polyfet rf devices SK703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120.0 Watts Push - Pull Package Style AK "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 270 Watts Maximum Junction Temperature o 0.65 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 16.0 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 120.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 10 55 Load Mismatch Tolerance 20:1 UNITS TEST CONDITIONS dB Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz % Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz Relative Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 3.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 60.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 3.6 Mho Vds = 10V, Vgs = 5V 0.35 Ohm Vgs = 20V, Ids = 7.50 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 21.00 Amp Ciss Common Source Input Capacitance 150.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 9.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 96.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/16/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SK703 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE SK703 F=400MHZ, VDS=28V, Idq=.6A S1A 3 DICE CAPACITANCE 1000 140 13 120 Pout 110 12 100 Gain 90 80 11 Efficiency = 55% 70 Coss CAPACITANCE IN PFS 130 100 Ciss 10 Crss 60 50 10 2 4 6 8 PIN IN WATTS 10 1 12 0 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS S1A 3 DIE IV S1A 3 DIE ID & GM Vs VG 100.00 Id in amps; Gm in mhos 25 ID IN AMPS 20 15 10 5 Id 10.00 1.00 gM 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 12 Vgs in Volts 14 16 18 20 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 03/16/2010 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com