Ordering number : ENA1011A ECH8655R N-Channel Power MOSFET http://onsemi.com 24V, 9A, 17mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation 24 V ±12 V 9 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-003 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8655R-TL-H Top View 0.25 2.9 Packing Type : TL 8 TA 5 Lot No. TL 2.3 2.8 0 to 0.02 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 0.9 0.25 Marking 0.15 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 51612 TKIM/40908PE TIIM TC-00001311 No. A1011-1/7 ECH8655R Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V 24 V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=4.5A 4.8 RDS(on)1 ID=4.5A, VGS=4.5V 9 13 17 mΩ RDS(on)2 ID=4.5A, VGS=4.0V 9 13.5 18 mΩ RDS(on)3 ID=4.5A, VGS=3.1V 9.2 15 21 mΩ RDS(on)4 ID=2A, VGS=2.5V 10.5 18 25.5 mΩ 1 μA ±10 μA 1.3 8 V S Turn-ON Delay Time td(on) 320 ns Rise Time 1100 ns Turn-OFF Delay Time tr td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=10V, ID=9A IS=9A, VGS=0V 2400 ns 2100 ns 16.8 nC 1.6 nC 4.8 nC 0.8 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=4.5A RL=2.22Ω VOUT VIN D PW=10μs D.C.≤1% Rg G P.G 50Ω S ECH8655R Rg=1kΩ Ordering Information Device ECH8655R-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1011-2/7 ECH8655R ID -- VDS 2 .5 5 4 3 2 3 0.2 0.3 0.4 0.5 Drain-to-Source Voltage, VDS -- V 0 RDS(on) -- VGS 40 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 30 25 ID=2.0A 4.5A 15 10 5 0 0 2 4 6 8 Source Current, IS -- A C 5° °C 75 Ta °C 25 3 2 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 IT13159 5 VDD=10V VGS=4V 3 tf 1000 tr 7 5 td(on) 3 2 100 0.1 .5A I =4 4.0V, D = S VG 10 5 0 50 100 150 200 IT13158 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT13160 VGS -- Qg 10 td (off) 2 15 Diode Forward Voltage, VSD -- V SW Time -- ID 7 20 0.001 0.1 Gate-to-Source Voltage, VGS -- V 1.0 0.1 2A I D= 5V, . 4.5A 2 = I = V GS 3.1V, D A = =4.5 VGS , ID V 5 . =4 VGS 10 7 5 3 2 7 -2 =- 25 Ambient Temperature, Ta -- °C VDS=10V 5 2.0 IT13156 30 IT13157 | yfs | -- ID 10 1.5 RDS(on) -- Ta 0 --50 10 Gate-to-Source Voltage, VGS -- V 1.0 35 Ta=25°C 35 20 0.5 Gate-to-Source Voltage, VGS -- V IT13155 5°C 25° C --25 °C 0.1 0 Ta= 7 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4 1 VGS=1.0V 0 Forward Transfer Admittance, | yfs | -- S 5 2 1 Switching Time, SW Time -- ns 6 25° C --25°C 1.5V Ta= 75° C 6 7 Drain Current, ID -- A Drain Current, ID -- A 7 VDS=10V 8 4.5V 4.0V 8 ID -- VGS 9 V 3.1V 9 VDS=10V ID=9A 8 6 4 2 0 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13236 0 2 4 6 8 10 12 14 Total Gate Charge, Qg -- nC 16 18 20 IT13237 No. A1011-3/7 ECH8655R ASO 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IDP=60A PW≤10μs 10 0μ s 1m ID=9A 10 ms 0m s s 10 DC Operation in this area is limited by RDS(on). PD -- Ta 1.8 Allowable Power Dissipation, PD -- W Drain Current, ID -- A 2 op era tio 0.1 7 Ta=25°C 5 Single pulse 3 When mounted on ceramic substrate 2 (900mm2✕0.8mm) 1unit 0.01 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 n When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 ss 1u 0.8 Di ni t ip ati on 0.6 0.4 0.2 0 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13391 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13154 No. A1011-4/7 ECH8655R Embossed Taping Specification ECH8655R-TL-H No. A1011-5/7 ECH8655R Outline Drawing ECH8655R-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1011-6/7 ECH8655R Note on usage : Since the ECH8655R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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