SE701

polyfet rf devices
SE701
General Description
Silicon VDMOS transistor designed
specifically for Broadband RF
applications. Suitable for Military
Radios, Cellular Base Staions,
Broadcast FM/AM, MRI, Laser Drivers
and others.
"Polyfet" process features low
feedback and output capacitances,
resulting in high Ft transistors with
high input impedance and high
efficiency.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
45.0 Watts Push - Pull
Package Style AE
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
110 Watts
Maximum
Junction
Temperature
o
1.40 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain

Drain Efficiency
VSWR
TYP
6.5 A
Drain to
Source
Voltage
Gate to
Source
Voltage
+ 20 V
- 0V
70 V
70 V
45.0 WATTS OUTPUT )
MAX
10
50
Load Mismatch Tolerance
Drain to
Gate
Voltage
20:1
UNITS TEST CONDITIONS
dB
Idq = 0.40 A, Vds =
28.0 V, F = 500 MHz
%
Idq = 0.40 A, Vds =
28.0 V, F = 500 MHz
Relative
Idq = 0.40 A, Vds = 28.0 V, F =
500 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 10V
Vgs
Gate Bias for Drain Current
5
V
Ids = 0.10 A, Vgs = Vds
gM
Forward Transconductance
65
2
Ids = 20.00 mA, Vgs = 0V
1.2
Mho
Vds = 10V, Vgs = 5V
2.50 A
Rdson
Saturation Resistance
0.85
Ohm
Vgs = 20 V, Ids =
Idsat
Saturation Current
7.00
Amp
Vgs = 20 V, Vds = 10V
Ciss
Common Source Input Capacitance
50.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
3.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
32.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 03/10/2015
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
SE701
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
S1A 1 DIE CAPACITANCE
CAPACITANCE IN PFS
1000
Coss
100
Ciss
10
Crss
1
0
4
8
12
16
20
24
28
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
S1A 1 DIE IV
S1A 1 DIE ID & GM Vs VG
10.00
Id in amps; Gm in mhos
8
7
ID IN AMPS
6
5
4
3
2
Id
1.00
gM
1
0.10
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
14
VDS
IN VOLTS vg=8v
Vg=6v
16
0
18
20
0
2
vg=12v
4
6
8
10
Vgs in Volts
12
14
16
18
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 03/10/2015
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com