Power MOSFET, 250V, 6.5Ohm, 350mA, Single

CPH3461
Power MOSFET
250V, 6.5Ω, 350mA, Single N-Channel
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Features
 On-Resistance RDS(on)1=5Ω (typ)
 2.5V Drive
 Pb-Free, Halogen Free and RoHS Compliance
 ESD Diode - Protected Gate
 Low Ciss and High Speed Switching
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Symbol
Conditions
Value
VDSS
Unit
250
V
Gate to Source Voltage
VGSS
10
V
Drain to Gate Voltage
VDGS
250
V
Gate to Drain Voltage
VGDS
10
V
Drain Current (DC)
ID
350
mA
Drain Current (Pulse)
IDP
PW10s, duty cycle1%
1.4
A
Power Dissipation
PD
When mounted on ceramic substrate (900mm2  0.8mm)
1.0
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Junction to Ambient
When mounted on ceramic substrate (900mm20.8mm)
Value
RJA
125
Unit
C/W
Electrical Characteristics at Ta  25C
Value
Parameter
Symbol
Conditions
Unit
min
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=250V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
typ
max
250
V
A
10
A
1.3
V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
Forward Transconductance
gFS
VDS=10V, ID=170mA
1
RDS(on)1
ID=170mA, VGS=4.5V
5
6.5

RDS(on)2
ID=170mA, VGS=2.5V
5.1
7.2

Static Drain to Source On-State Resistance
0.4
1
S
Continued on next page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
February 2015 - Rev. 2
1
Publication Order Number :
CPH3461/D
CPH3461
Continued from preceding page.
Value
Parameter
Symbol
Conditions
Unit
min
typ
max
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
7.5
ns
Rise Time
tr
7.3
ns
Turn-OFF Delay Time
td(off)
23
ns
Fall Time
tf
43
ns
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Forward Diode Voltage
VSD
140
VDS=20V, f=1MHz
pF
8
pF
3
pF
See specified Test Circuit
VDS=125V, VGS=4.5V, ID=350mA
IS=350mA, VGS=0V
2.1
nC
0.3
nC
0.7
nC
0.79
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Packing Type : TL
Marking
Electrical Connection
Switching Time Test Circuit
1 : Gate
2 : Source
3 : Drain
ORDERING INFORMATION
Device
Package
Shipping
Note
CPH3461-TL-H
CPH3,SC-59
SOT-23,TO-236
3,000pcs. / Tape & Reel
Pb-Free and Halogen Free
CPH3461-TL-W
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2
CPH3461
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3
CPH3461
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4
CPH3461
Package Dimensions
CPH3461-TL-H, CPH3461-TL-W
CPH3
CASE 318BA
ISSUE O
unit : mm
1: Gate
2: Source
3: Drain
2.4
1.4
Recommended Soldering
Footprint
0.6
0.95
0.95
Note on usage : Since the CPH3461 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
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nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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