Ordering number : EN3026B 2SA1706 Bipolar Transistor –50V, –2A, Low VCE(sat), PNP Single NMP http://onsemi.com Applicaitons • Voltage regulators, relay drivers, lamp drivers Features • • • Adoption of FBET, MBIT processes Large current capacity and wide ASO Fast switching speed Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit --60 V --50 V VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg --6 V --2 A --4 A 1 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7540-001 • Package : NMP(Taping) • JEITA, JEDEC : SC-71 • Minimum Packing Quantity : 2,500 pcs./box 2.5 6.9 1.05 2SA1706S-AN 2SA1706T-AN 1.0 4.5 1.0 1.45 Marking(NMP(Taping)) Electrical Connection 2 A1706 RANK LOT No. 3 0.6 1.0 0.5 1 15.0 0.9 1 2.54 2 3 0.45 2.54 1 : Emitter 2 : Collector 3 : Base NMP(Taping) Semiconductor Components Industries, LLC, 2013 September, 2013 O1712 TKIM TC-00002826/93003TN (KT)/83098HA(KT)/5249MO, TS No.3026-1/6 2SA1706 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Output Capacitance Collector-to-Base Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ Unit max ICBO IEBO VCB=--50V, IE=0A VEB=--4V, IC=0A hFE1 VCE=--2V, IC=--100mA hFE2 VCE=--2V, IC=--1.5A fT VCE(sat) VCE=--10V, IC=--50mA 150 IC=--1A, IB=--50mA --0.3 --0.7 VBE(sat) Cob IC=--1A, IB=--50mA --0.9 --1.2 VCB=--10V, f=1MHz IC=--10μA, IE=0A 22 --60 V IC=--1mA, RBE=∞ --50 V V(BR)EBO ton IE=--10μA, IC=0A --6 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Ratings Conditions 140* --100 nA --100 nA 400* 40 MHz V V pF V 60 ns 450 ns 30 ns * : The 2SA1706 is classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit IB1 RB INPUT PW=20μs D.C.≤1% 50Ω OUTPUT IB2 VR + + 100μF 470μF RL VCC= --25V VBE=5V IC=10IB1= --10IB2= --500mA Ordering Information Package Shipping 2SA1706S-AN Device NMP(Taping) 2,500pcs./box 2SA1706T-AN NMP(Taping) 2,500pcs./box IC -- VCE --2.4 Collector Current, IC -- A A --10mA --1.2 --8mA --6mA --0.8 --4mA --2mA --0.4 --0.8 --7mA --6mA --1.2 --1.6 --2.0 Collector-to-Emitter Voltage, VCE -- V --5mA --0.8 --4mA --3mA --0.6 --2mA --0.4 --1mA --0.2 IB=0mA --0.4 IC -- VCE --1.0 m --20 --1.6 0 0 Pb Free --1.2 A 0m --5 Collector Current, IC -- A --2.0 memo --2.4 ITR04286 0 0 IB=0mA --2 --4 --6 --8 --10 Collector-to-Emitter Voltage, VCE -- V --12 ITR04288 No.3026-2/6 2SA1706 IC -- VBE --2.4 hFE -- IC 1000 VCE= --2V VCE= --2V 7 DC Current Gain, hFE 5 --1.6 25°C 5°C --1.2 Ta= 7 --0.8 --0.4 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 100 7 --1.2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A ITR04290 f T -- IC 1000 5 3 2 100 7 5 3 3 Cob -- VCB 2 7 2 ITR04292 f=1MHz VBE= --10V Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz --25°C 2 0 100 7 5 103 2 10 2 7 10 --10 2 3 5 7 --100 2 3 5 7 --1000 Collector Current, IC -- mA 2 5 --1.0 3 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V ITR04294 VCE(sat) -- IC --1000 7 --100 ITR04296 VBE(sat) -- IC --10 IC / IB=20 7 IC / IB=20 7 5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 25°C 2 3 0 3 2 --100 7 5 Ta 3 2 °C =75 C 25° C --25° 5 3 2 --1.0 Ta= --25°C 7 25°C 75°C 5 3 --10 5 7--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 3 2 2 ICP= --4.0A 10 IC= --2.0A 10 DC 0m 1m ms s n --0.1 7 5 3 --0.01 3 Ta=25°C Single pulse 5 7 --1.0 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 ITR04300 PC -- Ta s tio 2 2 1.2 op era 3 7 --0.01 ITR04298 ASO --1.0 7 5 2 5 3 Collector Dissipation, PC -- W 7 5 Collector Current, IC -- A Ta=75°C 3 5 --25° C Collector Current, IC -- A --2.0 1.0 0.8 0.6 0.4 0.2 0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 --7 ITR04302 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR04303 No.3026-3/6 2SA1706 Bag Packing Specification 2SA1706S-AN, 2SA1706T-AN No.3026-4/6 2SA1706 Outline Drawing 2SA1706S-AN, 2SA1706T-AN Mass (g) Unit 0.275 mm * For reference No.3026-5/6 2SA1706 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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