RENESAS RJM0306JSP

Preliminary Datasheet
RJM0306JSP
Silicon N / P Channel Power MOS FET
High Speed Power Switching
REJ03G1571-0101
Rev.1.01
May 28, 2010
Features





Two elements each of N and P channels are incorporated (suitable for H-bridge circuit)
High density mounting
Low on-resistance
Capable of 4 V gate drive
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
S7
MOS4
Pch
65
87
Pin No.
MOS3
Pch
8G
1
6G
2
Element
MOS1 (Nch)
MOS4 (Pch)
MOS1 (Nch)
Electrode
Drain
Gate
MOS1 (Nch)
3
12
D1
4
3
D5
4
2G
MOS2 (Nch)
Source
Gate
MOS2 (Nch)
4G
MOS1
Nch
MOS2 (Nch)
5
MOS2
Nch
6
7
S3
8
MOS3 (Pch)
MOS3 (Pch)
MOS3 (Pch)
MOS4 (Pch)
MOS4 (Pch)
Drain
Gate
Source
Gate
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
VGSS
ID
ID (pulse)Note 1
Note 4
IAP
Note 4
EAR
PchNote 2
PchNote 3
Tch
Storage temperature
Notes: 1.
2.
3.
4.
Tstg
Value
Unit
MOS1, 2 (Nch)
30
MOS3, 4 (Pch)
–30
20
3.5
28
3.5
1.22
20
–3.5
–28
–3.5
1.22
V
1.5
2.2
150
V
A
A
A
mJ
W
W
C
–55 to +150
C
PW  10 s, duty cycle  1%
1 Drive operation: When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s
2 Drive operation: When using the glass epoxy board (FR4 40  40  1.6 mm), PW  10 s
Value at Tch = 25C, Rg  50 
REJ03G1571-0101 Rev.1.01
May 28, 2010
Page 1 of 11
RJM0306JSP
Preliminary
Electrical Characteristics
MOS1, 2 (Nch)
(Ta = 25C)
Item
Drain to source breakdown
voltage
V(BR)DSS
Min
30
Gate to source breakdown
voltage
Zero gate voltage drain current
Zero gate voltage drain current
V(BR)GSS
20
—
—
V
IG = 100 A, VDS = 0
IDSS
IDSS
—
—
—
—
1
10
A
A
VDS = 30 V, VGS = 0
Gate to source leak current
Gate to source cutoff voltage
IGSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
—
1.0
—
—
—
50
10
2.5
65
A
V
m
VDS = 24 V, VGS = 0,
Ta = 125C
VGS = 16 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 2.0 ANote5, VGS = 10 V
Static drain to source on state
resistance
RDS(on)
—
70
105
m
ID = 2.0 ANote5, VGS = 4.5 V
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
RDS(on)
—
80
130
m
ID = 2.0 ANote5, VGS = 4.0 V
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
—
—
—
—
—
—
—
—
—
—
—
—
290
85
30
5.0
1.2
0.6
12
12
35
8
0.88
25
—
—
—
—
—
—
—
—
—
—
1.15
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
VDS = 10 V, VGS = 0 ,
f = 1 MHz
Body-drain diode reverse
recovery time
Note:
Symbol
trr
Typ
—
Max
—
Unit
V
Test Conditions
ID = 10 mA, VGS = 0
VDD = 10 V, VGS = 10 V,
ID = 3.5 A
VGS = 10 V, ID = 2.0 A,
VDD  10 V, RL = 5 ,
RG = 4.7 
IF = 3.5 A, VGS = 0Note5
IF = 3.5A, VGS = 0
diF/dt = 100 A/s
5. Pulse test
REJ03G1571-0101 Rev.1.01
May 28, 2010
Page 2 of 11
RJM0306JSP
Preliminary
MOS3, 4 (Pch)
(Ta = 25C)
Item
Drain to source breakdown
voltage
V(BR)DSS
Min
–30
Gate to source breakdown
voltage
Zero gate voltage drain current
Zero gate voltage drain current
V(BR)GSS
20
—
—
V
IG = 100 A, VDS = 0
IDSS
IDSS
—
—
—
—
–1
–10
A
A
VDS = –30 V, VGS = 0
Gate to source leak current
Gate to source cutoff voltage
IGSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
—
–1.0
—
—
—
90
10
–2.5
120
A
V
m
VDS = –24 V, VGS = 0,
Ta = 125C
VGS = 16 V, VDS = 0
VDS = –10 V, ID = –1 mA
ID = –2.0 ANote5, VGS = –10 V
Static drain to source on state
resistance
RDS(on)
—
140
210
m
ID = –2.0 ANote5, VGS = –4.5 V
Static drain to source on state
resistance
Input capacitance
Output capacitance
RDS(on)
—
160
260
m
ID = –2.0 ANote5, VGS = –4.0 V
Ciss
Coss
—
—
320
85
—
—
pF
pF
VDS = –10 V, VGS = 0,
f = 1 MHz
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
—
—
—
—
—
—
—
—
—
—
50
6.0
1.4
1.0
30
17
30
7
–0.92
30
—
—
—
—
—
—
—
—
–1.2
—
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Note:
Symbol
trr
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
VDD = –10 V, VGS = –10 V,
ID = –3.5 A
VGS = –10 V, ID= –2.0 A,
VDD  –10 V, RL = 5.0 ,
RG = 4.7 
IF = –3.5 A, VGS = 0Note5
IF = –3.5 A, VGS = 0
diF/dt = 100 A/s
5. Pulse test
REJ03G1571-0101 Rev.1.01
May 28, 2010
Page 3 of 11
RJM0306JSP
Preliminary
Main Characteristics
MOS1, 2 (Nch)
Maximum Safe Operation Area
Typical Output Characteristics
10
10
μs
0
1 m μs
s
4.2 V
10
DC
1
PW
Op
=1
0m
er
s(
1s
ati
on
(P
W
0.1 Operation in
≤1
ho
t)
N
0 s ote6
)
this area is
limited by RDS (on)
0.01
4.5 V
10 V
3.2 V
5
2.8 V
Ta = 25°C
1 shot Pulse
0.001
0.1
10
100
0
Drain to Source on State Resistance
RDS (on) (mΩ)
10
0.1
0.01
Tc = 150°C
25°C
−40°C
Static Drain to Source on State Resistance
RDS (on) (mΩ)
1
2
3
4
5
1000
4.5 V
100
VGS = 4 V
10 V
Pulse Test
10
0.1
10
1
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
200
1000
Pulse Test
ID = 2 A
150
VGS = 4 V
4.5 V
100
50
10 V
0
−50
−25
Capacitance C (pF)
Drain Current ID (A)
VDS = 10 V
Pulse Test
0.0001
10
Static Drain to Source on State Resistance
vs. Drain Current
Typical Transfer Characteristics
0.001
5
Drain to Source Voltage VDS (V)
Note 6: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.00001
0
VGS = 0 V
Pulse Test
1
Drain to Source Voltage VDS (V)
1
3.8 V
10
Drain Current ID (A)
Drain Current ID (A)
100
VGS = 0
f = 1 MHz
Ciss
100
Coss
Crss
10
0
25
50
75 100 125 150
Case Temperature Tc (°C)
REJ03G1571-0101 Rev.1.01
May 28, 2010
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
Page 4 of 11
RJM0306JSP
Preliminary
MOS1, 2 (Nch)
Reverse Drain Current vs.
Source to Drain Voltage
40
30
20
ID = 3.5 A
VGS
16
VDD = 25 V
10 V
5V
12
VDS
20
8
VDD = 25 V
10 V
5V
10
4
0
0
2
4
6
8
10
Reverse Drain Current IDR (A)
50
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
10 V
5V
5
VGS = 0 V, –5 V
Pulse Test
0
10
Gate Charge Qg (nc)
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
2
L = 100 μH
VDD = 15 V
duty < 0.1 %
Rg ≥ 50 Ω
1.5
1
0.5
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
V (BR)DSS
Rg
D. U. T
IAP
VDD
VDS
Vin
15 V
ID
50 Ω
0
REJ03G1571-0101 Rev.1.01
May 28, 2010
VDD
Page 5 of 11
RJM0306JSP
Preliminary
MOS1, 2 (Nch)
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 10 V
90%
td(on)
REJ03G1571-0101 Rev.1.01
May 28, 2010
10%
tr
90%
td(off)
tf
Page 6 of 11
RJM0306JSP
Preliminary
MOS3, 4 (Pch)
Maximum Safe Operation Area
Typical Output Characteristics
−10
−100
10
μs
0
1 m μs
s
PW
DC
−1
−0.01
Drain Current ID (A)
Drain Current ID (A)
−10
−0.1
−4.5 V Pulse Test
−5.0 V
−10 V
−4.0 V
10
=1
0m
Op
s(
er
1s
ati
on
(P
W
Operation in
this area is
limited by RDS (on)
≤1
ho
t)
N
0 s ote6
)
−5
−3.0 V
−2.5 V
Ta = 25°C
1 shot Pulse
−0.001
−0.1
VGS = 0 V
−1
−10
−100
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Typical Transfer Characteristics
Drain to Source on State Resistance
RDS (on) (mΩ)
VDS = −10 V
−1 Pulse Test
−0.1
−0.01
Tc = 150°C
Static Drain to Source on State Resistance
RDS (on) (mΩ)
−0.00001
0
25°C
−40°C
−1
−2
−3
−4
−5
10000
Pulse Test
1000
VGS = −4 V
−4.5 V
100
−10 V
10
−0.1
−10
−1
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
Typical Capacitance vs.
Drain to Source Voltage
250
1000
ID = −2 A
VGS = 0
f = 1 MHz
VGS = −4 V
200
150
−4.5 V
−10 V
100
50
Capacitance C (pF)
Drain Current ID (A)
−10
−0.0001
−10
Drain to Source Voltage VDS (V)
Note 6: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
−0.001
−5
0
Ciss
100
Coss
Crss
Pulse Test
0
−50
−25
0
25
50
75 100 125 150
Case Temperature Tc (°C)
REJ03G1571-0101 Rev.1.01
May 28, 2010
10
−0
−10
−20
−30
−40
−50
Drain to Source Voltage VDS (V)
Page 7 of 11
RJM0306JSP
Preliminary
MOS3, 4 (Pch)
Reverse Drain Current vs.
Source to Drain Voltage
0
VDD = –25 V
–10 V
–5 V
–10
–4
–20
–30
–8
VDS
VDD = –25 V
–10 V
–5 V
VGS –12
–40
–16
ID = –3.5 A
–50
0
2
4
6
–10
Reverse Drain Current IDR (A)
0
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
–10 V
–5
–5 V
VGS = 0 V, 5 V
Pulse Test
–20
10
8
0
Gate Charge Qg (nc)
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage VSD (V)
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
2
L = 100 μH
VDD = –15 V
duty < 0.1 %
Rg ≥ 50 Ω
1.5
1
0.5
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
2
L • IAP2 •
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
D. U. T
VDD
IAP
VDS
Vin
–15 V
50 Ω
ID
0
REJ03G1571-0101 Rev.1.01
May 28, 2010
VDD
Page 8 of 11
RJM0306JSP
Preliminary
MOS3, 4 (Pch)
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
Switching Time Waveform
Vin
10%
D.U.T.
Rg
Vin
–10 V
REJ03G1571-0101 Rev.1.01
May 28, 2010
RL
90%
VDD
= –10 V
90%
90%
Vout
10%
td(on)
tr
10%
td(off)
tf
Page 9 of 11
RJM0306JSP
Preliminary
Common
Power vs. Temperature Derating
Pch (W)
4.0
Channel Dissipation
3.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
2.0
2
Dr
ive
O
pe
1D
ra
tio
riv
1.0
eO
n
pe
rat
0
50
ion
100
150
Normalized Transient Thermal Impedance γs (t)
Case Temperature
200
Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
0.1
D=1
0.5
0.2
0.1
0.05
0.02
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
1
0.0
lse
t pu
sho
0.01
1
PDM
D=
0.001
PW
T
PW
T
0.0001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Normalized Transient Thermal Impedance γs (t)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
θch - f(t) = γs (t) x θch - f
θch - f = 210°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
e
uls
ot p
1sh
PDM
0.001
D=
PW
T
PW
T
0.0001
10 μ
100 μ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
REJ03G1571-0101 Rev.1.01
May 28, 2010
Page 10 of 11
RJM0306JSP
Preliminary
Package Dimensions
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
F
Package Name
SOP-8
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
* 3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference Dimension in Millimeters
Symbol
Min
A1
A
L1
L
y
D
E
A2
A1
A
bp
b1
c
c1
HE
e
x
y
Z
L
L1
Detail F
Nom Max
4.90 5.3
3.95
0.10 0.14 0.25
1.75
0.34 0.40 0.46
0.15 0.20
0.25
0°
8°
5.80 6.10 6.20
1.27
0.25
0.1
0.75
0.40 0.60 1.27
1.08
Ordering Information
Part No.
RJM0306JSP-00-J0
Quantity
2500 pcs
REJ03G1571-0101 Rev.1.01
May 28, 2010
Shipping Container
Taping
Page 11 of 11
Notice
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(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
7F, No. 363 Fu Shing North Road Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632
Tel: +65-6213-0200, Fax: +65-6278-8001
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2010 Renesas Electronics Corporation. All rights reserved.
Colophon 1.0