polyfet rf devices MLCQ02 Power RF Amplifiers Power = 40.0 Watts Bandwidth = 20 to 512 Mhz Gain = 37.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MLCQ02 is a 40 Watt, high gain amplifier module covering a bandwidth of 20-512 Mhz. This compact module design is suitable for military applications in a rugged environment. An ALC pin is provided to control the output power, gain and blanking of the module. Absolute Maximum Ratings (T=25 oC) Parameter DC supply Voltage 1 DC supply Voltage 2 AGC Voltage Symbol VDD1 VDD2 VAGC Value AGC Current VAGCI 2.50 Input Power Output Power Operating Case Temp. Storage Temperature Pin Pout Tc Tstg 32.0 8.5 0.025 60.0 -40 to +85 -55 to +100 Unit V V V mA W W o C oC Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms, Vdd = 28.0 Volts, Idq = 1.4 Amps ) Parameter Frequency Range Outut Power Power Gain Total Efficiency 2nd Harmonics Intermod - 2 tone Load Mismatch Tolerance Vagc Voltage Symbol BW Po PG Pulse Responese Time Pr Min Max 512 40.0 37.0 h dso Im3 VSWR VAGC Typical 20 30 -30.00 -15.00 10:1 8.0 40.0 Unit Test Conditions Mhz 50 ohm load Watts Pin = 10.0 dbm Vagc = 8.0 V dB Pout = 40.0 Watts Vagc = 8.0 V Pout = 40.0 Watts % Pout = 40.0 Watts @ dBc Mhz dBc AvePwr= 20.0 Watts Relative All Phase Angles Pout = 40.0 Watts V Pin = 10.0 dBm, Pout = 40.0 W uS POLYFET RF DEVICES Pulse source: RFin REVISION 05/12/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MLCQ02 Pout/Gain vs Pin: Freq=20MHz, Vds=28V, Vagc=8V, Idq=1.4A 80.00 Pout/Gain vs Pin: Freq=250MHz, Vds=28V, Vagc=8V, Idq=1.4A 70.00 44.00 70.00 43.00 60.00 42.00 42.00 60.00 40.00 40.00 38.00 Pout 30.00 36.00 41.00 40.00 39.00 30.00 38.00 20.00 37.00 Pout 20.00 36.00 10.00 0.00 34.00 10.00 32.00 0.00 35.00 34.00 15.85 7.94 3.98 2.00 1.00 0.50 0.25 0.13 0.06 15.85 7.94 3.98 2.00 1.00 0.50 0.25 0.13 0.06 Pin in mW Pin in mW Pout/Gain vs Pin: Freq=512MHz, Vds=28V, Vagc=8V, Idq=1.4A Pout/Gain/Eff vs Vgs: Vds=28V, Pin=10dBm, Freq=20MHz 50 41.00 60.00 30.00% 40 37.00 Pout 36.00 20.00 35.00 10.00 34.00 0.00 25.00% 35 30 20.00% 25 15.00% 20 15 Efficeincy Gain 30.00 Gain in dB 38.00 Pout in W & Gain in dB 39.00 40.00 35.00% 45 40.00 50.00 Pout in Watts 40.00 Gain Gain in dB Gain 50.00 Pout in Watts 50.00 Gain in dB Pout in Watts 44.00 Pout Gain Efficeincy 10.00% 10 5.00% 33.00 15.85 7.94 3.98 2.00 1.00 0.50 0.25 0.13 0.06 5 0 0.00% 8 7.5 7 6.5 6 5.5 5 Pin in mW Vgs in V Pout/Gain/Eff vs Vgs: Vds=28V, Pin=10dBm, Freq=512MHz Pout/Gain/Eff vs Vgs: Vds=28V, Pin=10dBm, Freq=250MHz 60 25.00% 50 50 20.00% 15.00% 30 10.00% 20 10 30.00% 25.00% 40 20.00% 30 15.00% Pout Gain Efficeincy 20 10.00% 0.00% 8 7.5 8 7.5 7 6.5 6 5.5 5 7 0 6.5 0.00% 5.00% 6 10 5.5 5.00% 5 0 Pout Gain Efficeincy 35.00% Efficeincy 40 Efficeincy Pout in W & Gain in dB 60 30.00% Pout in W & Gain in dB 70 Vgs in V Vgs in V POLYFET RF DEVICES REVISION 05/12/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MLCQ02 Gain/Eff vs Freq: Vds=28V,Vagc=8V, Idq=1.4APout=40W 46.0 P1dBvsFreq: Vds=28V,Vagc=8V,Idq=1.4A 60.00 45.0% 45.0 42.0 50.00 35.0% 40.00 30.0% 41.0 25.0% 40.0 Eff in % Gain in dB 43.0 40.0% P1dB in W Efficiency 44.0 30.00 P1dB 20.00 39.0 20.0% 10.00 38.0 15.0% Gain 37.0 0.00 36.0 10.0% 20 100 200 300 400 20 510 50 100 150 200 250 300 350 400 450 510 FrequencyinMHz Frequency in MHz IMD vs Freq: Vds=28V, Vagc=8V, Idq=1.40A, PEP=40W Harmvs Freq: Vds=28V, Vagc=8, Idq=1.4A, Pout=40W -10.0 0.0 -15.0 -10.0 -25.0 2nd -30.0 3rd IMD in dBc Harm Atten in dBc -20.0 -20.0 IM3 -30.0 IM5 -35.0 -40.0 -40.0 -50.0 -45.0 -60.0 -50.0 20 50 100 150 200 250 300 350 400 450 510 20 50 100 150 200 250 300 350 400 450 510 Frequency in MHz Frequency in MHz POLYFET RF DEVICES REVISION 05/12/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com