Pb Free Product NCE25GD135T http://www.ncepower.com NCE25GD135T 1350V, 25A, Trench NPT IGBT Features z z z z Trench NPT( Non Punch Through) IGBT High speed switching Low saturation voltage: VCE(sat)=2.0V@IC=25A High input impedance Applications z z Inductive heating, Microwave oven, Inverter, UPS, etc. Soft switching applications General Description Using advanced Trench NPT technology, NCE’s 1350V IGBTs offers superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications. Absolute Maximum Ratings Symbol Description Ratings Units VCES Collector to Emitter Voltage 1350 V VGES Gate to Emitter Voltage +/-30 V IC ICM(1) Continuous Collector Current @TC=25°C 50 A Continuous Collector Current @TC=100°C 25 A 90 A Pulsed Collector Current IF Diode Continuous Forward IFM Diode Maximum Forward PD Current @TC=100°C Current 25 150 A Maximum Power Dissipation @TC=25°C 312 W Maximum Power Dissipation @TC=100°C 125 W TJ Operating Junction Temperature -55 to +150 °C Tstg Storage Temperature Range -55 to +150 °C TL Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5seconds 300 °C Notes: 1. Repetitive rating, Pulse width limited by max. junction temperature Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 Pb Free Product NCE25GD135T http://www.ncepower.com Thermal Characteristics Symbol Parameter R JC RJA Typ. Max. Units Thermal Resistance, Junction to Case - 0.4 °C/W Thermal Resistance, Junction to Ambient - 40 °C/W Electrical Characteristics of the IGBT TC=25°C Symbol Parameter Off Characteristics BVCES Collector to Emitter Breakdown Voltage ICES Collector Cut-Off Current IGES G-E Leakage Current Test Conditions Min. Typ. Max. Units VGE=0V, Ic=1mA 1350 - - V VCE=1350V, VGE=0V - - 1 mA VGE=25V, VCE=0V - - +/-250 nA IC=25mA, VCE=VGE 4.0 5.5 7.0 V IC=25A, VGE=15V TC=25°C - 2 2.5 V IC=25A, VGE=15V TC=125°C - 2.15 - V - 3700 - pF - 130 - pF - 80 - pF - 50 - ns - 60 90 ns - 190 - ns - 100 180 ns - 4.1 6.2 mJ - 0.96 1.5 mJ On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VCE=30V, VGE=0V, f=1MHz Switching Characteristics td(on) tr td(off) tf Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VCC=600V,IC=25A, RG=10Ώ,VGE=15V, Inductive Load, TC=25°C Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss - 5.06 7.7 mJ td(on) Turn-On Delay Time - 50 - ns - 60 - ns - 200 - ns - 154 - ns - 4.3 6.9 mJ - 1.5 2.4 mJ - 5.8 9.3 mJ - 200 300 nC - 15 23 nC - 100 150 nC tr td(off) tf Rise Time Turn-Off Delay Time Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Ets Total Switching Loss Qg Total Gate Charge Qge Gate to Emitter Charge Qgc Gate to Collector Charge Wuxi NCE Power Semiconductor Co., Ltd VCC=600V,IC=25A, RG=10Ώ,VGE=15V, Inductive Load, TC=125°C VCC=600V,IC=25A, VGE=15V Page 2 v1.0 Pb Free Product NCE25GD135T http://www.ncepower.com Electrical Characteristics of Diode TC=25°C Symbol Parameter VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge Wuxi NCE Power Semiconductor Co., Ltd Test Conditions IF=25A IF=25A, dI/dt=200A/us Min. Typ. Max. Units TC=25°C - 2.0 V TC=125°C - 2.1 TC=25°C - 235 TC=125°C - 300 TC=25°C - 27 TC=125°C - 31 TC=25°C - 3130 TC=125°C - 4650 Page 3 3.0 V 350 ns ns 40 A A 4700 uC uC v1.0 Pb Free Product NCE25GD135T http://www.ncepower.com Typical Performance Characteristics Figure 2. Typical Saturation Voltage Characteristics Collector Current, IC(A) Collector Current IC, (A) Figure 1. Typical Output Characteristics Collector Emitter Voltage, VCE(V) Figure 4. Saturation Voltage vs. VGE Collector Emitter Voltage, Vce(V) Collector Emitter Voltage, Vce(V) Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level Collector Emitter Voltage, VCE(V) Case temperature, Tc(°C) Figure 6. Saturation Voltage vs. VGE Collector Emitter Voltage, Vce(V) Collector Emitter Voltage, Vce(V) Figure 5. Saturation Voltage vs. VGE Gate Emitter Voltage, VGE( V) Gate Emitter Voltage, VGE( V) Wuxi NCE Power Semiconductor Co., Ltd Gate Emitter Voltage, VGE( V) Page 4 v1.0 Pb Free Product NCE25GD135T http://www.ncepower.com Typical Performance Characteristics (Continued) Figure 8. Turn-on Characteristics vs. Gate Resistance Capacitance (pF) Switching Time (ns) Figure 7. Capacitance Characteristics Gate Resistance, RG (Ω) Collector Emitter Voltage, VCE(V) Figure 10. Switching Loss vs. Gate Resistance Switching Time (ns) Switching Loss (mJ) Figure 9. Turn-off Characteristics vs. Gate Resistance Gate Resistance, RG (Ω) Gate Resistance, RG (Ω) Switching Loss (mJ) Figure 12. Turn-Off Characteristics vs. Collector Current Switching Loss (mJ) Figure 11. Turn-on Characteristics vs. Collector Current Collector Current, IC (A) Collector Current, IC (A) Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 Pb Free Product NCE25GD135T http://www.ncepower.com Typical Performance Characteristics (Continued) Figure14. Gate Charge Characteristics Switching Loss (mJ) Gate-Emitter Voltage (V) Figure 13. Switching Loss vs. Collector Current Collector Current, IC (A) Collector Current, IC(A) Figure 16. Turn-Off SOA Collector Current, IC(A) Figure 15. SOA Characteristics Gate Charge, Qg (nC) Collector Emitter Voltage, (V) Collector Emitter Voltage, (V) Figure 17. Transient Thermal Impedance of IGBT Wuxi NCE Power Semiconductor Co., Ltd Page 6 v1.0 Pb Free Product NCE25GD135T http://www.ncepower.com TO-247 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500 REF 0.138 REF E2 3.600 REF 0.142 REF L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Φ 7.100 7.300 0.280 0.287 e 5.450 TYP 0.215 TYP H 5.980 REF 0.235 REF Wuxi NCE Power Semiconductor Co., Ltd Page 7 v1.0 Pb Free Product NCE25GD135T http://www.ncepower.com ATTENTION: ■ Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications. ■ NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein. ■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use. ■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice. Wuxi NCE Power Semiconductor Co., Ltd Page 8 v1.0