Ordering number : EN6645D 3LP01C P-Channel Small Signal MOSFET http://onsemi.com –30V, –0.1A, 10.4Ω, Single CP Features • • • Low ON-resistance High-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS VGSS Gate to Source Voltage Drain Current (DC) Unit --30 V ±10 V Allowable Power Dissipation ID IDP PD 0.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.1 A --0.4 A This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7013A-013 1.1 memo 3LP01C-TB-E CP SC-59,TO-236, SOT-23,TO-236AB 3,000 pcs./reel Pb-Free 3LP01C-TB-H CP SC-59,TO-236, SOT-23,TO-236AB 3,000 pcs./reel Pb-Free and Halogen Free 1.5 3LP01C-TB-E 3LP01C-TB-H Shipping 1 0.95 2 Packing Type: TL Marking 0.4 1 : Gate 2 : Source 3 : Drain CP TB XA LOT No. 0.05 0.1 3 Package LOT No. 0.3 0.5 2.5 0.5 2.9 Device Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 June, 2013 62613 TKIM TC-00002944/62712 TKIM/32509 MSIM TC-00001903/72606/ No.6645-1/6 33006PE MSIM TB-00002203/90100 TSIM TA-1982 3LP01C Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Conditions V(BR)DSS IDSS IGSS VGS=±8V, VDS=0V Forward Transfer Admittance VGS(off) | yfs | VDS=--10V, ID= --100μA VDS=--10V, ID= --50mA Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID= --50mA, VGS= --4V ID= --30mA, VGS= --2.5V ID= --1mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD ID= --1mA, VGS=0V VDS= --30V, VGS=0V VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --100mA Ratings min typ max --30 V --0.4 80 --1 μA ±10 μA --1.4 110 V mS 8 10.4 Ω 11 15.4 Ω 27 54 Ω 7.5 pF 5.7 pF 1.8 pF 24 ns 55 ns 120 ns 130 ns 1.43 nC 0.18 nC 0.25 IS= --100mA, VGS=0V Unit --0.83 nC --1.2 V Switching Time Test Circuit 0V --4V VDD= --15V VIN VIN PW=10μs D.C.≤1% D ID= --50mA RL=300Ω VOUT G 3LP01C P.G 50Ω S No.6645-2/6 3LP01C ID -- VDS --0.18 V .5 --0.16 --6.0 --0.07 --0.06 --0.05 --0.04 --0.03 VGS= --1.5V --0.02 --0.10 --0.08 --0.06 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain to Source Voltage, VDS -- V --1.8 --2.0 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω 20 15 --50mA ID= --30mA 5 --2 --3 --4 --5 --6 --7 --8 Gate to Source Voltage, VGS -- V --9 --10 Static Drain to Source On-State Resistance, RDS(on) -- Ω 25°C Ta=75°C 10 --25°C 7 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A 30m 2 = -V GS 10 A A 50m = -V, I D 4.0 = -V GS 8 6 4 2 --60 --40 --20 0 20 40 60 80 --25°C 5 3 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 5 7 160 IT00083 2 --0.1 3 IT00080 RDS(on) -- ID VGS= --1.5V 5 3 2 100 7 5 25°C Ta=75°C 3 2 --25°C 2 3 5 7 2 --1.0 Drain Current, ID -- mA Forward Transfer Admittance, | yfs | -- S 12 = -, ID .5V 7 3 IT00082 | yfs | -- ID 1.0 16 14 25°C Ta=75°C 10 IT00081 RDS(on) -- Ta 18 2 10 --0.1 3 --4.0 IT00078 3 7 3 --3.5 VGS= --4V 1000 5 2 --3.0 Drain Current, ID -- A VGS= --2.5V 7 --2.5 RDS(on) -- ID IT00079 RDS(on) -- ID 100 --2.0 5 1.0 --0.01 0 --1 --1.5 7 25 0 --1.0 100 Ta=25°C 10 --0.5 Gate to Source Voltage, VGS -- V IT00077 RDS(on) -- VGS 30 Static Drain to Source On-State Resistance, RDS(on) -- Ω --0.12 --0.02 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω --0.14 --0.04 --0.01 Static Drain to Source On-State Resistance, RDS(on) -- Ω 25°C --25 °C V --2.0V Ta= --2 VDS= --10V 75° C --4 . --0.08 Drain Current, ID -- A --3 .0V 0V --3.5V --0.09 ID -- VGS --0.20 Drain Current, ID -- A --0.10 VDS= --10V 7 5 3 25°C 2 0.1 5°C 2 Ta= -- 75°C 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00084 No.6645-3/6 3LP01C IS -- VSD 3 Switching Time, SW Time -- ns 7 5 --0.01 --0.5 --0.6 --0.7 --25°C 25°C 3 Ta=7 5°C --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V td(off) 100 7 5 tr 3 td(on) 2 3 2 10 Ciss Coss 5 3 2 Crss 3 5 7 Drain Current, ID -- A --0.1 IT00086 VGS -- Qg VDS= --10V ID= --0.1A --9 7 2 --10 5 Ciss, Coss, Crss -- pF tf 2 f=1MHz 7 --8 --7 --6 --5 --4 --3 --2 --1 1.0 0 0 --10 --5 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT00087 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00088 PD -- Ta 0.30 Allowable Power Dissipation, PD -- W 3 IT00085 Ciss, Coss, Crss -- VDS 100 5 10 --0.01 --1.1 Gate to Sourse Voltage, VGS -- V Source Current, IS -- A --0.1 VDD= --15V VGS= --4V 7 2 2 SW Time -- ID 1000 VGS=0V 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02382 No.6645-4/6 3LP01C Outline Drawing 3LP01C-TB-E, 3LP01C-TB-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.6645-5/6 3LP01C Note on usage : Since the 3LP01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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