RENESAS HAT1035R

HAT1035R
Silicon P Channel Power MOS FET
High Speed Power Switching
REJ03G0845-0100
Rev.1.00
Apr.22,2005
Features
•
•
•
•
Low on-resistance
Capable of –4 V gate drive
Low drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8
7
7 8
D D
5 6
D D
65
1
4
23
2
G
4
G
S1
MOS1
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
S3
MOS2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Channel dissipation
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
Note3
Ratings
–150
±15
–0.25
–1
–0.25
1
Channel dissipation
Pch
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
Rev.1.00 Apr. 22, 2005 page 1 of 3
Unit
V
V
A
A
A
W
W
°C
°C
HAT1035R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
Drain to Source breakdown
voltage
Gate to Source breakdown voltage V(BR)GSS
Gate to Source leak current
IGSS
Zero Gate voltage Drain current
IDSS
Gate to Source cutoff voltage
VGS(off)
RDS(on)
Static Drain to Source on state
resistance
RDS(on)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–Drain diode forward voltage
Body–Drain diode reverse
recovery time
Notes: 4. Pulse test
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Rev.1.00 Apr. 22, 2005, 2004 page 2 of 3
Min
–150
Typ
—
Max
—
Unit
V
Test Conditions
ID = –10 mA, VGS = 0
±15
—
—
–1.0
—
—
—
0.29
—
—
—
—
—
—
—
—
—
—
—
5.0
6.0
7.0
0.45
92
37
10
10
13
22
15
—
±10
–5
–2.0
6.2
7.5
10.0
—
—
—
—
—
—
—
—
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
IG = ±100 µA, VDS = 0
VGS = ±12 V, VDS = 0
VDS = –150 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –0.25 A, VGS = –10 VNote4
ID = –0.25 A, VGS = –4 V Note4
ID = –1 A, VGS = –5 V Note4
ID = –0.25 A, VDS = –10 V Note4
—
—
–0.9
80
–1.4
—
V
ns
IF = –0.25 A, VGS = 0 Note4
VDS = –10 V
VGS = 0
f = 1 MHz
VGS = –5 V, ID = –0.25 A,
VDD ≅ –30 V
IF = –0.25 A, VGS = 0
diF/ dt = 50 A/µs
HAT1035R
Package Dimensions
RENESAS Code
PRSP0008DD-D
Package Name
FP-8DAV
MASS[Typ.]
0.085g
F
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
*1 D
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
HAT1035R-EL-E
Quantity
2500 pcs.
Shipping Container
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00 Apr. 22, 2005, 2004 page 3 of 3
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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