Ordering number : EN3582A 2SA1768 Bipolar Transistor –180V, –160A, Low VCE(sat) PNP Single NMP http://onsemi.com Applicaitons • Color TV sound output, converter, inverter Features • • • Adoption of MBIT process High breakdown voltage, large current capacity Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings --180 V --160 V VEBO IC --6 V --0.7 A ICP PC Collector Dissipation Unit VCBO VCEO Junction Temperature Tj Storage Temperature Tstg --1.5 A 1 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7540-001 • Package : NMP(Taping) • JEITA, JEDEC : SC-71 • Minimum Packing Quantity : 2,500 pcs./box 2.5 6.9 1.05 2SA1768S-AN 2SA1768T-AN Marking(NMP(Taping)) A1768 1.0 4.5 1.0 1.45 RANK LOT No. 0.6 1.0 0.5 15.0 0.9 1 2 3 0.45 Electrical Connection 2 2.54 2.54 1 : Emitter 2 : Collector 3 : Base 3 NMP(Taping) 1 Semiconductor Components Industries, LLC, 2013 August, 2013 82212 TKIM TC-00002804/90503TN (KT)/83098HA (KT)/5110MO, TS No.3582-1/7 2SA1768 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO VCB=--120V, IE=0A VEB=--4V, IC=0A hFE1 VCE=--5V, IC=--100mA VCE=--5V, IC=--10mA hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Conditions Ratings min typ max 140* Unit --0.1 μA --0.1 μA 400* 90 VCE=--10V, IC=--50mA 120 VCB=--10V, f=1MHz MHz 11 VCE(sat) VBE(sat) IC=--250mA, IB=--25mA V(BR)CBO V(BR)CEO IC=--10μA, IE=0A IC=--1mA, RBE=∞ V(BR)EBO ton IE=--10μA, IC=0A tstg tf See specified Test Circuit. pF --0.2 --0.5 --0.85 --1.2 V V --180 V --160 V --6 V 60 ns 900 ns 60 ns * : The 2SA1768 is classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit 2SA1768 IB1 IB2 PW=20μs D.C.≤1% OUTPUT INPUT VR RB + 50Ω 100μF VBE=5V RL + 470μF VCC= --100V IC=20IB1= --20IB2= --300mA Ordering Information Package Shipping 2SA1768S-AN Device NMP(Taping) 2,500pcs./box 2SA1768T-AN NMP(Taping) 2,500pcs./box memo Pb Free No.3582-2/7 2SA1768 IC -- VCE --500 --700 Collector Current, IC -- mA Collector Current, IC -- mA --600 A --120m A --100m --80mA --60mA --40mA --400 --20mA --300 --200 --100 mA --4.5 mA --4.0 mA --3.5 mA --3.0 --2.5mA 0m A From top --200mA --180mA --160mA --140mA --700 IC -- VCE --800 --600 --5 . --800 --500 --400 --2.0mA --300 --1.5mA --1.0mA --200 --0.5mA --100 IB=0 0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE -- mV 0 --10 --20 --40 --50 --60 --70 --80 IT04538 hFE -- IC 5 VCE=--5V VCE=--5V Ta=75°C 3 2 DC Current Gain, hFE --800 --600 --400 Ta= 75° 25°C C --25°C Collector Current, IC -- mA --30 Collector-to-Emitter Voltage, VCE -- V IT04536 IC -- VBE --1000 IB=0 0 --1000 --200 100 --25°C 25°C 7 5 3 2 10 7 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 2 3 5 7 --10 3 5 7 --100 2 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 7--1000 IT04542 VCE(sat) -- IC 2 3 2 Collector Current, IC -- mA IT04540 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz 5 --1.0 --1.2 IC / IB=10 --1000 2 VCE=--10V --5V 100 7 5 3 2 7 5 3 2 °C 25 --100 7 Ta=75°C 5 --25°C 3 10 5 7 --10 2 3 5 7 --100 2 3 5 Collector Current, IC -- mA 3 2 --1.0 Ta=--25°C 7 5 75°C 25°C 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT04546 Cob -- VCB f=1MHz 7 Output Capacitance, Cob -- pF 5 3 100 IC / IB=10 7 2 Collector Current, IC -- mA VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 --1.0 7 --1000 IT04544 5 3 2 10 7 5 3 2 3 2 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT04548 1.0 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 IT04550 Collector-to-Base Voltage, VCB -- V No.3582-3/7 2SA1768 --1.0 7 5 ASO ICP= --1.5A IC= --0.7A 10 0m 10 1m m s s s 3 2 DC --0.1 7 5 op era tio n 3 2 --0.01 7 5 PC -- Ta 1.2 Collector Dissipation, PC -- W Collector Current, IC -- A 3 2 Ta=25°C Single Pulse 3 --1.0 2 3 1.0 0.8 0.6 0.4 0.2 0 5 7 --10 2 3 5 7 --100 Collector-to-Emitter Voltage, VCE -- V 2 3 IT04551 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT04552 No.3582-4/7 2SA1768 Bag Packing Specification 2SA1768S-AN, 2SA1768T-AN No.3582-5/7 2SA1768 Outline Drawing 2SA1768S-AN, 2SA1768T-AN Mass (g) Unit 0.275 mm * For reference No.3582-6/7 2SA1768 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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