RENESAS RJH1BF7RDPQ-80

Preliminary Datasheet
RJH1BF7RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
R07DS0394EJ0100
Rev.1.00
May 16, 2011
Features
•
•
•
•
Voltage resonance circuit use
Reverse conducting IGBT with monolithic body diode
High efficiency device for induction heating
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 35 A, VGE = 15V, Tj = 25°C)
• Gate to emitter voltage rating ±30 V
• Pb-free lead plating
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
1. Gate
2. Collector
3. Emitter
4. Collector
G
1 2
E
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
Ratings
1100
±30
60
35
100
Unit
V
V
A
A
A
Collector to emitter diode forward current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
iDF
PC
θj-c
Tj
Tstg
25
250
0.5
150
–55 to +150
A
W
°C/W
°C
°C
Notes: 1. Pulse width limited by safe operating area.
R07DS0394EJ0100 Rev.1.00
May 16, 2011
Page 1 of 6
RJH1BF7RDPQ-80
Preliminary
Electrical Characteristics
(Tj = 25°C)
Symbol
Min
Typ
Max
Unit
Zero gate voltage collector current
Item
ICES
⎯
⎯
100
μA
VCE = 1100 V, VGE = 0
Gate to emitter leak current
IGES
⎯
⎯
±1
μA
VGE = ±30 V, VCE = 0
Gate to emitter cutoff voltage
VGE(off)
3.5
5.0
7.0
V
VCE = 10 V, IC = 1 mA
Collector to emitter saturation voltage
VCE(sat)
⎯
1.6
2.1
V
IC = 35 A, VGE = 15 V Note2
⎯
1.95
2.35
V
IC = 60 A, VGE = 15 V
VCE = 25 V
VGE = 0 V
f = 1 MHz
Input capacitance
Cies
⎯
3260
⎯
pF
Output capacitance
Coes
⎯
67
⎯
pF
Reverse transfer capacitance
Cres
⎯
54
⎯
pF
Switching time
td(on)
⎯
58
⎯
ns
C-E diode forward voltage
tr
⎯
78
⎯
ns
td(off)
⎯
144
⎯
ns
tf
⎯
208
⎯
ns
VF
⎯
3.0
3.9
V
Test Conditions
Note2
IC = 35 A
VCE = 600 V, VGE = 15 V
Rg = 5 Ω Note2
Resistive Load
IF = 10 A Note2
Notes: 2. Pulse test
R07DS0394EJ0100 Rev.1.00
May 16, 2011
Page 2 of 6
RJH1BF7RDPQ-80
Preliminary
Main Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
100
100
Collector Current IC (A)
PW = 10 μs
10
1
0.1
0.01
1
Collector Current IC (A)
80
10
100
1000
8.4 V
8.2 V
9V
10 V
8V
60
15 V, 20 V
7.8 V
40
7.6 V
7.4 V
20
7.2 V
VGE = 7 V
0
1
0
10000
2
3
4
5
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
60
VCE = 10 V
Pulse Test
50
40
Tc = 75°C
30
25°C
–25°C
20
10
0
2
4
6
8
10
12
3.6
Ta = 25°C
Pulse Test
3.2
2.8
IC = 100 A
2.4
60 A
2.0
35 A
1.6
6
Gate to Emitter Voltage VGE (V)
4.0
3.5
VGE = 15 V
Pulse Test
IC = 100 A
3.0
60 A
2.5
35 A
2.0
1.5
1.0
−25
0
25
50
75
100 125 150
Junction Temparature Tj (°C)
R07DS0394EJ0100 Rev.1.00
May 16, 2011
8
10
12
14
16
18
20
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage VGE(off) (V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
8.6 V
Ta = 25°C
Pulse Test
8.8 V
Tc = 25°C
Single pulse
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector Current IC (A)
1000
Gate to Emitter Cutoff Voltage
vs. Junction Temperature (Typical)
10
VCE = 10 V
Pulse Test
8
IC = 10 mA
6
4
1 mA
2
0
-25
0
25
50
75
100 125 150
Junction Temperature
Tj (°C)
Page 3 of 6
RJH1BF7RDPQ-80
Preliminary
Typical Capacitance vs.
Colloctor to Emitter Voltage
Forward Current vs.Forward Voltage (Typical)
10000
VGE = 0 V
Ta = 25°C
Pulse Test
25
Cies
Capacitance C (pF)
Forward Current IF (A)
30
20
15
10
100
Coes
Cres
10
VGE = 0 V
f = 1 MHz
Ta = 25°C
5
0
1
0
2
4
0
8
6
50
100
150
200
250
300
C-E Diode Forward Voltage VECF (V)
Colloctor to Emitter Voltage VCE (V)
Dynamic Input Characteristics (Typical)
Switching Characteristics (Typical) (1)
16
VGE
VCE
600
VCC = 600 V
300 V
12
400
8
200
4
VCC = 600 V
300 V
0
0
40
80
IC = 35 A
Ta = 25°C
120
160
1000
tf
Switching Time t (ns)
800
Gate to Emitter Voltage VGE (V)
Colloctor to Emitter Voltage VCE (V)
1000
td(off)
100
td(on)
10
tr
VCC = 600 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C, Resistive load
1
0
200
1
10
100
Gate Charge Qg (nC)
Colloctor Current IC (A)
Switching Characteristics (Typical) (2)
Switching Characteristics (Typical) (3)
10000
1000
Switching Time t (ns)
Switching Time t (ns)
VCC = 600 V, VGE = 15 V
IC = 35 A, Ta = 25°C, Resistive load
1000
td(off)
tf
100
tr
td(on)
10
tf
td(off)
tr
100
td(on)
VCC = 600 V, VGE = 15 V
IC = 35 A, Rg = 5 Ω, Resistive load
10
1
10
Gate Resistance Rg (Ω)
R07DS0394EJ0100 Rev.1.00
May 16, 2011
100
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Page 4 of 6
RJH1BF7RDPQ-80
Preliminary
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3 0.2
0.1
θj − c(t) = γs (t) • θj − c
θj − c = 0.5 °C/W, Tc = 25 °C
0.1 0.05
0.02
PDM
D=
1 shot pulse
0.03
PW
T
PW
T
0.01
0.01
10 μ
100 μ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Ic Monitor
90%
RL
Vin
Vin Monitor
10%
90%
Rg
D.U.T.
Vin = 15 V
VCC
Ic
10%
10%
td(on)
tr
ton
R07DS0394EJ0100 Rev.1.00
May 16, 2011
90%
td(off)
tf
toff
Page 5 of 6
RJH1BF7RDPQ-80
Preliminary
Package Dimensions
JEITA Package Code
⎯
RENESAS Code
PRSS0003ZE-A
Previous Code
⎯
MASS[Typ.]
6.0g
Unit: mm
φ3.60 ± 0.1
5.02 ± 0.19
15.94 ± 0.19
17.63
4.5 max
20.19 ± 0.38
21.13 ± 0.33
6.15
Package Name
TO-247
5.45
0.1
2.10 +– 0.2
13.26
1.27 ± 0.13
5.45
0.71 ± 0.1
2.41
Ordering Information
Orderable Part Number
RJH1BF7RDPQ-80-T2
R07DS0394EJ0100 Rev.1.00
May 16, 2011
Quantity
450 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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Colophon 1.1