NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCE5520Q
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE5520Q uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =55V,ID =20A
Schematic diagram
RDS(ON) < 22mΩ @ VGS=10V (Typ:19mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
Pin assignment
Application
● Industrial power supplies
● LED backlighting
DFN3X3 EP top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE5520Q
NCE5520Q
DFN3X3EP
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
55
V
Gate-Source Voltage
VGS
±20
V
ID
20
A
ID (100℃)
14
A
Pulsed Drain Current
IDM
60
A
Maximum Power Dissipation
PD
35
W
0.23
W/℃
TJ,TSTG
-55 To 150
℃
RθJC
3.6
℃/W
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
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Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
55
Zero Gate Voltage Drain Current
IDSS
VDS=55V,VGS=0V
-
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
VGS(th)
RDS(ON)
Typ
Max
Unit
-
V
-
1
μA
-
-
±100
nA
VDS=VGS,ID=250μA
2
3
4
V
VGS=10V, ID=10A
-
19
22
mΩ
-
1340
-
PF
-
123
-
PF
-
10
-
PF
-
6
-
nS
Off Characteristics
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=25V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=25V,ID=2A,
-
2.5
-
nS
td(off)
RL=3Ω,RG=3Ω
-
22
-
nS
-
2.5
-
nS
-
21
-
nC
-
5
-
nC
-
3
-
nC
-
-
1.2
V
-
-
20
A
TJ = 25°C, IF =10A
-
16
nS
(Note3)
-
38
nC
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=25V,ID=10A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
Reverse Recovery Time
VSD
VGS=0V,IS=20A
IS
trr
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition: Tj=25℃,VDD=25V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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NCE5520Q
Test circuit
1) EAS test Circuits
2) Gate charge test Circuit
3) Switch Time Test Circuit
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance(mΩ)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Wuxi NCE Power Semiconductor Co., Ltd
Figure 6 Source- Drain Diode Forward
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NCE5520Q
C Capacitance (pF)
Power Dissipation (W)
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TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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NCE5520Q
DFN3X3 EP Package Information
Wuxi NCE Power Semiconductor Co., Ltd
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NCE5520Q
Attention:
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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