100V, -170mA, 18Ohm, Single CPH3

Ordering number : EN*A0926A
1HP04CH
Advance Information
http://onsemi.com
P-Channel Small Signal MOSFET
100V, 170mA, 18, Single CPH3
Features
 4V drive
 Protection diode in
 Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Value
Unit
Drain to Source Voltage
VDSS
100
Gate to Source Voltage
VGSS
20
V
Drain Current (DC)
ID
170
mA
680
mA
Drain Current (Pulse)
IDP
PW10s, duty cycle1%
Power Dissipation
PD
When mounted on ceramic substrate (900mm20.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
V
0.6
W
150
C
55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Junction to Ambient
When mounted on ceramic substrate (900mm20.8mm)
RJA
Value
208
Unit
C /W
Electrical Characteristics at Ta  25C
Value
Parameter
Symbol
Conditions
Unit
min
typ
max
100
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±16V, VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=100A
Forward Transconductance
gFS
VDS=10V, ID=80mA
170
RDS(on)1
ID=80mA, VGS=10V
12.5
18
RDS(on)2
ID=40mA, VGS=4V
14
21
Static Drain to Source On-State Resistance
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
V
1.2
A
10
A
2.6
14
VDS=20V, f=1MHz
1
V
mS


pF
2.8
pF
0.9
pF
Continued on next page.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
42814TKIM/82907TIIM TC-00000808 PE No.A0926-1/5
1HP04CH
Continued from preceding page.
Value
Parameter
Symbol
Conditions
Unit
min
typ
max
Turn-ON Delay Time
td(on)
21
ns
Rise Time
tr
18
ns
Turn-OFF Delay Time
td(off)
200
ns
Fall Time
tf
81
ns
Total Gate Charge
Qg
0.9
nC
Gate to Source Charge
Qgs
0.14
nC
Gate to Drain “Miller” Charge
Qgd
0.27
nC
Forward Diode Voltage
VSD
See specified Test Circuit
VDS=50V, VGS=10V, ID=170mA
0.88
IS=170mA, VGS=0V
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Ordering & Package Information
Packing Type:TL
Device
Package
Shipping
note
1HP04CH-TL-W
CPH3, SC-59
SOT-23, TO-236
3,000
pcs. / reel
Pb-Free
and
Halogen Free
Electrical Connection
Marking
Switching Time Test Circuit
No.A0926-2/5
1HP04CH
No.A0926-3/5
1HP04CH
No.A0926-4/5
1HP04CH
Package Dimensions
1HP04CH-TL-W
CPH3
CASE 318BA
ISSUE O
unit : mm
1: Gate
2: Source
3: Drain
2.4
1.4
Recommended Soldering
Footprint
0.6
0.95
0.95
Note on usage : Since the 1HP04CH is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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PS No.A0926-5/5