Ordering number : ENA1551A ATP204 N-Channel Power MOSFET http://onsemi.com 30V, 100A, 5.6mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 30 PW≤10μs, duty cycle≤1% V 100 A 300 A 60 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 235 mJ 50 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=15V, L=100μH, IAV=50A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP204-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP204 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/91609PA TKIM TC-00002081 No. A1551-1/7 ATP204 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Conditions Ratings min typ Unit max 30 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V VDS=10V, ID=50A ID=50A, VGS=10V 100 4.3 5.6 mΩ ID=25A, VGS=4.5V 6.5 9.1 mΩ VDS=10V, f=1MHz S 4600 pF 700 pF Reverse Transfer Capacitance Crss 390 pF Turn-ON Delay Time td(on) 40 ns Rise Time tr 690 ns Turn-OFF Delay Time td(off) 205 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=15V, VGS=10V, ID=100A 110 ns 70 nC 22 nC 9.2 IS=100A, VGS=0V 1.03 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=15V VIN ID=50A RL=0.3Ω VIN D PW=10μs D.C.≤1% VOUT G ATP204 P.G 50Ω S Ordering Information Device ATP204-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1551-2/7 ATP204 6 .0 120 4.0V 50 40 30 VGS=3.5V 20 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 50 40 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tc=25°C Single pulse 12 ID=25A 10 50A 8 6 4 2 4 6 8 10 12 14 Gate-to-Source Voltage, VGS -- V 25 3 C 5° --2 = °C Tc 75 2 10 7 5 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 25 °C 4 2 --40 --20 0 20 40 60 80 100 120 Ciss, Coss, Crss -- pF 2 tf 100 7 5 tr 3 td(on) IS -- VSD 0 0.2 0.4 0.6 0.8 1.0 1.2 2 3 1.4 IT15003 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 1000 7 Coss 5 Crss 3 2 2 5 7 1.0 160 VGS=0V Single pulse 5 td(off) 140 IT15001 7 7 5 3 A =50 V, I D 0 . 0 =1 VGS 6 10000 1000 2 =4.5 VGS Diode Forward Voltage, VSD -- V VDD=15V VGS=10V 10 0.1 A =25 V, I D 8 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 5 7 100 IT15002 SW Time -- ID 3 10 Case Temperature, Tc -- °C 2 1.0 7 5 0.1 6 IT14999 12 0 --60 16 °C 5 Single pulse Source Current, IS -- A 100 7 5 4 RDS(on) -- Tc 14 VDS=10V 2 3 2 Gate-to-Source Voltage, VGS -- V IT15000 | yfs | -- ID 3 1 0 IT14998 5°C 25°C --25° C 0.6 RDS(on) -- VGS 0 Forward Transfer Admittance, | yfs | -- S 70 Tc= 7 0.4 2 Switching Time, SW Time -- ns 80 10 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.2 0 14 2 90 20 Drain-to-Source Voltage, VDS -- V 3 100 30 10 0 110 Tc= 75°C --25° C 60 140 Drain Current, ID -- A 70 VDS=10V 130 16.0V 10.0V Drain Current, ID -- A 80 V 4.5 V 8.0V 90 ID -- VGS 150 Tc=25°C Tc=-25° C 75°C 25° C ID -- VDS 100 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT15004 100 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT15005 No. A1551-3/7 ATP204 VGS -- Qg 10 7 6 5 4 2 1 0 0 10 20 30 40 50 Total Gate Charge, Qg -- nC PD -- Tc 70 40 30 20 10 0 40 60 80 100 Tc=25°C Single pulse 2 3 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT14983 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT14982 EAS -- Ta 120 50 20 1.0 7 5 3 2 IT15006 60 0 Operation in this area is limited by RDS(on). 10 7 5 3 2 0.1 0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 70 60 ID=100A 100 7 5 3 2 on 3 PW≤10μs 10μ s 10 0μ s 1m s 10 10 ms 0m s ati er op Drain Current, ID -- A 8 IDP=300A DC Gate-to-Source Voltage, VGS -- V 9 ASO 7 5 3 2 VDS=15V ID=100A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT14011 No. A1551-4/7 ATP204 Taping Specification ATP204-TL-H No. A1551-5/7 ATP204 Outline Drawing ATP204-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1551-6/7 ATP204 Note on usage : Since the ATP204 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1551-7/7