RB215T-90 Diodes Schottky barrier diode RB215T-90 zExternal dimensions (Unit : mm) zApplications General rectification (Common cathode dual chip) zStructure 4.5±0.3 0.1 2.8±0.2 0.1 8.0±0.2 12.0±0.2 zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability 5.0±0.2 ① 13.5MIN 1.2 1.3 zConstruction Silicon epitaxial planar 15.0±0.4 0.2 8.0 10.0±0.3 0.1 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Symbol VRM Limits 90 Unit V VR 90 20 100 150 -40 to +150 V A A ℃ ℃ Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature Io IFSM Tj Tstg (*1)Tc=100℃max Per chip : Io/2 zElectrical characteristic (Ta=25°C) Parameter Symbol Forward characteristics VF Reverse characteristics Thermal impedance θjc IR Conditions Min. - Typ. - Max. 0.75 Unit V IF=10A - - 400 1.75 µA ℃/W VR=90V junction to case 1/3 RB215T-90 Diodes zElectrical characteristic curves Ta=125℃ 1 Ta=75℃ Ta=150℃ 100000 Ta=125℃ Ta=-25℃ 0.1 Ta=25℃ 10000 Ta=75℃ Ta=25℃ 100 10 Ta=-25℃ 1 1000 100 10 0.1 1 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 300 Ta=25℃ IF=10A n=30pcs 710 700 690 680 REVERSE CURRENT:IR(uA) 720 Ta=25℃ VR=90V n=30pcs 250 200 150 100 AVE:46.0uA 50 AVE:692.7mV 0 VF DISPERSION MAP RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 150 100 50 1270 1260 1250 1240 1230 1220 AVE:1257.3pF IR DISPERSION MAP Ct DISPERSION MAP 1000 30 200 1280 1200 0 300 AVE:168.0A 25 20 AVE:21.6ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 5 0 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 0 1 IFSM DISRESION MAP trr DISPERSION MAP 1000 100 10 1 10 TIME:t(s) IFSM-t CHARACTERISTICS 100 IF=10A DC 40 10 100 50 IM=100mA 1ms time Rth(j-a) 300us Rth(j-c) 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) t 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 30 Ta=25℃ f=1MHz VR=0V n=10pcs 1290 1210 670 250 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1300 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 100 200 300 400 500 600 700 800 900 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 FORWARD VOLTAGE:VF(mV) f=1MHz 1000 0.01 PEAK SURGE FORWARD CURRENT:IFSM(A) 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150℃ 10 1000000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) 100 D=1/2 30 Sin(θ＝180) 20 10 0.1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 50 2/3 RB215T-90 Diodes 20 DC D=1/2 10 Sin(θ＝180) 80 80 70 70 60 50 D=1/2 40 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC 30 20 10 Sin(θ＝180) 0 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 30 0 25 50 60 DC D=1/2 50 40 30 20 Sin(θ＝180) 10 0 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 5 0 AVE:11.6kV C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1