SM401 - Polyfet

polyfet rf devices
SM401
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
135.0 Watts Single Ended
Package Style AM
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
270 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
o
0.65 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
15.0 A
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
70 V
20 V
RF CHARACTERISTICS ( 135.0 WATTS OUTPUT )
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
MAX
11
75
Load Mismatch Tolerance
20:1
UNITS TEST CONDITIONS
dB
Idq = 0.80 A, Vds =
28.0 V, F = 175 MHz
%
Idq = 0.80 A, Vds =
28.0 V, F = 175 MHz
Relative
Idq = 0.80 A, Vds = 28.0 V, F =
175 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
6.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
65
2
Ids = 120.00 mA, Vgs = 0V
Ids = 0.60 A, Vgs = Vds
7.2
Mho
Vds = 10V, Vgs = 5V
0.16
Ohm
Vgs = 20V, Ids =15.00 A
Vgs = 20V, Vds = 10V
Rdson
Saturation Resistance
Idsat
Saturation Current
42.00
Amp
Ciss
Common Source Input Capacitance
210.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
13.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
200.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
SM401
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
SM401 Pout vs Pin Freq=175MHz, Vds=28Vdc, Idq=.8A
14
160
S4A 1 DICE CAPACITANCE
1000
Coss
140
Pout
13
120
100
100
Ciss
12
80
11
60
10
Gain
[email protected] = 70%
Crss
40
10
20
0
1
9
0
2
4
6
8
10
12
14
16
18
0
20
2.5
5
7.5
10
12.5
IV CURVE
17.5
20
22.5
25
27.5
30
ID & GM VS VGS
S4A 1 DIE ID & GM Vs VG
S4A 1 DIE IV
100.00
Id in amps; Gm in mhos
45
40
35
30
ID IN AMPS
15
VDS IN VOLTS
Pin in Watts
25
20
15
10
Id
10.00
gM
5
1.00
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
14
VDS IN VOLTS vg=8v
Vg=6v
16
0
18
20
0
2
vg=12v
Zin Zout
4
6
8
10
Vgs in Volts
12
14
16
18
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com