polyfet rf devices LP722 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 35.0 Watts Single Ended Package Style AP "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 150 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 1.00 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C RF CHARACTERISTICS ( SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP 15.0 A Drain to Source Voltage Gate to Source Voltage 36 V 36 V 20 V 35.0 WATTS OUTPUT ) MAX 10 55 Load Mismatch Tolerance Drain to Gate Voltage 10:1 UNITS TEST CONDITIONS dB Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz % Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz Relative Idq = 0.40 A, Vds = 12.5 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 4.0 mA Vds = 12.5 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 36 2 Ids = 0.40 mA, Vgs = 0V Ids = 0.40 A, Vgs = Vds 3.4 Mho Vds = 10V, Vgs = 5V 0.30 Ohm Vgs = 20V, Ids =12.00 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 26.00 Amp Ciss Common Source Input Capacitance 100.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 4.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 80.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LP722 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L1C 2DIE CAPACITANCE LP722 Pin vs Pout Freq=500MHz, Vds=12.5Vdc, Idq=.4A 45 13.00 1000 40 12.00 35 Coss Pout 11.00 30 100 Ciss 10.00 25 20 9.00 Gain 10 Efficiency @ P1dB = 57% 15 8.00 Crss 10 7.00 5 1 0 0 6.00 0 1 2 3 4 Pin in watts 5 6 7 5 10 8 15 20 25 30 VDS IN VOLTS IV CURVE ID & GM VS VGS L1C 2 DIE IV L1C 2 DIE ID, GM vs VG 100 30 25 I ID IN AMPS 20 10 15 10 GM 1 5 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 vg=10v vg=12v 0 2 Zin Zout 4 6 8 Vgs in Volts 10 12 14 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com