Ordering number : ENA1039A 6HP04CH P-Channel Small Single MOSFET –60V, –370mA, 4.2Ω, Single CPH3 http://onsemi.com Features • • • 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Unit --60 V ±20 V --370 mA --1480 mA 0.6 W 150 °C --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta=25°C Parameter Drain to Source Breakdown Voltage Symbol Conditions Ratings min V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V --60 VGS(off) | yfs | VDS=--10V, ID=--100μA VDS=--10V, ID=--190mA --1.2 Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID=--190mA, VGS=--10V ID=--100mA, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance VDS=--20V, f=1MHz typ max Unit V --1 μA ±10 μA --2.6 310 V mS 3.1 4.2 Ω 5.1 7.3 Ω 24.1 pF 8.5 pF Reverse Transfer Capacitance Crss 4.1 pF Turn-ON Delay Time td(on) tr 18.4 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=--30V, VGS=--10V, ID=--370mA 15.2 ns 113 ns 41 ns 0.84 nC 0.19 nC 0.21 IS=--370mA, VGS=0V --0.92 nC --1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2014 May, 2014 50714 TKIM TC-00003062/20608PE TIIM TC-00001164 No.A1039-1/5 6HP04CH .0 V V --4.5 --4.0V --200 --100 Drain Current, ID -- mA --350 VGS= --3V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Drain to Source Voltage, VDS -- V --150 --100 --1.6 0 --190mA 10 8 6 4 ID= --100mA 2 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 Gate to Source Voltage, VGS -- V 2 10 7 5 3 4 2 --20 0 20 40 60 80 100 120 140 160 IT17339 IS -- VSD VGS=0V --100 7 5 3 2 --10 7 5 3 2 1 --1 2 --1 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT17340 Drain Current, ID -- mA 0 tr 3 2 --0.8 --1.0 --1.2 IT17341 f=1MHz 5 Ciss, Coss, Crss -- pF td(on) --0.6 7 3 tf --0.4 Ciss, Coss, Crss -- VDS 100 VDD= --30V VGS= --10V td(off) --0.2 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 7 5 1 --0.1 --40 2 2 10 7 5 90mA --1 , I D= --10V = VGS Ta=7 5°C 25°C --25°C C 25° 3 2 = -VGS 6 --1000 7 5 Source Current, IS -- mA 5°C --2 Ta= C 75° 100 7 5 3 --1 I = 4V, D 3 2 100 7 5 A 00m 8 Ambient Temperature, Ta -- °C 3 2 --5 IT17337 10 IT17338 VDS= --10V --4 12 0 --60 --20 | yfs | -- ID 1000 7 5 --3 RDS(on) -- Ta 14 Static Drain to Source On-State Resistance, RDS(on) -- Ω 12 --2 Gate to Source Voltage, VGS -- V Ta=25°C 0 --1 IT17336 RDS(on) -- VGS 14 Static Drain to Source On-State Resistance, RDS(on) -- Ω --200 0 0 Forward Transfer Admittance, |yfs | -- mS --250 --50 0 Switching Time, SW Time -- ns --300 25°C --6 --1 2 Drain Current, ID -- mA --300 VDS= --10V Ta=7 5°C 0. --1 ID -- VGS --400 .0V 0V --25 °C ID -- VDS --400 3 Ciss 2 Coss 10 7 Crss 5 3 2 2 3 5 7 --1 2 Drain Current, ID -- A 3 5 7 --10 IT17342 1 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT17343 No.A1039-2/5 6HP04CH VGS -- Qg --10 --10 7 5 3 2 VDS= --30V --8 Drain Current, ID -- A Gate to Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 IDP= --1480mA (PW≤10μs) ID= --370mA --0.1 7 5 3 2 --0.01 7 5 3 2 --2 --1 0 0 0.8 0.6 0.4 0.2 Total Gate Charge, Qg -- nC 1.0 IT17344 PD -- Ta 0.8 Allowable Power Dissipation, PD -- W --1.0 7 5 3 2 SOA --0.001 --0.01 2 3 100 μ 1m s 10 s m s 10 0 m DC s op era tio n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 5 7--0.1 2 3 5 7 --1 2 3 5 7 --10 Drain to Source Voltage, VDS -- V 2 3 5 7--100 IT17345 When mounted on ceramic substrate (900mm2✕0.8mm) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT17346 No.A1039-3/5 6HP04CH Package Dimensions 6HP04CH-TL-W CPH3 CASE 318BA ISSUE O Unit : mm 1: Gate 2: Source 3: Drain Land Pattern Example 2.4 1.4 0.6 Packing Type:TL Device Package Shipping memo 6HP04CH-TL-W CPH3, SC-59 SOT-23, TO-236 3,000 pcs. / reel Pb-Free and Halogen Free Electrical Connection Marking WW Ordering & Package Information 0.95 LOT No. 0.95 TL Switching Time Test Circuit VDD= --30V VIN 3 0V --10V ID= --190mA RL=154Ω VIN D 1 VOUT PW≤10μs D.C. ≤1% G Rg 2 P.G 6HP04CH 50Ω S Rg=5kΩ No.A1039-4/5 6HP04CH Note on usage : Since the 6HP04CH is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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