Ordering number : ENA1821A EMH2801 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 85mΩ, Single EMH8 with Schottky Diode Features • • • • Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting • 1.8V drive [MOSFET] • Low ON-resistance • • Low forward voltage (IF=2.0A, VF max=0.46V) [SBD] Small switching noise Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --20 V ±10 V Allowable Power Dissipation ID IDP PD 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --3 A --20 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit Continued on next page. This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions Product & Package Information unit : mm (typ) 7045-007 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH2801-TL-H 5 Packing Type : TL Marking QA 2.1 1.7 8 Lot No. TL 1 0.2 4 0.5 0.05 0.75 2.0 Electrical Connection 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode EMH8 Semiconductor Components Industries, LLC, 2013 July, 2013 8 7 6 5 1 2 3 4 62712 TKIM/81110PE TKIM TC-00002458 No. A1821-1/8 EMH2801 Continued from preceding page. Parameter Symbol Conditions Ratings Unit [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current VRRM VRSM 15 V 15 V Rectangular wave 2.0 A 50Hz sine wave, 1 cycle 20 A Surge Forward Current IO IFSM Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --20 V --0.4 --1 μA ±10 μA --1.3 3.6 V S 65 85 mΩ 98 137 mΩ 155 235 mΩ 320 pF 66 pF Crss 50 pF Turn-ON Delay Time td(on) 7.1 ns Rise Time tr td(off) 21 ns 37 ns Turn-OFF Delay Time Fall Time Total Gate Charge VDS=--10V, f=1MHz See specified Test Circuit. tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=--3A, VGS=0V VR VF1 IR=1mA VF2 VDS=--10V, VGS=--4.5V, ID=--3A 32 ns 4.0 nC 0.6 nC 1.1 nC --0.83 --1.2 V IF=1.0A 0.33 0.39 V IF=2.0A VR=7.5V 0.39 0.46 V 300 μA [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance IR C VR=10V, f=1MHz 15 V 35 pF No. A1821-2/8 EMH2801 Switching Time Test Circuit (MOSFET) VDD= --10V D PW=10μs D.C.≤1% 50Ω VOUT 100Ω 10Ω 10mA ID= --1.5A RL=6.67Ω VIN 100mA Duty≤10% 100mA VIN 0V --4.5V trr Test Circuit (SBD) 10μs --5V G trr EMH2801 P.G 50Ω S Ordering Information Device Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free EMH2801-TL-H ID -- VDS --5.0 .8V --3.5 V --2.5 V --4.5 --1 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 210 180 ID= --0.5A --1A 120 --3A 90 60 30 0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V --7 --8 IT14535 C C --25 ° °C 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --2.2 240 Ta=25°C 150 --1.5 0 --1.0 Drain-to-Source Voltage, VDS -- V IT14533 RDS(on) -- VGS [MOSFET] 240 --2.0 --0.5 VGS= --1.2V --0.2 --2.5 --1.0 --0.5 --0.1 --3.0 75° --1.5V --3.5 Ta= Drain Current, ID -- A --4. 5 --1.0 0 [MOSFET] --4.0 --1.5 0 ID -- VGS VDS= --10V 25 --8V --2.0 [MOSFET] V --2.5 --10V Drain Current, ID -- A --3.0 IT14534 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta [MOSFET] 220 200 .5A 180 160 = VGS 140 = --0 V, I D --1.8 .0A 120 = VGS 100 --1 , I D= --2.5V 3.0A -V, I D= 80 --4.5 V GS= 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT14536 No. A1821-3/8 EMH2801 | yfs | -- ID [MOSFET] 7 75 1.0 °C °C 25 7 5 3 --1.0 7 5 3 2 --0.1 7 5 25° C --2 5°C = Ta 5°C --2 Ta= 75° C 2 --0.5 --0.6 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 --0.3 7 --0.4 [MOSFET] VDD= --10V VGS= --4.5V 3 7 Ciss, Coss, Crss -- pF td(off) 5 3 tf 2 tr 10 td(on) 7 --0.9 --1.0 --1.1 f=1MHz Ciss 3 7 --0.8 5 2 100 --0.7 Diode Forward Voltage, VSD -- V IT14538 Ciss, Coss, Crss -- VDS [MOSFET] IT14537 SW Time -- ID 5 Switching Time, SW Time -- ns VGS=0V 2 3 Drain Current, ID -- A 2 100 Coss Crss 7 5 5 3 3 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 3 2 5 7 --10 [MOSFET] 3 2 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --10 7 5 3 2 --0.5 3 2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC PD -- Ta 1.2 4.0 4.5 IT14541 --6 --8 --10 --12 --14 --16 --18 --20 Drain-to-Source Voltage, VDS -- V IT14540 [MOSFET] ASO IDP= --20A (PW≤10μs) ID= --3A 10 0μ 1m s s 10 DC ms op 10 0m s era tio n( Ta = 3 2 --0.1 7 5 0 --4 --1.0 7 5 --1.0 0 --2 5 VDS= --10V ID= --3A --4.0 0 IT14539 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V [MOSFET] 3 5 0.1 --0.01 Allowable Power Dissipation, PD -- W IS -- VSD 7 5 VDS= --10V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 10 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT15908 Drain-to-Source Voltage, VDS -- V [MOSFET] When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15909 No. A1821-4/8 EMH2801 IF -- VF [SBD] 1.0E+04 0°C --25 °C C 25° C C 75 ° 0.01 7 5 50° 3 2 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 Forward Voltage, VF -- V Rectangular wave 0.45 25°C 1.0E+01 0°C 1.0E+00 --25°C 1.0E-01 0.50 [SBD] (3) (2) (4) (1) 50°C 0 θ 360° 0.6 180° 6 Rectangular wave V 12 14 [SBD] (1) (2) R (3) 360° 180° VR (4) 0.0004 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.2 0 0 0.5 1.0 1.5 C -- VR 5 0.0002 2.0 Average Output Current, IO -- A 2.5 100 7 5 3 2 5 7 1.0 2 3 5 Reverse Voltage, VR -- V 7 10 2 2 3 IT13213 4 6 8 10 12 IFSM -- t 24 Surge Forward Current, IFSM(Peak) -- A 2 3 0 Average Reverse Voltage, VR -- V [SBD] f=1MHz 2 0 IT12194 3 10 0.1 16 IT12193 360° θ Sine wave 0.0006 0.4 10 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.0008 360° 8 PR(AV) -- VR 0.0014 0.0010 Sine wave 4 Reverse Voltage, VR -- V 0.0012 1.0 0.8 2 IT12192 PF(AV) -- IO 1.2 75°C 1.0E+02 Average Reverse Power Dissipation, PR(AV) -- W 0 100°C Reverse Current, IR -- μA 25° C 0.1 7 5 0.001 Average Forward Power Dissipation, PF(AV) -- W [SBD] 1.0E+03 10 0° C 3 2 3 2 Interterminal Capacitance, C -- pF IR -- VR 1.0E+05 Ta=125°C 1.0 7 5 Ta= 1 Forward Current, IF -- A 3 2 14 16 IT12195 [SBD] Current waveform 50Hz sine wave 20 IS 20ms t 16 12 8 4 0 0.01 2 3 5 7 0.1 2 3 Time, t -- s 5 7 1.0 2 3 IT13214 No. A1821-5/8 EMH2801 Embossed Taping Specification EMH2801-TL-H No. A1821-6/8 EMH2801 Outline Drawing EMH2801-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1821-7/8 EMH2801 Note on usage : Since the EMH2801 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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