RENESAS RJP60D0DPK-00-T0

Preliminary Datasheet
RJP60D0DPK
Silicon N Channel IGBT
High Speed Power Switching
R07DS0166EJ0300
Rev.3.00
Jul 13, 2011
Features
 Short circuit withstand time (5 s typ.)
 Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)
 Gate to emitter voltage rating 30 V
 Pb-free lead plating and chip bonding
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
1. Gate
2. Collector
3. Emitter
G
1
2
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
PC Note2
j-c Note2
Tj
Tstg
Ratings
600
±30
45
22
90
140
0.89
150
–55 to +150
Unit
V
V
A
A
A
W
°C/ W
°C
°C
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tc = 25C
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
Page 1 of 6
RJP60D0DPK
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reveres transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Switching time
Short circuit withstand time
Symbol
ICES
IGES
VGE(off)
VCE(sat)
VCE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
tsc
Min
—
—
4.0
—
—
—
—
—
—
—
—
—
—
—
—
3.0
Typ
—
—
—
1.6
2.0
1050
70
32
45
6
20
35
20
90
70
5.0
Max
5
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
s
Test Conditions
VCE = 600 V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10 V, IC = 1 mA
IC = 22 A, VGE = 15 V Note3
IC = 45 A, VGE = 15 V Note3
VCE = 20 V
VGE = 0
f = 1 MHz
VGE = 15 V
VCE = 300 V
IC = 22 A
VCC = 300 V, VGE = 15 V
IC = 22 A
Rg = 5 
Inductive load)
VCC  360 V, VGE = 15 V
Notes: 3. Pulse test
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
Page 2 of 6
RJP60D0DPK
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
Maximum DC Collector Current vs.
Case Temperature
50
Collector Current IC (A)
Collector Dissipation Pc (W)
200
160
120
80
40
0
25
50
75
20
10
100 125 150 175
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
Turn-off SOA
100
100
PW
10
0μ
=
10
s
Collector Current IC (A)
1000
μs
10
1
0.1
1
80
60
40
20
Tc = 25°C
Single pulse
0
10
100
1000
0
200
400
600
800
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
Typical Output Characteristics
Pulse Test
Ta = 25°C
80
Pulse Test
Ta = 150°C
12 V
80
Collector Current IC (A)
Collector Current IC (A)
30
0
0
Collector Current IC (A)
40
10 V
15 V
60
18 V
40
VGE = 8 V
20
0
12 V
15 V
10 V
60
18 V
40
VGE = 8 V
20
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Page 3 of 6
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
8
Ta = 25°C
Pulse Test
6
IC = 22 A
4
45 A
2
0
0
4
8
12
16
20
Collector to Emitter Satularion Voltage
VCE(sat) (V)
Collector to Emitter Satularion Voltage
VCE(sat) (V)
RJP60D0DPK
8
Ta = 150°C
Pulse Test
6
IC = 22 A
4
45 A
2
0
0
8
12
20
16
Gate to Emitter Voltage VGE (V)
Switching Caracteristics (Typical) (1)
Switching Caracteristics (Typical) (2)
100
Swithing Energy Losses E (μJ)
10000
td(off)
tf
td(on)
10
tr
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
1
1
VCC = 300 V, VGE = 15 V
Rg = 5 Ω, Ta = 25°C
1000
Eoff
100
Eon
10
10
100
1
1000
Swithing Energy Losses E (μJ)
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25°C
100
td(off)
td(on)
tf
tr
Eoff
Eon
100
VCC = 300 V, VGE = 15 V
IC = 22 A, Ta = 25°C
10
10
2
5
10
20
Gate Registance Rg (Ω)
(Inductive load)
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
100
Switching Caracteristics (Typical) (4)
Switching Caracteristics (Typical) (3)
1000
10
Collector Current IC (A)
(Inductive load)
Collector Current IC (A)
(Inductive load)
Switching Times t (ns)
4
Gate to Emitter Voltage VGE (V)
1000
Switching Times t (ns)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
50
2
5
10
20
50
Gate Registance Rg (Ω)
(Inductive load)
Page 4 of 6
RJP60D0DPK
Preliminary
Transfer Characteristics (Typical)
Collector Current IC (A)
80
Ta = 25°C
60
150°C
40
20
VCE = 10 V
Pulse Test
0
0
4
8
12
16
Gate to Emitter Voltage VGE (V)
Thermal Impedance θch – c (°C/W)
Thermal Impedance vs. Pulse Width
10
1
0.1
Tc = 25°C
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
90%
Diode clamp/
D.U.T
Vin
L
10%
90%
Rg
D.U.T/
Driver
VCC
Ic
tr
ton
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
10%
10%
td(on)
90%
td(off)
tf
toff
Page 5 of 6
RJP60D0DPK
Preliminary
Package Dimension
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Ordering Part No.
RJP60D0DPK-00-T0
R07DS0166EJ0300 Rev.3.00
Jul 13, 2011
Quantity
360 pcs
Shipping Container
Box (Tube)
Page 6 of 6
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