LQ801 - Polyfet

polyfet rf devices
LQ801
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER LDMOS TRANSISTOR
30.0 Watts Push - Pull
Package Style AQ
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
80 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
o
1.80 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
4.5 A
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
70 V
20 V
30.0 WATTS OUTPUT )
MAX
12
55
Load Mismatch Tolerance
Drain to
Gate
Voltage
10:1
UNITS TEST CONDITIONS
dB
Idq = 0.40 A, Vds =
28.0 V, F =1,000 MHz
%
Idq = 0.40 A, Vds =
28.0 V, F =1,000 MHz
Relative
Idq = 0.40 A, Vds = 28.0 V, F =1,000 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
1.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
65
2
Ids =
0.10 mA, Vgs = 0V
Ids = 0.10 A, Vgs = Vds
0.8
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistance
0.90
Ohm
Vgs = 20V, Ids = 2.50 A
Idsat
Saturation Current
5.50
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
30.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
1.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
15.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
LQ801
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
LQ801 POUT vs PIN F=1000 MHZ; IDQ=0.8A; VDS=28V
L2B 1 DICE CAPACITANCE
100
35
16.00
Pout
25
14.00
20
Gain
15
12.00
Efficiency = 55%
10
5
Coss
CAPACITANCE IN PFS
30
10
Ciss
Crss
10.00
0
0.5
1
1.5
PIN IN WATTS
2
2.5
1
3
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
L2B 1 DIE ID & GM Vs VG
L2B 1 DIE IV
10.00
Id in amps; Gm in mhos
6
5
ID IN AMPS
4
Id
1.00
3
2
1
gM
0.10
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
14
VDS
IN VOLTS vg=8v
Vg=6v
16
0
18
20
0
2
vg=12v
Zin Zout
4
6
8
10
Vgs in Volts
12
14
16
18
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com