polyfet rf devices MKAL02 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 2 to 100 Mhz Gain = 50.0 dB Vdd = 28.0 Volts 50 ohms Input/Output Impedance Description The MKAL02 is a 100 Watt, high gain amplifier module covering a bandwidth of 2-100 Mhz. This compact module design is suitable for military applications in a rugged environment. An ALC pin is provided to control the output power, gain and blanking of the module. Absolute Maximum Ratings (T=25 oC) Parameter DC supply Voltage 1 DC supply Voltage 2 AGC Voltage Symbol VDD1 VDD2 VAGC Value AGC Current VAGCI 1.00 Input Power Output Power Operating Case Temp. Storage Temperature Pin Pout Tc Tstg 32.0 9.0 0.002 120.0 -40 to +85 -55 to +100 Unit V V V mA W W o C oC Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms, Vdd = 28.0 Volts, Idq = 1.4 Amps ) Parameter Frequency Range Outut Power Power Gain Total Efficiency 2nd Harmonics Intermod - 2 tone Load Mismatch Tolerance Vagc Voltage Symbol BW Po PG Pulse Responese Time Pr Min Max 100 100.0 50.0 h dso Im3 VSWR VAGC Typical 2 50 -30.00 -15.00 10:1 8.0 100.0 Unit Test Conditions Mhz 50 ohm load Watts Pin = 0.0 dbm Vagc = 8.0 V dB Pout =100.0 Watts Vagc = 8.0 V Pout =100.0 Watts % Pout =100.0 Watts @ dBc Mhz dBc AvePwr= 50.0 Watts Relative All Phase Angles Pout =100.0 Watts 0.0 dBm, Pout = 100.0 W V Pin = uS POLYFET RF DEVICES Pulse source: Vagc REVISION 04/05/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MKAL02 Pout/Gain vs Pin: Freq=1.6MHz, Vds=28V, Vagc=8V, Idq=1.4A Pout/Gain vs Pin: Freq=50MHz, Vds=28V, Vagc=8V, Idq=1.4A 120 120 60 59 100 100 57 57 54 Gain 40 Pout 40 60 Gain Gain in dB 51 Gain in dB 53 60 Pout in Watts 55 80 Pout in Watts 80 Pout 49 51 20 20 47 0 0.03 0.08 0.13 0.20 0.32 Pin in mW 0.50 0 0.03 45 1.26 0.79 0.08 0.13 0.20 0.32 0.50 0.79 48 1.26 Pin in mW Pout/Gain/Eff vs Vgs: Freq=1.6Mhz, Vds=28V, Pin=2dBm Pout/Gain vs Pin: Freq=100MHz, Vds=28V, Vagc=8V, Idq=1.4A 120 60 100 120 60% 100 50% 80 40% 60 30% 40 20% 20 10% Pout in Watts 54 Pout 40 Gain Efficeincy Gain in dB 60 Pout in W & Gain in dB 57 80 Pout Gain Efficeincy 51 20 0 0.03 0 4.5 48 0.08 0.13 0.20 0.32 0.50 0.79 1.26 0% 5 5.5 6 6.5 7 7.5 8 Vgs in V Pin in mW Pout/Gain/Eff vs Vgs: Freq=100MHz, Vds=28V, Pin=2dBm Pout/Gain/Eff vs Vgs: Freq=50MHz, Vds=28V, Pin=2dBm 120 70% 120 100 60% 100 80% 70% 30% 40 20% Gain Efficeincy Pout in W & Gain in dB 60 Pout 80 50% 40% 60 Efficeincy 40% Efficeincy Pout in W & Gain in dB 60% 50% 80 Pout Gain Efficeincy 30% 40 20% 20 0 4.5 10% 0% 5 5.5 6 6.5 7 7.5 8 20 10% 0 4.5 0% 5 5.5 Vgs in V POLYFET RF DEVICES 6 6.5 Vgs in V 7 7.5 8 REVISION 04/05/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MKAL02 Gain/Eff vs Freq: Vds=28V, Vagc=8V, Idq=1.4A, Pout=100W P1dB vs Freq: Vds=28V, Vagc=8V, Idq=1.4A 100% 60 66 58 90% 56 56 80% 54 Gain in dB 36 52 Gain 70% 50 60% 48 Eff in % P1dB in W 46 26 46 50% Efficiency 44 16 40% 42 6 1.6 5 10 20 30 40 50 60 70 80 90 40 1.6 100 5 10 20 Frequency in MHz 30 40 50 60 70 80 30% 100 90 Frequency in MHz IMD vs Freq: Vds=28V, Vagc=8V, Idq=1.4A, PEP=100W 100kHz seperation Harm vs Freq: Vds=28V, Vagc=8V, Idq=1.4A, Pout=100W 5 -15.0 0 -5 -20.0 -15 -25.0 -20 2nd 3rd -25 IMD in dBc Harm Atten in dBc -10 IM3 IM5 -30.0 -30 -35 -35.0 -40 -45 -40.0 1.6 10 20 30 40 50 60 70 80 90 100 1.6 10 20 Frequency in MHz 30 40 50 60 70 80 90 100 Frequency in MHz POLYFET RF DEVICES REVISION 04/05/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com