RJK5015DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 1 of 6 Symbol VDSS VGSS ID ID (pulse)Note1 Ratings 500 ±30 25 75 Unit V V A A IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg 25 75 7 2.7 150 0.833 150 –55 to +150 A A A mJ W °C/W °C °C RJK5015DPK Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 500 — — 3.0 — Typ — — — — 0.21 Max — 1 ±0.1 4.5 0.24 Unit V µA µA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 2600 270 32 42 59 103 45 66 14 29 0.96 — — — — — — — — — — 1.60 pF pF pF ns ns ns ns nC nC nC V trr — 380 — ns Body-drain diode reverse recovery time Notes: 4. Pulse test REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 2 of 6 Test conditions ID = 10 mA, VGS = 0 VDS = 500 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 12.5 A, VGS = 10 V Note4 VDS = 25 V VGS = 0 f = 1 MHz ID = 12.5 A VGS = 10 V RL = 20 Ω Rg = 10 Ω VDD = 400 V VGS = 10 V ID = 25 A IF = 25 A, VGS = 0 Note4 IF = 25 A, VGS = 0 diF/dt = 100 A/µs RJK5015DPK Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 Drain Current ID (A) Channel Dissipation Pch (W) 400 300 200 100 0 50 100 150 1 10 m 0 s 10 µs µs PW = 10 ms (1shot) 1 Operation in this area is limited by RDS(on) 0.1 DC Operation (Tc = 25°C) 1 1000 100 10 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 6.2 V 6V 30 5.8 V 20 5.6 V 5.4 V 10 4 8 12 16 20 10 5 2 1 Tc = 75°C 0.5 25°C −25°C 0.2 VGS = 5.2 V 0 VDS = 10 V Pulse Test 50 10 V 40 100 6.4 V 8 V, 9 V Drain Current ID (A) Pulse Test Drain Current ID (A) 10 100 0.01 0.1 200 50 0.1 0 20 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance vs. Temperature 1 VGS = 10 V 0.5 0.2 0.1 0.05 0.02 Pulse Test 0.01 1 3 10 30 100 300 Drain Current ID (A) REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 3 of 6 1000 Static Drain to Source on State Resistance RDS(on) (Ω) Drain to Source on State Resistance RDS(on) (Ω) Ta = 25°C 0.5 VGS = 10 V 0.4 12.5 A 5A ID = 25 A 0.3 0.2 0.1 Pulse Test 0 −25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RJK5015DPK Typical Capacitance vs. Drain to Source Voltage Body-Drain Diode Reverse Recovery Time 100000 500 200 100 50 20 10 5 di / dt = 100 A / µs VGS = 0, Ta = 25°C 2 1 3 10 30 100 Reverse Drain Current 300 10000 3000 1000 300 0 20 40 60 Gate Charge 80 100 Qg (nC) Gate to Source Cutoff Voltage vs. Case Temperature Gate to Source Cutoff Voltage VGS(off) (V) 5 ID = 10 mA 4 1 mA 0.1 mA 2 1 VDS = 10 V 0 -25 0 25 50 75 Case Temperature 100 125 150 Tc (°C) REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 4 of 6 IDR (A) 0 Reverse Drain Current 4 VDD = 400 V 250 V 100 V 300 VDS (V) 50 VGS (V) 16 8 200 200 Reverse Drain Current vs. Source to Drain Voltage 12 VDS 100 Drain to Source Voltage Gate to Source Voltage VDS (V) Drain to Source Voltage VDD = 100 V 250 V 400 V 600 400 VGS Crss 10 0 1000 IDR (A) ID = 25 A Coss 100 Dynamic Input Characteristics 800 Ciss 30 1 3 VGS = 0 f = 1 MHz 30000 Capacitance C (pF) Reverse Recovery Time trr (ns) 1000 Pulse Test 40 30 20 10 0 5 V, 10 V 0.4 VGS = 0 V, −5 V 0.8 1.2 Source to Drain Voltage 1.6 2.0 VSD (V) RJK5015DPK Normalized Transient Thermal Impedance γ s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 0.03 PDM D= 0.02 1 0.0 0.01 10 µ PW T PW T 100 µ 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 90% D.U.T. RL 10 Ω Vin 10 V VDD = 250 V Vin Vout 10% 10% 10% 90% td(on) REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 5 of 6 tr 90% td(off) tf RJK5015DPK Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part No. RJK5015DPK-00-T0 Quantity 360 pcs REJ03G1360-0200 Rev.2.00 Apr 18, 2007 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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