage Reverse Current Capacitance SYMBOL TEST CONDITION MIN TYP MAX UNIT — — 1.3 10 25 — V μA pF — — 0.2 — — 250 0.2 30 30 — — VF IR Ct IF=4mA VR=6V VR=0V,f=1MHz 0.9 — — Detector Dark Current Collector-Emitter Voltage ICEO VCEO VCE=10V IC=100μA 16 Coupled Output Current Operating Dark Current *1 Rise Time Fall Time IO ICEOD tr tf IF=4mA,VCE=2V,d=0.7mm IF=4mA,VCE=2V IO=100μA,VCE=2V,RL=1KΩ,d=0.7mm IO=100μA,VCE=2V,RL=1KΩ,d=0.7mm — 90 — — — — μA V μA μA μs μs *1 Icoed may increase according to the periphery situation of the surface mounted product. 16-Feb-07 -1- NJL5902R OUTPUT CURRENT TEST CONDITION DARK CURRENT TEST CONDITION The infrared signal from LED is reflected at the aluminum surface. (0.8mm) Aluminum 1.5mm Light Sealed Dark Box Evapolation Surface ICEOD IF ICEOD IF VCE VCE RESPONSE TIME TEST CONDITION 0.7mm Aluminum Input Evapolation 90% Surface V+ RD P.G IF RL Output 10% OSC tr tf Io EDGE RESPONSE TEST CONDITION l=0mm l=0mm 0.7mm 0.7mm Aluminum Evaporation Surface Aluminum Evaporation Surface Direction X 16-Feb-07 Direction Y -2- NJL5902R Power Dissipation vs. Temperature Forward Current vs. Temperature 90 45 80 40 Forward Current IF(mA) 50 Power Dissipation P(mW) 100 70 60 Total Power Dissipation 50 40 30 20 35 30 25 20 15 10 Collector Power Dissipation 10 5 0 0 0 20 40 60 80 100 0 20 Ambient Temperature Ta(°C) 40 60 80 100 Ambient Temperature Ta(°C) TYPICAL CHARACTERISTICS Forward Voltage vs. Forward Current Forward Voltage vs. Temperature 100 1.6 Forward Voltage VF(V) Forward Current IF(mA) 1.4 10 IF=30mA 1.2 IF=4mA 1 1 0.8 0 1 2 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C) Forward Voltage VF(V) Dark Current vs. Temperature Operating Dark Current vs. Temperature 10000 10 Operating Dark Current Iceod(µA) Dark Current Iceo(nA) 1000 100 10 1 0.1 1 0.1 0.01 Vce=10V IF=4mA,Vce=2V 0.001 0.01 -40 -20 0 20 40 60 Ambient Temperature Ta(°C) 16-Feb-07 80 100 -40 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C) -3- NJL5902R Output Current vs. Forward Current (Ta=25°C) Output Current vs. Temperature 120 500 Relative Output Current Io/Io(25°C)(%) 450 400 Output Current Io(µA) 350 300 250 200 150 100 100 80 60 40 20 IF=4mA,Vce=2V IVce=2V,d=0.7m 50 0 0 0 2 4 6 8 10 -40 -20 Output Characteristics (Ta=25°C) 20 40 60 80 100 Vce Saturation (Ta=25°C) 500 0.5 450 IF=10mA Collector-Emitter Voltage Vce(V) 400 Output Current Io(µA) 0 Ambient Temperature Ta(°C) Forward Current IF(mA) 350 IF=8mA 300 250 IF=6mA 200 150 IF=4mA 100 0.4 0.3 Io=200μA Io=150μA Io=100μA Io=50μA 0.2 0.1 50 IF=2mA 0 0 0 1 2 3 4 5 0.1 1 Collector-Emitter Voltage Vce(V) Output Current vs. Distance (Ta=25°C) Output Current vs. Edge Distance(Ta=25°C) 120 120 IF=4mA,Vce=2V,d=0.7mm Relative Output Current Io/Io(max.)(%) IF=4mA,Vce=2V Relative Output Current Io/Io(max.)(%) 10 Forward Current IF(mA) 100 80 60 40 20 100 80 60 Direction Y 40 20 Direction X 0 0 0 1 2 3 Reflector Distance d(mm) 16-Feb-07 4 5 0 0.4 0.8 1.2 1.6 2 2.4 Edge Distance l(mm) -4- NJL5902R Spectral Response (Ta=25° C) Switching Time vs. Load Resistance (Ta=25° C) 1000 120 100 80 Switching Time t(µs) Relative Response (%) tr Vce=2V 60 40 100 tf td 10 20 Vce=2V,Io=100μA 0 500 1 600 700 800 Wavelength λ(nm) 16-Feb-07 900 1000 0.1 1 10 Load Resistance RL(k Ω) -5- NJL5902R PRECAUTION FOR HANDLING 1. Soldering to actual circuit board Soldering condition The surface temperature of plastic package is lower than 260°C. Soldering Method 1) Reflow Method Soldering to be done within twice under the recommended condition mentioned below f 260°C e 230°C 220°C d 180°C 150°C a : Temperature ramping rate b : Pre-heating temperature time c : Temperature ramping rate d : 220°C or higher time e : 230°C or higher time f : Peak temperature : 1 to 4°C/s : 150 to 180°C : 60 to 120s : 1 to 4°C /s : Shorter than 60s : Shorter than 40s g : Temperature ramping rate : 1 to 6°C /s : Lower than 260°C The temperature of the surface of mold package Room Temp. a b c g 2) Reflow Method (In case of infrared heating) The temperature profile is same as the above Avoid direct irradiation to the plastic package because it may absorb the Infrared Radiation and its surface temperature will be higher than the lead. 3) The other method Avoid rapid heating up like dipping the devices directly into the melting solder or vapor phase method (VPS). Solder the device in short time as soon as possible. If the device is heated and kept in high temperature for longer time, its reliability would be affected. 2. Cleaning Avoid washing the device after soldering by reflow method. 3. Attention in handling 1) 2) 3) 4) Treat not to touch the lens surface. Avoid dust and any other foreign materials on the lens surface such as paint, bonding material, etc. Never to apply reverse voltage (VEC) of more than 6V on the photo transistor when measuring the characteristics or adjusting the system. If applied, it causes to lower the sensitivity. When mounting, special care has to be taken on the mounting position and tilting of the device because it is very important to place the device to the optimum position to the object. 4. Storage Mount the device as soon as possible after opening the envelope. In order to prevent from degradation by the moisture at the reflow process, the device is contained in damp proof packaging. 16-Feb-07 -6- NJL5902R NJL5902RTaping Specification (TE1) 1. Taping Size 1) Carrier tape is used with Styrene type Carbonated Plastic. 2) Cover tape is used with electro statistically prevention treated Polyester type tape. 3) Product taping direction is to place the index mark against the pull out direction of the tape as in the drawing. Pull out direction of tape UNIT : mm φ 1.5 4.0 0.25 8.0 3.5 3.1 1.75 2.0 2.4 1.1 Cover Tape 4.0 Carrier Tape 2. Taping Strength Pull up the cover tape from the carrier tape, and when the opening angle comes around 10 to 15°, and the peeling-off strength is to be within the power of 20 to 70g. 3. Packaging 1) The taped products are to be rolled up on the taping reel as on the drawing. 2) Rolling up specification 2-1) Start rolling : Carrier tape open space more than 20 Pieces. 2-2) End of rolling : Carrier tape open space more than 20 Pieces, and 2 round of reel space at the cover tape only. 3) Taping quantity : 2,000 Pieces. 4) Seal off after putting each reels in a damp proof bag with silica gel. 8.5 φ 180 φ 60 φ 13 Label [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. 16-Feb-07 -7-