polyfet rf devices L8711P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 7.0 Watts Single Ended Package Style S08PP "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 60 Watts Maximum Junction Temperature o 2.50 C/W o 150 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain Drain Efficiency VSWR TYP 8.0 A Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 7.0 WATTS OUTPUT ) MAX 10 50 Load Mismatch Tolerance Drain to Gate Voltage 10:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz % Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 7.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 7.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance Rdson Saturation Resistance Idsat Saturation Current Ciss Common Source Input Capacitance Crss Common Source Feedback Capacitance Coss Common Source Output Capacitance 36 2 Ids = 0.20 mA, Vgs = 0V Ids = 0.20 A, Vgs = Vds 1.7 Mho Vds = 10V, Vgs = 5V 0.40 Ohm Vgs = 20V, Ids = 8.00 A 13.00 Amp Vgs = 20V, Vds = 10V 50.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz 2.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz 40.0 pF Vds = 7.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/11/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com L8711P POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L8 7 1 1 P Pin vs Pout F =5 0 0 M H Z ; I dq=.4 ;V ds= 7 .5 V dc L1C 1DIE CAPACITANCE 10 15 1000 14 8 Pout 13 100 Ciss 6 Gain 12 Coss 4 10 11 Crss 2 10 Efficiency@7W =50% 1 0 9 0 0.2 0.4 0.6 P in in wa tts 0.8 0 5 10 1 15 20 25 30 VDS IN VOLTS IV CURVE ID & GM VS VGS L1C 1 DIE IV L1C 1 DIE ID, GM vs VG 100 16 14 ID IN AMPS 12 ID 10 8 10 6 4 2 G 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 vg=10v 18 vg=12v 20 1 0 2 Zin Zout 4 6 8 Vgs in Volts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/11/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com