RJK1008DPP N-Channel Power MOSFET High-Speed Switching Use REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Features • VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID : 80 A Outline RENESAS Package code: PRSS0003AB-A (Package name : TO-220FN) 2 1. Gate 2. Drain 3. Source 1 1 2 3 3 Application • Motor control, Lighting control, Solenoid control, DC-DC converter, etc. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Value at Tc = 25°C 2. STch = 25°C, Tch ≤ 150°C, L = 100 µH REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Page 1 of 6 Symbol VDSS Ratings 100 Unit V VGSS ID ±20 80 160 V A A ID (pulse) IDR 80 A IDR (pulse) IAP Note2 Pch Note1 160 40 45 A A W θch-c Tch Tstg 2.78 150 –55 to +150 °C/W °C °C RJK1008DPP Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state voltage Symbol V(BR)DSS IDSS IGSS VGS(off) VDS(on) Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Page 2 of 6 RDS(on) Min 100 — — 2.0 — — Typ — — — 3.0 0.34 8.5 Max — 100 ±0.1 4.0 0.44 11 Unit V µA µA V V mΩ Ciss Coss Crss td(on) tr td(off) tf VDF trr — — — — — — — — — 5200 820 220 52 100 230 125 0.9 70 — — — — — — — 1.5 — pF pF pF ns ns ns ns V ns Test conditions ID = 1 mA, VGS = 0 VDS = 100 V, VGS = 0 VGS = ±20 V, VDS = 0 ID = 1 mA, VDS = 10 V Note3 ID = 40 A, VGS = 10 V Note3 ID = 40 A, VGS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V ID = 40 A VGS = 10 V RG = 25 Ω IF = 40 A, VGS = 0 IF = 80 A, VGS = 0 diF/dt = 100 A/µs RJK1008DPP Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 30 20 10 50 100 150 10 µs µs DC Operation (Tc = 25°C) 1 PW = 10 ms (1shot) 0.1 Operation in this 0.01 0.1 200 1 100 10 1000 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 100 10 V 7V 80 VDS = 10 V Pulse Test 4.4 V 60 40 VGS = 4.0 V 20 Drain Current ID (A) Drain Current ID (A) 0 area is limited by RDS(on) 0 80 60 40 Tc = 75°C 20 25°C −25°C Pulse Test 0 2 4 6 8 0 10 1 2 3 4 5 6 7 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source on State Resistance vs. Gate to Source Voltage Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 15 40 A 10 A 10 5 ID = 80 A 0 5 10 15 20 Gate to Source Voltage VGS (V) REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Page 3 of 6 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance RDS(on) (mΩ) 10 10 100 s Drain Current ID (A) 40 Ta = 25°C 1m Channel Dissipation Pch (W) 50 100 VGS = 10 V Pulse Test 10 1 1 10 Drain Current ID (A) 100 RJK1008DPP Forward Transfer Admittance vs. Drain Current VGS = 10 V Pulse Test 16 12 40 A ID = 80 A 10 A 8 4 0 −25 0 25 50 75 100 125 150 1000 10 75°C 1 VDS = 10 V Pulse Test 0.1 0.1 1 100 10 Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage ID (A) 10000 Capacitance C (pF) Ciss 1000 Coss Crss 100 di / dt = −100 A / µs VGS = 0, Ta = 25°C 1 10 VGS = 0 f = 1 MHz 10 0.1 100 1 10 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 16 VDD = 25 V 50 V 80 V VGS 120 12 VDS 8 40 4 VDD = 80 V 50 V 25 V 40 80 ID = 80 A 120 160 Gate Charge Qg (nC) REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Page 4 of 6 0 200 1000 Switching Time t (ns) 160 0 25°C Drain Current 100 80 Tc = −25°C 100 Case Temperature Tc (°C) 10 0.1 Drain to Source Voltage VDS (V) Forward Transfer Admittance |yfs| (S) 20 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source on State Resistance vs. Temperature VGS = 10 V, VDD = 50 V PW = 5 µs, duty ≤ 1 % RG = 25 Ω td(off) tf 100 tr td(on) 10 0.1 1 10 Drain Current ID (A) 100 RJK1008DPP Reverse Drain Current vs. Source to Drain Voltage Avalanche Current vs.Case Temperature 50 Pulse Test Avalanche Current IAP (A) Reverse Drain Current IDR (A) 100 10 V 80 5V 60 40 VGS = 0 V, -5 V 20 0 0.4 0.8 1.2 1.6 40 30 20 10 0 25 2.0 L = 100 µH Source to Drain Voltage VSD (V) 50 75 100 125 150 175 200 Case Temperature Tc (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 10.0 3 1 D=1 0.5 0.3 0.2 θch – c(t) = γs (t) • θch – c θch – c = 2.78°C/W, Tc = 25°C 0.1 0.1 0.05 0.02 0.03 PDM 0.01 T 1m 10 m Pulse Width 100 m 1 10 PW (s) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL 25 Ω Vin 10 V PW T PW 1shot pulse 0.01 100 µ D= Vin Vout VDD = 80 V 10% 90% td(on) REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Page 5 of 6 10% tr 10% 90% td(off) tf RJK1008DPP Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Ordering Information Part No. RJK1008DPP-00-T2 Quantity 50 pcs REJ03G1708-0100 Rev.1.00 Jul 03, 2008 Page 6 of 6 Shipping Container Magazine (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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