Ordering number : ENA1285B TF202THC N-Channel JFET http://onsemi.com 20V, 140 to 350μA, 1.0mS, VTFP Features • • • • • • Ultrasmall package facilitates miniaturization in end products Especially suited for use in electret condenser microphone for audio equipments and telephones Excellent voltage characteristics Excellent transient characteristics Adoption of FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate to Drain Voltage Conditions Ratings Unit VGDO IG Gate Current Allowable Power Dissipation Drain Current ID PD Junction Temperature Tj Storage Temperature Tstg --20 V 10 mA 1 mA 100 mW 150 °C --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7031A-001 • Package : VTFP • JEITA, JEDEC : SC-106A • Minimum Packing Quantity : 8,000 pcs./reel 1.4 0.1 TF202THC-4-TL-H TF202THC-5-TL-H Packing Type: TL Marking 2 RANK LOT No. 0.8 1 E LOT No. 3 0 to 0.02 0.2 1.2 0.2 0.25 TL 0.2 0.45 0.34 Electrical Connection 0.07 0.07 1 1 2 3 1 : Drain 2 : Source 3 : Gate 3 VTFP 2 Semiconductor Components Industries, LLC, 2014 July, 2014 71014 TKIM/82008GB TKIM TC-00001480 No. A1285-1/6 TF202THC Electrical Characteristics at Ta=25°C Parameter Symbol Gate to Drain Breakdown Voltage Conditions Ratings min typ Cutoff Voltage V(BR)GDO VGS(off) IG=--100μA VDS=5V, ID=1μA --0.2 Drain Current IDSS VDS=5V, VGS=0V 140* max --20 Forward Transfer Admittance | yfs | VDS=5V, VGS=0V, f=1kHz Input Capacitance Ciss Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz VDS=5V, VGS=0V, f=1MHz 0.5 Unit V --0.6 --1.0 V 350* μA 1.0 mS 3.5 pF 0.65 pF [Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.] Voltage Gain GV VIN=10mV, f=1kHz --3.0 Reduced Voltage Characteristic ΔGVV VIN=10mV, f=1kHz, VCC=4.5V → 1.5V --1.2 Frequency Characteristic ΔGvf f=1kHz to 110Hz Input Impedance ZIN f=1kHz Output Impedance ZO f=1kHz Total Harmonic Distortion THD Output Noise Voltage VNO VIN=30mV, f=1kHz VIN=0V, A Curve dB --3.5 dB --1.0 dB 25 MΩ 1000 Ω 1.2 % --110 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * : The TF202THC is classified by IDSS as follows : (unit : μA) Rank IDSS 4 140 to 240 5 210 to 350 Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 1kΩ VCC=4.5V VCC=1.5V 15pF 33μF + VTVM V THD B A OSC Output Impedance Ordering Information Package Shipping TF202THC-4-TL-H Device VTFP 8,000pcs./reel TF202THC-5-TL-H VTFP 8,000pcs./reel memo Pb Free and Halogen Free No. A1285-2/6 TF202THC ID -- VDS 450 400 400 Drain Current, ID -- μA 450 VGS=0V 250 --0.1V 150 --0.2V --0.3V --0.4V 0 0 1 2 3 4 5 6 --0.5V 7 8 9 50 --0.3V --0.4V 360 400 320 350 300 A 0μ 200 ID 150 A 0μ 25 A 0μ 4 280 240 200 160 120 40 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 Gate to Source Voltage, VGS -- V | yfs | -- IDSS 1.3 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 Gate to Source Voltage, VGS -- V IT02312 1.0 0.9 0.8 0.7 0.6 --0 IT02313 VDS=5V ID=1μA -0.65 1.1 --0.1 VGS(off) -- IDSS -0.70 Cutoff Voltage, VGS(off) -- V 1.2 0 --1.0 0 VDS=5V VGS=0V f=1kHz 5 IT03015 VDS=5V 80 15 0 --0.7 --0.5V 3 ID -- VGS 400 450 5 =3 SS 2 Drain to Source Voltage, VDS -- V IT02310 VDS=5V 250 1 °C Drain Current, ID -- μA --0.2V 0 50 Forward Transfer Admittance, | yfs | -- mS 100 10 ID -- VGS 100 -0.60 -0.55 -0.50 -0.45 -0.40 -0.35 0.5 -0.30 0 100 200 300 Drain Current, IDSS -- μA 400 500 IT02314 0 Ciss -- VDS 100 200 VGS=0V f=1MHz 10 7 5 3 2 1.0 300 Drain Current, IDSS -- μA 400 500 IT02315 Crss -- VDS 5 Reverse Transfer Capacitance, Crss -- pF 2 Input Capacitance, Ciss -- pF --0.1V 150 0 Drain to Source Voltage, VDS -- V 500 200 25 50 VGS=0V 250 --2 100 300 Ta =7 5° C 200 350 5° C 350 300 ID -- VDS 500 Drain Current, ID -- μA Drain Current, ID -- μA 500 VGS=0V f=1MHz 3 2 1.0 7 5 3 2 0.1 7 1.0 2 3 5 7 10 Drain to Source Voltage, VDS -- V 2 3 IT03814 7 1.0 2 3 5 7 10 Drain to Source Voltage, VDS -- V 2 3 IT03815 No. A1285-3/6 TF202THC GV : VCC=4.5V VIN=10mV f=1kHz RL=1.0kΩ Cin=15pF IDSS : VDS=5.0V --1 --2 --3 --4 --5 --6 --7 0 100 300 Drain Current, IDSS -- μA 400 THD : VCC=4.5V VIN=30mV f=1kHz RL=1.0kΩ Cin=15pF IDSS : VDS=5.0V 2.0 1.5 1.0 0.5 --0.9 --1.1 ΔGVV : VCC=4.5V→1.5V VIN=10mV f=1kHz RL=1.0kΩ Cin=15pF IDSS : VDS=5.0V --1.3 --1.5 --1.7 100 200 300 Drain Current, IDSS -- μA 400 500 IT13911 THD -- VIN 100 THD : VCC=4.5V f=1kHz IDSS : VDS=5.0V 250μA 10 150μA I DSS= 350μA 1.0 0.1 0 100 200 300 Drain Current, IDSS -- μA 400 0 500 IT13912 31 30 29 28 100 150 ZO : VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 950 27 200 IT02316 ZO -- IDSS 960 Output Impedance, ZO -- Ω ZIN :VCC=4.5V VIN=10mV f=1kHz IDSS : VDS=5.0V 50 Input Voltage, VIN -- mV ZIN -- IDSS 32 Input Impedance, ZIN -- MΩ --0.7 0 0 940 930 920 910 900 26 0 100 200 300 Drain Current, IDSS -- μA 400 500 IT02323 0 VNO -- IDSS VNO : VCC=4.5V VIN=0V, ACurve RL=1.0kΩ Cin=15pF IDSS : VDS=5.0V --112 --113 --114 100 200 --115 --116 --117 --118 --119 --120 300 Drain Current, IDSS -- μA 400 500 IT02324 PD -- Ta 120 Allowable Power Dissipation, PD -- mW --111 Output Noise Voltage, VNO -- dB ΔGVV -- IDSS --0.5 500 IT13910 THD -- IDSS 2.5 Total Harmonic Distortion, THD -- % 200 Total Harmonic Distortion, THD -- % Voltage Gain, GV -- dB Reduced Voltage Characteristic, ΔGVV -- dB GV -- IDSS 0 100 80 60 40 20 0 0 100 200 300 Drain Current, IDSS -- μA 400 500 IT13913 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02317 No. A1285-4/6 TF202THC Outline Drawing TF202THC-4-TL-H, TF202THC-5-TL-H Land Pattern Example Mass (g) Unit 0.0012 mm * For reference Unit: mm 1.1 0.4 0.5 0.45 0.45 0.45 0.45 No. A1285-5/6 TF202THC ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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