25V, -2A, Low VCE(sat) PNP Single PCP

Ordering number : EN1787C
2SB1121
Bipolar Transistor
http://onsemi.com
-25V, -2A, Low VCE(sat) PNP Single PCP
Applications
• Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
• Adoption of FBET, MBIT processes
• Low collector to emitter saturation voltage
• Large current capacity and wide SOA
• Fast switching speed
• Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector to Base Voltage
VCBO
-30
V
Collector to Emitter Voltage
VCEO
-25
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current
IC
-2
A
Collector Current (Pulse)
ICP
-5
A
Continued on next page.
2SB1121S-TD-E
2SB1121T-TD-E
Top View
4.5
1.6
1
2
Marking
BD
Packing Type: TD
4.0
1.0
2.5
1.5
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
LOT No.
Package Dimensions
unit : mm (typ)
7007B-004
TD
3
0.4
0.4
0.5
1.5
Electrical Connection
3.0
2
1
0.75
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
PCP
Semiconductor Components Industries, LLC, 2014
13114 TK/IM TC-00003091 /31010EA TK IM /O1003TN (KOTO)/92093HA (KT)/4107KI/3045MW,TS No. 1787-1/4
January, 2014
2SB1121
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
500
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2×0.8mm)
mW
1.3
W
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C
Ratings
Parameter
Symbol
Conditions
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=-20V, IE=0A
-0.1
μA
Emitter Cutoff Current
IEBO
VEB=-4V, IC=0A
-0.1
μA
hFE1
VCE=-2V, IC=-100mA
hFE2
VCE=-2V, IC=-1.5A
Gain-Bandwidth Product
fT
VCE=-10V, IC=-50mA
Output Capacitance
Cob
VCB=-10V, f=1MHz
Collector to Emitter Saturation Voltage
VCE(sat)
IC=-1.5A, IB=-75mA
-0.35
-0.6
V
Base to Emitter Saturation Voltage
VBE(sat)
IC=-1.5A, IB=-75mA
-0.85
-1.2
V
Collector to Base Breakdown Voltage
V(BR)CBO
IC=-10μA, IE=0A
-30
V
Collector to Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, RBE=∞
-25
V
Emitter to Base Breakdown Voltage
V(BR)EBO
IE=-10μA, IC=0A
-6
Turn-ON Time
ton
Storage Time
tstg
Fall Time
tf
DC Current Gain
140*
400*
65
See specified Test Circuit
150
MHz
32
pF
V
60
ns
350
ns
25
ns
*: The 2SB1121 is classified by 100mA hFE as follows:
Rank
S
T
hFE
140 to 280
200 to 400
Switching Time Test Circuit
Ordering Information
Device
2SB1121S-TD-E
2SB1121T-TD-E
Package
Shipping
Memo
PCP
1,000pcs./reel
Pb-Free
No. 1787-2/4
2SB1121
No. 1787-3/4
2SB1121
Outline Drawing
Land Pattern Example
2SB1121S-TD-E
2SB1121T-TD-E
Mass (g) Unit
0.058
mm
Unit: mm
* For reference
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
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PS No. 1787-4/4