polyfet rf devices MSCQ01 Power RF Amplifiers Power = 100.0 Watts Bandwidth = 30 to 512 Mhz Gain = 8.0 dB Vdd = 26.0 Volts 50 ohms Input/Output Impedance Description The MSCQ01 is a 100 Watt, single stage amplifier module covering a bandwidth of 30-512 Mhz. This compact module design is suitable for military applications in a rugged environment. An ALC pin is provided to control the output power, gain and blanking of the module. Absolute Maximum Ratings (T=25 oC) Parameter DC supply Voltage 1 DC supply Voltage 2 AGC Voltage Symbol VDD1 VDD2 VAGC Value AGC Current VAGCI 2.50 Input Power Output Power Operating Case Temp. Storage Temperature Pin Pout Tc Tstg 32.0 8.5 20.000 150.0 -40 to +85 -55 to +100 Unit V V V mA W W o C oC Electrical Characteristics: ( T=25 oC Zs=Zl=50 ohms, Vdd = 26.0 Volts, Idq = 1.5 Amps ) Parameter Frequency Range Outut Power Power Gain Total Efficiency 2nd Harmonics Intermod - 2 tone Load Mismatch Tolerance Vagc Voltage Symbol BW Po PG Pulse Responese Time Pr Min Max 512 100.0 8.0 h dso Im3 VSWR VAGC Typical 30 45 -25.00 5:1 8.0 40.0 Unit Test Conditions Mhz 50 ohm load Watts Pin = 42.0 dbm Vagc = 8.0 V dB Pout =100.0 Watts Vagc = 8.0 V Pout =100.0 Watts % Pout = 0.0 Watts @ dBc Mhz dBc AvePwr= 50.0 Watts Relative All Phase Angles Pout =100.0 Watts V Pin = 42.0 dBm, Pout = 100.0 W uS POLYFET RF DEVICES Pulse source: RFin REVISION 08/25/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MSCQ01 Pout/Gain vs Pin: Freq=225MHz, Vds=24Vdc, Idq=1.5A Pout/Gain vs Pin: Freq=30MHz, Vds=24Vdc, Idq=1.5A 140 17.0 140 16.0 16.0 120 15.0 130 120 Pout in Watts Gain in dB Pout 15.0 90 80 70 14.0 Gain 60 14.0 100 Gain in dB 100 Pout in Watts 110 Pout 13.0 80 12.0 60 11.0 50 13.0 40 Efficiency@100W = 53% 30 20 Efficiency@100W = 44% 40 10.0 Gain 12.0 20 11.0 0 9.0 10 0 0 1 2 3 4 5 Pin in Watts 6 7 8 8.0 0 9 1 2 3 4 5 6 7 Pin in Watts 8 9 10 11 12 Gain/Efficiency vs Freq: Vds=24Vdc, Idq=1.5A Pout/Gain vs Pin: Freq=512MHz, Vds=24Vdc, Idq=1.5A 110 11.0 20 100 100 Pout fixed at 100W 18 90 70 60 9.0 50 40 Efficiency@100W =55% 30 8.0 20 80 14 70 12 60 Gain 10 50 8 40 6 Gain 10 16 Efficiency (%) Pout Gain in dB 10.0 80 Gain in dB Pout in Watts 90 30 Efficiency 0 7.0 4 20 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Pin in Watts 70 120 170 220 270 320 370 420 470 20 520 Freq in MHz Gain/Efficiency vs Freq: Vds=26Vdc, Idq=1.5A 20 100 Pout fixed at 100W 90 16 80 14 70 12 60 Gain 10 50 8 40 6 Efficiency (%) Gain in dB 18 30 Efficiency 4 20 70 120 170 220 270 320 370 420 470 20 520 Freq in MHz POLYFET RF DEVICES REVISION 08/25/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com MSCQ01 IMD vs Idq: Vds=24Vdc, Freq=150MHz, 3rds 100KHz sep. -20 IMD vs Freq: Vds=24Vdc Idq=1.5A, PEP=100W 30-512MHz, 100KHz sep. -20 -23 -25 -25 -28 -30 PEP=50W -33 PEP=100W -35 dBc dBc -30 PEP=25W 3rd Order -35 -38 5th Order -40 -40 -43 -45 -48 -45 1 1.25 1.5 Idq (Amps) 1.75 2 -50 20 70 120 POLYFET RF DEVICES 170 220 270 320 Freq (MHz) 370 420 470 520 REVISION 08/25/2011 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 URL:www.polyfet.com