NCE7560K

NCE7560K
http://www.ncepower.com
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
Product Summary
The NCE7560K uses advanced trench technology and
BVDSS
typ.
84
V
design to provide excellent RDS(ON) with low gate
RDS(ON)
typ.
6.8
mΩ
max.
8.5
mΩ
60
A
charge. It can be used in a wide variety of applications.
ID
Features
● VDS=75V;ID=60A@ VGS=10V;
100% UIS TESTED!
RDS(ON)<8.5mΩ @ VGS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Application
●
Power switching application
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE7560K
NCE7560K
TO-252-2L
-
-
-
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Value
Unit
Drain-Source Voltage (VGS=0V)
VDS
75
V
Gate-Source Voltage (VDS=0V)
VGS
±20
V
Drain Current (DC) at Tc=25℃
ID (DC)
60
A
ID (DC)
42
A
IDM (pluse)
310
A
dv/dt
30
V/ns
PD
140
W
0.95
W/℃
EAS
300
mJ
TJ,TSTG
-55 To 175
℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy
(Note 2)
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:Tj=25℃,VDD=37.5V,VG=10V,L=0.5mH
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1
NCE7560K
http://www.ncepower.com
Pb-Free Product
Table 2. Thermal Characteristic
Parameter
Symbol
Value
Unit
Thermal Resistance,Junction-to-Case(Maximum)
RthJC
1.05
℃/W
Thermal Resistance,Junction-to-Ambient (Maximum)
RthJA
50
℃/W
Table 3. Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
BVDSS
VGS=0V ID=250μA
75
84
-
V
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=75V,VGS=0V
-
-
1
μA
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=75V,VGS=0V
-
-
10
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
3
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
-
6.8
8.5
mΩ
Forward Transconductance
gFS
VDS=5V,ID=30A
66
-
S
Input Capacitance
Clss
4400
-
PF
Output Capacitance
Coss
340
-
PF
Reverse Transfer Capacitance
Crss
260
-
PF
Total Gate Charge
Qg
100
-
nC
Gate-Source Charge
Qgs
20
-
nC
Gate-Drain Charge
Qgd
30
-
nC
-
17.8
-
nS
On/off states
Drain-Source Breakdown Voltage
Dynamic Characteristics
VDS=25V,VGS=0V,
F=1.0MHz
VDS=30V,ID=30A,
VGS=10V
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=30V,ID=2A,RL=15Ω
-
11.8
-
nS
td(off)
VGS=10V,RG=2.5Ω
-
56
-
nS
tf
-
14.6
-
nS
Source-drain current(Body Diode)
ISD
-
-
80
A
Pulsed Source-drain current(Body Diode)
ISDM
-
-
320
A
-
-
1.2
V
-
-
36
nS
-
-
56
nC
Turn-Off Delay Time
Turn-Off Fall Time
Source- Drain Diode Characteristics
(Note 1)
Tj=25℃,ISD=30A,VGS=0V
VSD
Forward on voltage
(Note 1)
Reverse Recovery Time
(Note 1)
trr
Reverse Recovery Charge
Qrr
Forward Turn-on Time
ton
Tj=25℃,IF=75A,di/dt=100A/μs
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes
1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting Tj=25℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.1
NCE7560K
http://www.ncepower.com
Pb-Free Product
Test Circuit
1) EAS test circuit
2) Gate charge test circuit
3) Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.1
NCE7560K
http://www.ncepower.com
Pb-Free Product
Typical Electrical and Thermal Characteristics (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 4
Figure6. RDS(ON) vs Junction Temperature
v1.1
NCE7560K
http://www.ncepower.com
Pb-Free Product
Figure7. BVDSS vs Junction Temperature
Figure8. VGS(th) vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.1
NCE7560K
http://www.ncepower.com
Pb-Free Product
TO-252 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
2.200
2.400
0.087
0.094
A1
0.000
0.127
0.000
0.005
b
0.660
0.860
0.026
0.034
c
0.460
0.580
0.018
0.023
D
6.500
6.700
0.256
0.264
D1
5.100
5.460
0.201
0.215
D2
0.483 TYP.
0.190 TYP.
E
6.000
6.200
0.236
0.244
e
2.186
2.386
0.086
0.094
L
9.800
10.400
0.386
0.409
L1
L2
2.900 TYP.
1.400
L3
0.114 TYP.
1.700
0.055
1.600 TYP.
0.067
0.063 TYP.
L4
0.600
1.000
0.024
0.039
Φ
1.100
1.300
0.043
0.051
θ
0°
8°
0°
8°
h
0.000
0.300
0.000
0.012
V
Wuxi NCE Power Semiconductor Co., Ltd
5.350 TYP.
Page 6
0.211 TYP.
v1.1
NCE7560K
http://www.ncepower.com
Pb-Free Product
Attention
■
■
■
■
■
■
■
■
■
Any and all NCE products described or contained herein do not have specifications that can handle applications that require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure
can be reasonably expected to result in serious physical and/or material damage. Consult with your
NCE representative nearest you before using any NCE products described or contained herein in such applications.
NCE assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all NCE products described or contained herein.
Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and
functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and
functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that
cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
In the event that any or all NCE products(including technical data, services) described or contained herein are controlled
under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission
of NCE Power Semiconductor CO.,LTD.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its
use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product
that you intend to use.
This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
Page 7
v1.1