NCE N-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCE30P50G
http://www.ncepower.com
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE30P50G uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =-30V,ID =-50A
RDS(ON) < 5.5mΩ @ VGS=-10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Marking and pin assignment
Application
● Battery and loading switching
100% UIS TESTED!
DFN 5x6 EP top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCE30P50G
NCE30P50G
DFN 5x6 EP
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
Unit
-30
V
±20
V
Drain Current-Continuous
ID
-50
A
Pulsed Drain Current
IDM
-70
A
Maximum Power Dissipation
PD
35
W
0. 28
W/℃
EAS
300
mJ
TJ,TSTG
-55 To 150
℃
RθJC
3.6
℃/W
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
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Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1
-1.5
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-10A
-
4.4
7
mΩ
gFS
VDS=-10V,ID=-15A
-
20
-
S
-
3590
-
PF
-
695
-
PF
-
665
-
PF
-
13
-
nS
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
VDS=-15V,VGS=0V,
F=1.0MHz
Crss
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-15V,ID=-10A
-
12
-
nS
td(off)
VGS=-10V,RGEN=6Ω
-
50
-
nS
-
14
-
nS
-
84
-
nC
-
11.7
-
nC
-
25
-
nC
-
-0.85
-1.2
V
-
-
-50
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-15V,ID=-10A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
VGS=0V,IS=-10A
IS
trr
TJ = 25°C, IF = -10A
-
-
45
nS
Reverse Recovery Charge
Qrr
di/dt = 100A/μs(Note3)
-
-
43
nC
Forward Turn-On Time
ton
Reverse Recovery Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,VDD=-15V,VG=-10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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NCE30P50G
Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Vgs Gate-Source Voltage (V)
Figure 5 Gate Charge
Rdson On-Resistance (mΩ)
Is- Reverse Drain Current (A)
Figure 2 Transfer Characteristics
ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
Wuxi NCE Power Semiconductor Co., Ltd
Figure 6 Source- Drain Diode Forward
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NCE30P50G
Normalized BVdss
Capacitance (pF)
http://www.ncepower.com
TJ-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 BVDSS vs Junction Temperature
ID- Drain Current (A)
ID- Drain Current (A)
Vds Drain-Source Voltage (V)
TJ-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 ID Current Derating vs Junction
Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Vds Drain-Source Voltage (V)
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE30P50G
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DFN5X6-8L Package Information
Symbol
A
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
0.900
1.000
0.035
0.039
A3
0.254REF.
0.010REF.
D
4.944
5.096
0.195
0.201
E
5.974
6.126
0.235
0.241
D1
3.910
4.110
0.154
0.162
E1
3.375
3.575
0.133
0.141
D2
4.824
4.976
0.190
0.196
E2
5.674
5.826
0.223
0.229
K
1.190
1.390
0.047
0.055
b
0.035
0.450
0.014
0.018
e
1.270(TYP.)
0.050(TYP.)
L
0.559
0.711
0.022
0.028
L1
0.424
0.576
0.017
0.023
H
0.574
0.726
0.023
0.029
θ
8°
12°
8°
12°
Wuxi NCE Power Semiconductor Co., Ltd
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NCE30P50G
Attention
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Any and all NCE power products described or contained herein do not have specifications that can handle applications that
require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE power representative nearest you before using any NCE power products described or contained herein in
such applications.
NCE power assumes no responsibility for equipment failures that result from using products at values
that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)
listed in products specifications of any and all NCE power products described or contained herein.
Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,
and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states
that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’s products or equipment.
NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could
cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or
events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe
design, redundant design, and structural design.
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Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power
product that you intend to use.
This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.
Wuxi NCE Power Semiconductor Co., Ltd
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