NCE70R180,NCE70R180F

NCE70R180,NCE70R180F
N-Channel Super Junction Power MOSFET II
General Description
The series of devices use advanced super junction
VDS
700
V
technology and design to provide excellent RDS(ON) with low
RDS(ON) TYP.
165
mΩ
gate charge. This super junction MOSFET fits the industry’s
ID
21
A
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
●
Power factor correction（PFC）
●
Switched mode power supplies(SMPS)
●
Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE70R180
TO-220
NCE70R180
NCE70R180F
TO-220F
NCE70R180F
TO-220
Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
ID (DC)
(Note 1)
IDM (pluse)
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
PD
TO-220F
Table 1.
Derate above 25°C
(Note 2)
Single pulse avalanche energy
(Note 1)
Avalanche current
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
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Page 1
NCE70R180
NCE70R180F
Unit
700
V
±30
V
21
21*
A
13.2
13.2*
A
63
63*
A
200
34
W
1.6
0.27
W/°C
EAS
690
mJ
IAR
7
A
EAR
1
mJ
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NCE70R180,NCE70R180F
Parameter
Symbol
dv/dt
Drain Source voltage slope, VDS ≤480 V,
50
Unit
V/ns
dv/dt
15
V/ns
TJ,TSTG
-55...+150
°C
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
NCE70R180
NCE70R180F
* limited by maximum junction temperature
Table 2.
Thermal Characteristic
Parameter
Symbol
NCE70R180
NCE70R180F
Unit
Thermal Resistance，Junction-to-Case（Maximum）
RthJC
0.62
3.67
°C /W
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJA
62.5
80
°C /W
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=700V,VGS=0V
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
Gate-Body Leakage Current
700
V
0.05
1
μA
VDS=700V,VGS=0V
100
μA
IGSS
VGS=±30V,VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
3
3.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=10.5A
165
190
mΩ
Forward Transconductance
gFS
VDS = 20V, ID = 10.5A
17.5
S
Input Capacitance
Clss
1950
PF
Output Capacitance
Coss
150
PF
Reverse Transfer Capacitance
Crss
5
PF
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Intrinsic gate resistance
RG
2.5
Dynamic Characteristics
VDS=50V,VGS=0V,
F=1.0MHz
VDS=480V,ID=21A,
VGS=10V
f = 1 MHz open drain
45
70
nC
9
nC
18
nC
1
Ω
11
nS
nS
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=380V,ID=11A,
6
td(off)
RG=4Ω,VGS=10V
61
100
nS
4.5
12
nS
21
A
63
A
1.3
V
Turn-Off Delay Time
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
ISD
Pulsed Source-drain current(Body Diode)
ISDM
Forward on voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Peak Reverse Recovery Current
Irrm
TC=25°C
Tj=25°C,ISD=21A,VGS=0V
Tj=25°C,IF=21A,di/dt=100A/μs
0.9
310
nS
5
uC
28
A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
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NCE70R180,NCE70R180F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for TO-220
Figure2. Safe operating area for TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure5. Transfer characteristics
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Figure4. Output characteristics
Figure6. Static drain-source on resistance
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NCE70R180,NCE70R180F
Figure7. RDS(ON) vs Junction Temperature
Figure8. BVDSS vs Junction Temperature
Figure9. Maximum ID vs Junction Temperature
Figure11. Capacitance
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Figure10. Gate charge waveforms
Figure12. Transient Thermal Impedance for TO-220
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NCE70R180,NCE70R180F
Figure13. Transient Thermal Impedance for TO-220F
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NCE70R180,NCE70R180F
Test circuit 1）Gate charge test circuit & Waveform
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
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NCE70R180,NCE70R180F
TO-220-3L-C Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
4.400
4.600
0.173
0.181
A1
2.250
2.550
0.089
0.100
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.330
0.650
0.013
0.026
c1
1.200
1.400
0.047
0.055
D
9.910
10.250
0.390
0.404
E
8.9500
9.750
0.352
0.384
E1
12.650
12.950
0.498
0.510
e
2.540 TYP.
0.100 TYP.
e1
4.980
5.180
0.196
0.204
F
2.650
2.950
0.104
0.116
H
7.900
8.100
0.311
0.319
h
0.000
0.300
0.000
0.012
L
12.900
13.400
0.508
0.528
L1
2.850
3.250
0.112
0.128
V
Φ
7.500 REF.
3.400
Wuxi NCE Power Semiconductor Co., Ltd
0.295 REF.
3.800
Page 7
0.134
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0.150
v1.0
NCE70R180,NCE70R180F
TO-220F Package Information
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NCE70R180,NCE70R180F
ATTENTION:
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Any and all NCE products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
NCE representative nearest you before using any NCE products described or contained herein in such applications.
NCE assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all NCE products described or contained herein.
Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE products(including technical data, services) described or contained herein are controlled
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photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE Power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product
that you intend to use.
This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.
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